BAS16WS small signal diode prv : 100 volts io : 250 ma features : * silicon epitaxial planar diode * fast switching diodes. * pb / rohs free mechanical data : * case : sod-323 plastic case * weight : approx. 0.004 g maximum ratings and electrical characteristics rating at 25 c ambient temperature unless otherwise specified . parameter symbol value unit reverse voltage v r 75 v peak reverse voltage v rm 100 v rectified current (continuous) i f(av) 250 ma surge forward current at t = 1 s and tj = 25 c i fsm 500 ma power dissipation at t amb = 25 c p tot 200 1) mw junction temperature tj 150 c storage temperature range t s -65 to + 150 c electrical characteristics (rating at tj = 25 c unless otherwise specified) parameter symbol min. typ. max. unit forward voltage at i f = 50 ma v f --1v leakage current at v r =25 v, tj=150 c i r - - 30 na at v r = 75 v i r --1 a at v r =75 v, tj=150 c i r --50 a capacitance at v f = v r = 0 v c tot --4pf reverse recovery time from i f = 10 ma to i r = 10 ma, i r = 6 v, r l = 100 thermal resistance junction to ambient air r thja -- 650 1) c/w note : 1) valid provided that electrodes are kept at ambient temperature page 1 of 2 rev. 04 : december 21, 2005 ns trr - - 6 1.10 0.80 0.40 1.35 1.15 2.80 2. 30 0.25 1.80 1.60 0.15 (max) dimensions in millimeters sod-323
forward charecteristics dynamic forward resistance versus forward current admissible power dissipation relative capacitanc e versus ambient tempertur e versus reverse voltag e for conditions, see footnote in table "absolute maximum ratings" page 2 of 2 rev. 04 : december 21, 2005 ratings and characteristic curves ( BAS16WS) 10 -2 10 -1 1 10 10 2 10 3 0 1 2 v t j = 100 c t j = 25 c ma v f i f 10 4 10 3 10 2 10 1 2 5 2 5 2 5 2 5 10 -2 10 -1 1 10 10 2 ma v t j = 25 c f = 1 khz r f i f 500 400 300 200 100 0 0 100 200 c t amb p tot mw 1.1 1.0 0.9 0.8 0.7 0 2 4 6 8 10 v v r c tot (v r ) c tot (0 v) t j = 25 c f = 1 khz
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