description: the central semiconductor cmwsh-4, 40v, low v f , consists of two galvanically isolated supermini tm silicon schottky diodes. the cmwsh-4 has been designed for use in high speed surface mount switching applications. marking code: wsh4 maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v continuous forward current i f 100 ma peak repetitive forward current i frm 350 ma forward surge current, tp=10 ms i fsm 750 ma power dissipation p d 350 mw operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =25v 90 500 na i r v r =25v, t a =100c 25 100 a i r v r =40v 0.23 5.0 a v f i f =2.0ma 0.29 0.33 v v f i f =15ma 0.40 0.45 v v f i f =100ma 0.52 0.60 v c t v r =1.0v, f=1.0mhz 10.0 pf t rr i f =i r =10ma, i rr =1.0ma, r l =100 ? 5.0 ns cmwsh-4 surface mount supermini tm dual isolated silicon schottky diodes sot-343 case central semiconductor corp. tm r1 (14-november 2002)
lead code: 1) cathode d1 2) anode d1 3) anode d2 4) cathode d2 marking code: wsh4 central semiconductor corp. tm sot-343 case - mechanical outline cmwsh-4 surface mount supermini tm dual isolated silicon schottky diodes r1 (14-november 2002)
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