publication date : oct 2011 1 < silicon rf power module s > RA45H4045MR rohs compliance, 400 - 450 mhz 45 w 12.5 v , 3 stage amp. for mobile radio description the ra 45h4045 m r is a 45 - watt rf mosfet amplifier module for 12.5 - volt m obile radios that operate in the 400 - to 450 - mhz range. the battery can be connected directly to the drain of the enhancement - mode mosfet transistors. without the gate voltage (v gg =0v), only a small leakage current flows into the drain and the rf input signal attenuates up to 60 db. the output power and drain curr ent increase as the gate voltage increases. with a gate voltage around 4v (minimum), output power and drain current increases substantially. the nominal output power becomes available at 4.5v (typical) and 5v (maximum). at v gg =5v, the typical gate curre nt is 1 ma. this module is designed for non - linear fm modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. features ? enhancement - mode mo sfet transistors (i dd ? 0 @ v dd = 12.5 v, v gg =0v) ? p out > 45 w , ? t > 35 % @ v dd = 12.5 v, v gg =5v, p in = 5 0mw ? broadband frequency range: 40 0 - 45 0mhz ? low - power control current i gg = 1 ma (typ) at v gg =5v ? module size: 66 x 21 x 9.88 mm ? reverse pin type ? linear opera tion is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power rohs complian ce ? ra 45h4045 m r - 101 is a rohs complian t products. ? rohs compliance is indicate by the letter ?g? after the lot marking . ? this product include the lead in the glass of electronic parts and the lead in electronic ceramic parts. however, it is applicable to the following exceptions of rohs directions. 1.lead in the g lass of a cathode - ray tube, electronic parts, and fluorescent tubes. 2.lead in electronic c eramic parts. ordering information: order number supply form ra 45h4045 m r - 1 01 antistatic tray, 10 modules/tray 1 rf input (p in ) 2 gate voltage (v gg ), power control 3 drain voltage (v dd ), battery 4 rf output (p out ) 5 rf ground (case) block diagram 2 4 1 5 3 package code: h2rs
< silicon rf power module s > RA45H4045MR rohs compliance, 400 - 450 mhz 45 w 12.5 v , 3 stage amp. for mobile radio publication date : oct 2011 2 maximum ratings ( t case =+25 c , unless otherwise specified ) symbol parameter conditions rating unit v dd drain voltage v gg <5 v 17 v v gg gate voltage v dd <12.5 v, p in =0mw 6 v p in input power 100 mw p out output power 55 w t case(op) operation case temperature range f= 400 - 450 mhz, z g =z l =50 ? - 30 to + 110 c t stg storage temperature range - 40 to +110 c above parameters are guaranteed independently electrical characteristics ( t case =+25 c , z g =z l =50 ? , unless otherwise specified ) symbol parameter conditions min typ max unit f frequency range 400 - 450 mhz p out output power 4 5 - - w ? t total efficiency 35 - - % 2f o 2 nd harmonic - - - 25 dbc ? in input vswr - - 3:1 ? i gg gate current v dd = 12.5 v v gg = 5 v p in = 5 0mw - 1 - ma ? stability v dd = 10.0 - 15.2 v , p in =25 - 70mw, p o ut <55w (v gg c ontrol) , load vswr= 3 :1 no parasitic oscillation ? ? load vswr tolerance v dd = 15 .2v, p in = 5 0mw, p out = 45 w (v gg c ontrol), l oad vswr =20:1 no degradation or destroy ? all parameters, conditions, ratings and limits are subject to change without notice
< silicon rf power module s > RA45H4045MR rohs compliance, 400 - 450 mhz 45 w 12.5 v , 3 stage amp. for mobile radio publication date : oct 2011 3 output power, total efficiency, 2 nd , 3 rd harmonics versus frequency and input vswr versus frequency output power, power gain and output power, power gain and drain current versus input power drain current versus input power 0 10 20 30 40 50 60 70 80 390 400 410 420 430 440 450 460 frequency f(mhz) o u t p u t p o w e r p o u t ( w ) i n p u t v s w r ? i n ( - ) 0 10 20 30 40 50 60 70 80 t o t a l e f f i c i e n c y ? t ( % ) v dd =12.5v v gg =5v p in =50mw p out ? t ? in 0 10 20 30 40 50 60 -15 -10 -5 0 5 10 15 20 input power p in (dbm) o u t p u t p o w e r p o u t ( d b m ) p o w e r g a i n g p ( d b ) 0 4 8 12 16 20 24 d r a i n c u r r e n t i d d ( a ) f=400mhz, v dd =12.5v, v gg =5v p out i dd gp 0 10 20 30 40 50 60 -15 -10 -5 0 5 10 15 20 input power p in (dbm) o u t p u t p o w e r p o u t ( d b m ) p o w e r g a i n g p ( d b ) 0 4 8 12 16 20 24 d r a i n c u r r e n t i d d ( a ) f=430mhz, v dd =12.5v, v gg =5v p out gp i dd -70 -60 -50 -40 -30 -20 390 400 410 420 430 440 450 460 frequency f(mhz) h a r m o n i c s ( d b c ) v dd =12.5v v gg =5v p in =50mw 2 nd 3 rd output power, power gain and drain current versus input power output power and drain current output power and drain current versus drain voltage versus drain voltage 0 10 20 30 40 50 60 70 80 90 100 2 4 6 8 10 12 14 16 drain voltage v dd (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 14 16 18 20 d r a i n c u r r e n t i d d ( a ) p out f=400mhz, v gg =5v, p in =50mw i dd 0 10 20 30 40 50 60 -15 -10 -5 0 5 10 15 20 input power p in (dbm) o u t p u t p o w e r p o u t ( d b m ) p o w e r g a i n g p ( d b ) 0 4 8 12 16 20 24 d r a i n c u r r e n t i d d ( a ) f=450mhz, v dd =12.5v, v gg =5v p out gp i dd 0 10 20 30 40 50 60 70 80 90 100 2 4 6 8 10 12 14 16 drain voltage v dd (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 14 16 18 20 d r a i n c u r r e n t i d d ( a ) p out f=430mhz, v gg =5v, p in =50mw i dd typical performance ( t case =+25c, z g =z l =50 ? , unless otherwise specified )
< silicon rf power module s > RA45H4045MR rohs compliance, 400 - 450 mhz 45 w 12.5 v , 3 stage amp. for mobile radio publication date : oct 2011 4 output power and drain current versus drain voltage output power and drain current output power and drain current versus gate voltage versus gate voltage output power and drain current versus gate voltage 0 10 20 30 40 50 60 70 80 2.5 3 3.5 4 4.5 5 5.5 gate voltage v gg (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 14 16 d r a i n c u r r e n t i d d ( a ) p out f=400mhz, v dd =12.5v, p in =50mw i dd 0 10 20 30 40 50 60 70 80 90 100 2 4 6 8 10 12 14 16 drain voltage v dd (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 14 16 18 20 d r a i n c u r r e n t i d d ( a ) p out f=450mhz, v gg =5v, p in =50mw i dd 0 10 20 30 40 50 60 70 80 2.5 3 3.5 4 4.5 5 5.5 gate voltage v gg (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 14 16 d r a i n c u r r e n t i d d ( a ) p out f=430mhz, v dd =12.5v, p in =50mw i dd 0 10 20 30 40 50 60 70 80 2.5 3 3.5 4 4.5 5 5.5 gate voltage v gg (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 14 16 d r a i n c u r r e n t i d d ( a ) p out f=450mhz, v dd =12.5v, p in =50mw i dd typical performance ( t case =+25c, z g =z l =50 ? , unless otherwise specified )
< silicon rf power module s > RA45H4045MR rohs compliance, 400 - 450 mhz 45 w 12.5 v , 3 stage amp. for mobile radio publication date : oct 2011 5 outline drawing (mm) 1 rf i nput (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf o utput (p out ) 5 rf g round (case) 1 0.5 1 22 .5 1 4 9 .5 1 5 4.0 1 66.0 0.5 60.0 0.5 51.5 0.5 3.0 0.3 7.25 0.8 1 4 . 0 1 2 1 . 0 0 . 5 9 . 5 0 . 5 2 . 0 0 . 5 2 - r2 0.5 1 7 . 0 0 . 5 ?0.45 0.15 4 . 0 0 . 3 5 4 3 2 1 3 . 1 + 0 . 6 / - 0 . 4 7 . 5 0 . 5 2 . 3 0 . 3 ( 9 . 8 8 ) (50.4) 0 . 0 9 0 . 0 2
< silicon rf power module s > RA45H4045MR rohs compliance, 400 - 450 mhz 45 w 12.5 v , 3 stage amp. for mobile radio publication date : oct 2011 6 1 rf i nput (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf o utput (p out ) 5 rf g round (case) test block diagram equ ivalent circuit equivalent circuit c1, c2 : 4700pf, 22uf in parallel attenuator power meter spectrum analyzer pre - amplifier power meter dut 5 1 2 3 4 z l =50 ? z g =50 ? c 2 c 1 - + dc power supply v dd + - dc power supply v gg attenuator directional coupler 1 5 2 3 4 directional coupl er attenuator signal generator
< silicon rf power module s > RA45H4045MR rohs compliance, 400 - 450 mhz 45 w 12.5 v , 3 stage amp. for mobile radio publication date : oct 2011 7 recommendations and application information: construction: this module consists of an alumina substrate soldered on a copper flange. for mechanical protection a plastic cap is attached by silicone. the mosfet transistor chips are die bonded onto metal, wire bonded to the substrate and coated by resin. lines on the substrate (eventuall y inductors), chip capacitors and resistors form the bias and matching circuits. wire leads soldered onto the alumina substrate provide dc and rf connection. following conditions shall be avoided: a) bending forces on the alumina substrate (for example dur ing s c rewing or by fast thermal changes) b) mechanical stress on the w ire leads (for example by first soldering then screwing or by thermal expansion) c) d efluxing solvents reacting with the resin coating the mosfet chips (for example trichloroethylene) d) esd, surge, overvoltage in combination with load vswr, oscillation, etc. esd: this mosfet module is sensitive to esd voltages down to 1000v. appropriate esd precautions are required. mounting: the heat sink flatness shall be less than 50m (not flat heat sink or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later when thermal expansion forces are added). thermal compound between module and heat sink is re commended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by temperature difference to the heat sink. the module shall first be screwed to the heat sink, after this the leads can be soldered to the pcb. m 3 screws are recommended with tightening torque 4.0 to 6.0 kgf - cm . soldering and defluxing: this module is designed for manual soldering. the leads shall be soldered after the module is screwed onto the heat sink. the temperature of the lead (terminal) sol dering should be lower than 350c and shorter than 3 second. ethyl alcohol is recommend for removing flux. trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). therma l design of the heat sink: at p out = 45 w, v dd =12.5v and p in =50mw each stage transistor operating conditions are : stage p in (w) p out (w) r th(ch - case) (c/w) i dd @ ? t = 35 % (a) v dd (v) 1 st 0.05 2.0 23.0 0. 24 2 nd 2.0 12 .0 2.4 2.80 3 rd 12 .0 45 .0 1. 2 6.80 12.5 the channel temperatures of each stage transistor t ch = t case + (v dd x i dd - p out + p in ) x r th(ch - case) are: t ch1 = t case + (12.5v x 0. 24 a ? 2.0 w + 0.05w) x 23.0 c/w = t case + 24.2 c t ch2 = t case + (12.5v x 2.8 0a - 12 .0w + 2.0 w) x 2.4c/w = t case + 60.0 c t ch3 = t case + (12.5v x 6.8 0a - 45 .0w + 12 .0w) x 1. 2 c/w = t case + 62.4 c for long term reliability the module case temperature t case is better kept below 90c. for an ambient temperature t air =60c and p out = 45 w the required thermal resistance r th (cas e - air) = ( t case - t air ) / ( (p out / ? t ) - p out + p in ) of the heat sink, including the contact resistance, is: r th(case - air) = (90c - 60c) / ( 45 w/ 35 % ? 45 w + 0.0 5 w) = 0.36 c/w when mounting the module with the thermal resistance of 0.36 c/w, the cha nnel temperature of each stage transistor is: t ch1 = t air + 54.2 c t ch2 = t air + 90.0 c t ch3 = t air + 92.4 c 175c maximum rating for the channel temperature ensures application under derated conditions. output power control: depending on linearity foll owing 2 methods are recommended to control the output power: a) non - linear fm modulation: by gate voltage v gg . when the gate voltage is close to zero, the rf input signal is attenuated up to 60db and only a small leakage current is flowing from the battery into the drain. around v gg =4v the output power and drain current increases strongly. around v gg =4.5v, latest at v gg =5v, the nominal output power becomes available. b) linear am modulation: by rf input power p in . the gate voltage is used to set the drain quiescent current for the required linearity.
< silicon rf power module s > RA45H4045MR rohs compliance, 400 - 450 mhz 45 w 12.5 v , 3 stage amp. for mobile radio publication date : oct 2011 8 oscillation: to test rf characteristic this module is put on a fixture with 2 bias decoupling capacitors each on gate and drain, a 4.700pf chip capacitor, located close to the module, and a 22f (or more) ele ctrolytic capacitor. when an amplifier circuit around this module shows oscillation following may be checked: a) do the bias decoupling capacitors have a low inductance pass to the case of the module ? b) is the load impedance z l =50 ? ? c) is the source imp edance z g =50 ? ? attention: 1.high temperature ; this product might have a heat generation while operation,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2.generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3.before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of mi tsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specific ation sheets, please contact one of our sales offices. 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in o ther applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. they are sens itive to esd voltage therefore appropriate esd precautions are required. 4. in the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltage. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temper ature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exce eded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precautions regarding a ssembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s origina l form. 9. for additional ?safety first? in your circuit design and notes regarding the materials, please refer the last page of this data sheet . 10. please refer to the additional precautions in the formal specification sheet.
< silicon rf power module s > RA45H4045MR rohs compliance, 400 - 450 mhz 45 w 12.5 v , 3 stage amp. for mobile radio publication date : oct 2011 9 ? 2011 mitsubishi electric corpo ration. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporatio n puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - part y?s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that cust omers contact mitsubishi electric corporation or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or t ypographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by vario us means, including the mitsubishi semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to e valuate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported unde r a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? pl ease contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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