* batch process design, excellent power dissipation o ers better reverse leakage current and thermal resistance. * low pro le surface mounted application in order to optimize board space. * tiny plastic smd package. * high current capability. * super fast reovery time for switching mode application. * high surge current capability. * glass passivated chip junction. reverse v ol t age 50 to 600 volts for w ard current 1.0 ampere http://www .weitron.com.tw sfm11mh thru surface mount standard recovery featu r es: weitron glass passivated rectifiers sfm18mh mechanical data: * case : molded plastic, jedec sod-123 h * terminals : solder plated, s olderable per mil-std-750, method 202 6 * polarity : indicated by cathode ban d * mounting position : an y * weight : 0.011 gra m sod-123h outline dimension unit:mm a c b h j h 3.30 3.70 1.40 1.80 - 0.30 ( t yp) h - 0.80 ( t yp) j 0.6 1.00 a b c sod-123h dim min max sod-123h lea d( p b)- f r ee p b 1/3 05-dec-08
characteristics s y m b o l unit m a x i m u m r e c u r r e n t p e a k r e v e r s e v o l t a g e m a x i m u m r m s v o l t a g e m a x i m u m d c b l o c k i n g v o l t a g e m a x i m u m a v e r a g e f o r w a r d r e c t i f i e d c u r r e n t @ t = 5 0c p e a k f o r w a r d s u r g e c u r r e n t , 8 . 3 m s s i n g l e h a l f s i n e - w a v e s u p e r i m p o s e d o n r a t e d l o a d ( j e d e c m e t h o d ) m a x i m u m i n s t a n t a n e o u s a t 1 . 0 a d c m a x i m u m d c r e v e r s e c u r r e n t @ t = 2 5 c a t r a t e d d c b l o c k i n g v o l t a g e @ t = 1 0 0 c t y p i c a l j u n c t i o n c a p a c i t a n c e ( n o t e 1 ) t y p i c a l t h e r m a l r e s i s t a n c e ( n o t e 2 ) o p e r a t i n g t e m p e r a t u r e r a n g e s t o r a g e t e m p e r a t u r e r a n g e v v v a a v u a c c v r r m v r m s v d c i f ( a v ) i f s m v f i r c j a t t s t g 3 5 7 0 1 4 0 2 8 0 4 2 0 -65 to +175 -65 to +175 f c / w 5.0 100 10(typ) 42(typ) h t t p : / / w w w . w e i t r o n . c o m . t w w e i t r o n j j p r 5 6 0 7 0 0 1 . 0 2 5 0.95 1.25 1.70 a a a d e v i c e m a r k i n g i t e m m a r k i n g sfm11mh sfm12mh sfm13mh SFM14MH sfm15mh sfm16mh sfm17mh sfm18mh s1 s2 s3 s4 i t e m m a r k i n g s5 s6 s6 s7 sfm11mh thru sfm18mh 2/3 05-dec-08 maximum ratings (t a =25oc unless otherwise no t ed) sfm18 mh 50 100 150 200 300 400 500 600 50 100 150 200 300 400 500 600 3 5 sfm11 mh sfm12 mh sfm13 mh sfm14 mh sfm15 mh sfm16 mh sfm17 mh
w e i t r o n h t t p : / / w w w . w e i t r o n . c o m . t w sfm11mh thru sfm18mh 3/3 05-dec-08 .4 .6 .8 1.0 1.2 1.4 .001 .01 .1 1.0 10 rating and characteristic curves (sfm11mh thru sfm18mh) fig.1-typical forward characteristics fig.5-typical junction capacit ance i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) forward volt age,(v) pulse width 300us 1% duty cycle (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non- inductive notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | | | | | | | | 1cm set time base for 50 / 10ns / cm trr d.u.t. fig.3- test circuit diagram and reverse recovery time characteristics 10 noninductive 50 noninductive t =25 c j fig.2-typical forward current a v e r a g e f o r w a r d c u r r e n t , ( a ) 0.2 0.4 0.6 0.8 1.0 1.2 single phase half wave 60hz resistive or inductive load derating curve ambient temperature ( c) 1.6 1.8 s f m 15 mh ~ s f m 16 mh s f m 1 1 mh ~ s f m 1 4 mh reverse voltage,(v) j u n c t i o n c a p a c i t a n c e , ( p f ) 70 60 50 40 30 20 10 0 .01 .05 .1 .5 1 5 10 50 100 0 25 50 75 100 125 150 175 0 fig.4-maximum non-repetitive forward surge current 5 0 10 15 20 25 number of cycles at 60hz 1 10 5 50 100 t =25 c j 8.3ms single half sine wave jedec method p e a k f o r w a r d s u r g e c u r r e n t , ( a ) sf m 17 mh ~s fm 18 mh
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