absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 16* i d @ v gs = 10v, t c = 100c continuous drain current 16* i dm pulsed drain current ? 64 p d @ t c = 25c max. power dissipation 100 w linear derating factor 0.8 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 230 mj i ar avalanche current ? 16* a e ar repetitive avalanche energy ? 10 mj dv/dt p eak diode recovery dv/dt ? 5.5 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300(0.063in./1.6mm from case for 10 sec) weight 4.3 (typical) g pd - 91287c hexfet ? mosfet technology is the key to international rectifier?s advanced line of power mosfet transistors. the efficient geometry design achieves very low on-state re- sistance combined with high transconductance. hexfet transistors also feature all of the well-established advan- tages of mosfets, such as voltage control, very fast switch- ing, ease of paralleling and electrical parameter temperature stability. they are well-suited for applications such as switch- ing power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. the hexfet transistor?s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. this improves thermal efficiency and reduces drain capacitance. o c a power mosfet thru-hole (to-257aa) 4/18/01 www.irf.com 1 100v, n-channel hexfet ? mosfet technology to-257aa product summary part number r ds(on) i d eyelets irfy140c 0.077 ? 16*a ceramic IRFY140CM 0.077 ? 16*a ceramic features: simple drive requirements ease of paralleling hermetically sealed electrically isolated ceramic eyelets ideally suited for space level applications for footnotes refer to the last page irfy140c,IRFY140CM * current is limited by pin diameter
irfy140c, IRFY140CM 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test cond itions bv dss drain-to-source breakdown voltage 100 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.1 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.077 ? v gs = 10v, i d = 16a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 9.1 ? ? s ( )v ds > 15v, i ds = 16a ? i dss zero gate voltage drain current ? ? 25 v ds = 80v ,v gs =0v ? ? 250 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 59 v gs =10v, i d = 16a q gs gate-to-source charge ? ? 12 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 30.7 t d (on) turn-on delay time ? ? 21 v dd = 50v, i d = 16a, t r rise time ? ? 145 r g = 9.1 ? t d (off) turn-off delay time ? ? 64 t f fall time ? ? 105 l s + l d total inductance ? 6.8 ? c iss input capacitance ? 1660 ? v gs = 0v, v ds = 25v c oss output capacitance ? 550 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 120 ? na ? ? nh ns a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 1.25 r thcs case-to-sink ? 0.21 ? r thja junction-to-ambient ? ? 80 typical socket mount c/w source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 16 i sm pulse source current (body diode) ? ? ? 100 v sd diode forward voltage ? ? 1.5 v t j = 25c, i s = 16a, v gs = 0v ? t rr reverse recovery time ? ? 400 ns t j = 25c, i f = 16a, di/dt 100a/ s q rr reverse recovery charge ? ? 2.4 c v dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
www.irf.com 3 irfy140c, IRFY140CM fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics id =16a
irfy140c, IRFY140CM 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage id =16a 3
www.irf.com 5 irfy140c, IRFY140CM fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature
irfy140c, IRFY140CM 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 1 0 .
www.irf.com 7 irfy140c, IRFY140CM ? i sd 16a, di/dt 170a/ s, v dd 100v, t j 150 c ? pulse width 300 s; duty cycle 2% ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 25v, starting t j = 25 c, l= 1.8mh peak i l = 16a, v gs = 10v footnotes: case outline and dimensions ? to-257aa ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/01
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