? 2006 ixys all rights reserved ds99598e(08/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 800 v v gs(th) v ds = v gs , i d = 1 ma 3.0 5.0 v i gss v gs = 30 v, v ds = 0 v 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 500 a r ds(on) v gs = 10 v, i d = 3.5 a 1.44 note 1 polarhv tm hiperfet power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode IXFP7N80PM v dss = 800 v i d25 = 3.5 a r ds(on) 1.44 t rr 250 ns symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 3.5 a i dm t c = 25 c, pulse width limited by t jm 18 a i ar t c = 25 c4a e ar t c = 25 c20mj e as t c = 25 c 300 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 p d t c = 25 c50w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 3.0 g g = gate d = drain s = source features z plastic overmolded tab for electrical isolation z fast intrinsic diode z international standard package z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density overmolded to-220 (ixtp...m) outline g d s isolated tab (electrically isolated tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXFP7N80PM symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 3.5 a, note 1 5 9.5 s c iss 1890 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 133 pf c rss 13 pf t d(on) 28 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 4 a 32 ns t d(off) r g = 10 (external) 55 ns t f 24 ns q g(on) 32 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 6 a 12 nc q gd 9nc r thjc 2.5 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 7 a i sm repetitive 18 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = 7 a, -di/dt = 100 a/ s, 250 ns q rm v r = 100 v, v gs = 0 v 0.3 c i rm 3a notes: 1) pulse test, t 300 s, duty cycle d 2 % terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 12 3 isolated to-220 (ixfp...m) ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2006 ixys all rights reserved IXFP7N80PM fig. 1. output characteristics @ 25oc 0 1 2 3 4 5 6 7 012345678910 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 3. output characteristics @ 125oc 0 1 2 3 4 5 6 7 0 2 4 6 8 10 12 14 16 18 20 22 24 v ds - volts i d - amperes v gs = 10v 6v 5v fig. 4. r ds(on) norm alized to i d = 3.5a value vs. junction temperature 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50-25 0 255075100125150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 7a i d = 3.5a fig. 5. r ds(on) normalized to i d = 3.5a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0246810121416 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFP7N80PM fig. 7. input admittance 0 1 2 3 4 5 6 7 8 3.4 3.6 3.8 4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8 6 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 2 4 6 8 10 12 14 16 18 0123456789 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 2 4 6 8 10 12 14 16 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 q g - nanocoulombs v gs - volts v ds = 400v i d = 3.5a i g = 10ma fig. 11. capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal resistance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w
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