sot-563 1 dual digital transistors (npn+ pnp) features two dta114y and dtc114y transistors are built-in a package marking: d9 equivalent circuit dtr1 absolute maximum ratings (t a =25 ) parameter symbol limits unit supply voltage v cc 50 v input voltage v in -6~+40 v i o 70 output current i c(max) 100 ma power dissipation p d 150 mw junction temperature t j 150 storage temperature t stg -55~150 electrical characteristics (t a =25 ) parameter symbol min typ max unit conditions v i(off) 0.3 v cc =5v ,i o =100 a input voltage v i(on) 1.4 v v o =0.3v ,i o =1ma output voltage v o(on) 0.1 0.3 v i o =5ma, i i =0.25ma input current i i 0.88 ma v i =5v output current i o(off) 0.5 a v cc =50v, v i =0 dc current gain g i 68 v o =5v ,i o =5ma input resistance r 1 7 10 13 k ? resistance ratio r 2 /r 1 3.7 4.7 5.7 transition frequency f t 250 mhz v o =10v ,i o =5ma,f=100mhz EMD9 www.htsemi.com semiconductor jinyu 1 date:2011/ 05
dtr2 absolute maximum ratings (t a =25 ) parameter symbol limits unit supply voltage v cc -50 v input voltage v in -40~+6 v i o -70 output current i c(max) -100 ma power dissipation p d 150 mw junction temperature t j 150 storage temperature t stg -55~150 electrical characteristics (t a =25 ) parameter symbol min typ max unit conditions v i(off) -0.3 v cc =-5v ,i o =-100 a input voltage v i(on) -1.4 v v o =-0.3v ,i o =-1ma output voltage v o(on) -0.1 -0.3 v i o =-5ma,i i =-0.25ma input current i i -0.88 ma v i =-5v output current i o(off) -0.5 a v cc =-50v, v i =0 dc current gain g i 68 v o =-5v ,i o =-5ma input resistance r 1 7 10 13 k ? resistance ratio r 2 /r 1 3.7 4.7 5.7 transition frequency f t 250 mhz v o =-10v ,i o =-5ma,f=100mhz EMD9 www.htsemi.com semiconductor jinyu 2 date:2011/ 05
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