1 http://www.fujielectric.com/products/semiconductor/ 2MBI1000VXB-170E-50 igbt modules igbt module (v series) 1700v / 1000a / 2 in one package features high speed switching voltage drive low inductance module structure applications inverter for motor drive ac and dc servo drive amplifer uninterruptible power supply industrial machines, such as welding machines maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specifed) items symbols conditions maximum ratings units inverter collector-emitter voltage v ces 1700 v gate-emitter voltage v ges 20 v collector current ic continuous tc=25c 1400 a tc=100c 1000 ic pulse 1ms 2000 -ic 1000 -ic pulse 1ms 2000 collector power dissipation pc 1 device 6250 w junction temperature tj 175 c operating junction temperature (under switching conditions) t jop 150 case temperature t c 150 storage temperature tstg -40 ~ +150 isolation voltage between terminal and copper base (*1) v iso ac : 1min. 4000 vac between thermistor and others (*2) screw torque (*3) mounting - m5 6.0 n m main terminals m8 10.0 sense terminals m4 2.1 note *1: all terminals should be connected together during the test. note *2: two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. note *3: recommendable value : mounting 3.0 ~ 6.0 nm (m5) recommendable value : main terminals 8.0 ~ 10.0 nm (m8) recommendable value : sense terminals 1.8 ~ 2.1 nm (m4) electrical characteristics (at tj= 25c unless otherwise specifed) items symbols conditions characteristics units min. typ. max. inverter zero gate voltage collector current i ces v ge = 0v, v ce = 1700v - - 6.0 ma gate-emitter leakage current i ges v ce = 0v, v ge = 20v - - 1200 na gate-emitter threshold voltage v ge (th) v ce = 20v, i c = 1000ma 6.0 6.5 7.0 v collector-emitter saturation voltage v ce (sat) (terminal) (*4) v ge = 15v i c = 1000a tj=25c - 2.10 2.55 v tj=125c - 2.50 - tj=150c - 2.55 - v ce (sat) (chip) tj=25c - 2.00 2.45 tj=125c - 2.40 - tj=150c - 2.45 - input capacitance cies v ce = 10v, v ge = 0v, f = 1mhz - 94 - nf turn-on time ton v cc = 900v i c = 1000a v ge = 15v r g = +1.2/-1.8? - 1.25 - s tr - 0.5 - tr (i) - 0.15 - turn-off time toff - 1.55 - tf - 0.15 - forward on voltage v f (terminal) (*4) v ge = 0v i f = 1000a tj=25c - 1.95 2.40 v tj=125c - 2.20 - tj=150c - 2.15 - v f (chip) tj=25c - 1.85 2.30 tj=125c - 2.10 - tj=150c - 2.05 - reverse recovery time trr i f = 1000a - 0.24 - s thermistor resistance r t=25c - 5000 - ? t=100c 465 495 520 b value b t=25/50c 3305 3375 3450 k note *1: please refer to page 6 , there is defnition of on-state voltage at terminal. thermal resistance characteristics items symbols conditions characteristics units min. typ. max. thermal resistance (1device) rth(j-c) inverter igbt - - 0.024 c/w inverter fwd - - 0.048 contact thermal resistance (1device) (*5) rth(c-f) with thermal compound - 0.0083 - note *5: this is the value which is defned mounting on the additional cooling fn with thermal compound.
2 igbt modules 2MBI1000VXB-170E-50 http://www.fujielectric.com/products/semiconductor/ 3 characteristics (representative) [inverter] dynamic gate charge (typ.) vcc=900v, ic=1000a, tj= 25c collector current vs. collector-emitter voltage (typ.) tj= 150c / chip gate capacitance vs. collector-emitter voltage (typ.) v ge = 0v, ?= 1mhz, tj= 25c [inverter] collector current vs. collector-emitter voltage (typ.) v ge = 15v / chip [inverter] collector-emitter voltage vs. gate-emitter voltage (typ.) tj= 25c / chip [inverter] [inverter] [inverter] collector current vs. collector-emitter voltage (typ.) tj= 25c / chip 1 10 100 1000 0 10 20 30 5 collector-emitter voltage: v ce [v] gat e c apac it anc e: c ie s, c oe s, c res [ nf ] cies cres coes 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 1 2 3 4 5 collector-emitter voltage: v ce [v] c o lle c t o r c u rr en t: i c [ a] v ge =20v 15v 12v 10v 8v 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 1 2 3 4 5 collector-emitter voltage: v ce [v] c o llec t o r c u rr en t: i c [ a] v ge = 20v 12v 15v 10v 8v 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 1 2 3 4 5 collector-emitter voltage: v ce [v] c o lle c t o r c u rr en t: i c [ a] 125c tj = 25 c 150c 0 2 4 6 8 10 5 10 15 20 25 gate-emitter voltage: v ge [v] c olle ct or-em i tt er volt age: v ce [ v] ic=2000a ic=1000a ic=500a 0 2000 4000 6000 8000 10000 12000 gate charge: qg [nc] c olle ct or-em i tt er v olt age: v ce [ 200v/ div ] gat e-em i tt er v olt age : v ge [ 5v/ div ] v ce v ge 15 25
2 3 igbt modules 2MBI1000VXB-170E-50 http://www.fujielectric.com/products/semiconductor/ [inverter] [inverter] switching time vs. gate resistance (typ.) vcc=900v, ic=1000a, v ge =15v, tj=125c, 150c switching loss vs. collector current (typ.) vcc=900v, v ge =15v, r g =+1.2/-1.8?, tj=125c, 150c [inverter] reverse bias safe operating area (max.) vcc=900v, v ge =15v, r g =+1.2/-1.8?, tj=125c, 150c switching time vs. collector current (typ.) [inverter] [inverter] [inverter] switching time vs. collector current (typ.) vcc=900v, v ge =15v, r g =+1.2/-1.8?, tj=25c +v ge =15v, -v ge =15v, r g =+1.2/-1.8?, tj=150c vcc=900v, ic=1000a, v ge =15v, tj=125c, 150c switching loss vs. gate resistance (typ.) 10 100 1000 10000 0 500 1000 1500 2000 2500 collector current: ic [a] sw it c h i ng t im e : t on , t r , t o ff, tf [ n s e c ] tf tr toff ton 10 100 1000 10000 0 500 1000 1500 2000 2500 collector current: ic [a] sw it c h i ng t im e : t on , t r , t o ff, tf [ n s e c ] tf tr toff ton tj=125 o c tj=150 o c 10 100 1000 10000 0 1 1 1 . 0 gate resistance: r g [?] sw it c h i ng t im e : t on , t r , t o ff, tf [ n s e c ] tf tr toff ton tj=125 o c tj=150 o c 0 100 200 300 400 500 600 700 800 900 0 500 1000 1500 2000 2500 collector current: ic [a] sw it c h i ng lo ss : e on , eo ff, err [ mj / pu ls e ] eon eoff err tj=125 o c tj=150 o c 0 200 400 600 800 1000 1200 0 1 1 0 gate resistance: r g [?] sw it c h i ng lo ss : e on , eo ff, err [ mj / pu ls e ] eoff err eon tj=125 o c tj=150 o c 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 collector-emitter voltage: v ce [v] c o llec t o r c u rr en t: i c [ a] notice) please refer to page 6. there is definision of v ce .
4 igbt modules 2MBI1000VXB-170E-50 http://www.fujielectric.com/products/semiconductor/ 5 reverse recovery characteristics (typ.) vcc=900v, v ge =15v, r g =+1.2/-1.8?, tj=125c, 150c [thermistor] [inverter] ] r e t r e v n i [ ] r e t r e v n i [ transient thermal resistance (max.) forward current vs. forward voltage (typ.) chip reverse recovery characteristics (typ.) vcc=900v, v ge =15v, r g =+1.2/-1.8?, tj=25c temperature characteristic (typ.) forward on voltage: v f [v] f o rw a rd c u rr en t: i f [ a] 10 100 1000 10000 0 500 1000 1500 2000 2500 forward current: i f [a] r e v e rs e re c o v e ry c u rr en t: i rr [ a] r e v e rs e re c o v e ry t im e : t rr [ n s e c ] irr trr 0.001 0.01 0.1 0.001 0.01 0.1 1 pulse width : pw [sec] t herm al res i st ans e: rt h(j-c ) [ c/ w ] igbt fwd 0.1 1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 temperature [c] r e s is t an c e : r [ k ? ] 10 100 1000 10000 0 500 1000 1500 2000 2500 forward current: i f [a] r e v e rs e re c o v e ry c u rr en t: i rr [ a] r e v e rs e re c o v e ry t im e : t rr [ n s e c ] irr trr tj=125 o c tj=150 o c 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 1 2 3 4 125c tj=25c 150c
4 5 igbt modules 2MBI1000VXB-170E-50 http://www.fujielectric.com/products/semiconductor/ label2 (fuji internal control codes) * this label ma y be eliminated without notification. label [ inverter ] main c1 main e2 main c2e1 g1 sense c1 sense c2e1 g2 sense e2 [ thermistor ] th1 th2 outline drawings, mm equivalent circuit schematic
6 igbt modules 2MBI1000VXB-170E-50 http://www.fujielectric.com/products/semiconductor/ 7 defnition of on-state voltage at terminal and switching characteristics main c1 main e2 main c2e1 g1 sense c1 sense c2e1 g2 sense e2 v ce (terminal) of upper arm v ce (terminal) of lower arm fuji defined v ce value of terminal by using sense c1 and sense c2e1 for upper arm and sense c2e1 and sense e2 for lower arm . switching characteristics of v ce also is defined between sense c1 and sense c2e1 for upper arm and sense c2e1 and sense e2 for lower arm . please use these terminals whenever measure spike voltage and on-state voltage .
6 7 igbt modules 2MBI1000VXB-170E-50 http://www.fujielectric.com/products/semiconductor/ warning 1. this catalog contains the product specifcations, characteristics, data, materials, and structures as of may 2011. the contents are subject to change without notice for specifcation changes or other reasons. when using a product listed in this catalog, be sur to obtain the latest specifcations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric co., ltd. is (or shall be deemed) granted. fuji electric co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fre, or other problem if any of the products become faulty. it is recommended to make your design failsafe, fame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traffc-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2011 by fuji electric co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric co., ltd. or its sales agents before using the product. neither fuji electric co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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