CH848BPT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t npn general purpose transistor v o l t a g e 30 v o l t s c u r r e n t 0 .1 a m p e r e a p p l i c a t i o n f e a t u r e * s m a l l s u r f a c e m o u n t i n g t y p e . (sot-23) * h i g h c u r r e n t g a i n . * s u i t a b l e f o r h i g h p a c k i n g d e n s i t y . * a f i n p u t s t a g e s a n d d r i v e r a p p l i c a t i o n o n e q u i p m e n t . * o t h e r g e n e r a l p u r p o s e a p p l i c a t i o n s . 2004-06 * l o w c o l l o e c t o r - e m i t t e r s a t u r a t i o n . * h i g h s a t u r a t i o n c u r r e n t c a p a b i l i t y . c i r c u i t l i m i t i n g v a l u e s i n a c c o r d a n c e w i t h t h e a b s o l u t e m a x i m u m r a t i n g s y s t e m ( i e c 6 0 1 3 4 ) . n o t e 1 . t r a n s i s t o r m o u n t e d o n a n f r 4 p r i n t e d - c i r c u i t b o a r d . s y m b o l p a r a m e t e r c o n d i t i o n s m i n . m a x . u n i t v c b o collector-base v oltage open emitter - 30 v v ceo collector-emitter v oltage open base - 30 v v v e b o e m i t t e r - b a s e v o l t a g e o p e n c o l l e c t o r - 5 i c c o l l e c t o r c u r r e n t ( d c ) - 0.1 a p - 0.31 t stg stor age temper ature - 65 +150 c t j junction temper ature - 150 c w collector power dissipation c 0.2 - s o t - 2 3 2 3 1 2. when mounted on a 7x5x0.6mm ceramic board. n o te 2 marking * hfe(p):j16 * hfe(q):1k * hfe(y):j17 .11 9 ( 3.04 ) .007 ( 0.177) .002 ( 0.05 ) .110 ( 2.80 ) .103 ( 2.64 ) .028 ( 0.70 ) .020 ( 0.50 ) .055 ( 1.40 ) .047 ( 1.20 ) .045 ( 1.15 ) .033 ( 0.85 ) .086 (2.20) .082 ( 2.10 ) .041 ( 1.05 ) .019 ( 0.50) .018 ( 0.30 ) .033 ( 0.85 ) .066 ( 1.70 ) (1) (2) (3) dimensions in inches and (millimeters) sot-23
t h e r m a l c h a r a c t e r i s t i c s chara cteristics t amb =2 5 c unless otherwise specited. note 1. pulse test: t p 300 m s; d 0.02. symbol p arameter conditions min. max. unit i cbo collector cut-off current i e = 0; v cb = 30 v - 15 na h fe dc current transfer ratio 110 800 v cesat collector-emitter satur ation v oltage i c = 10 ma ; i b = 0.5 ma i c = 100 ma ; i b = 5 ma - - 600 250 mv mv v be(on) base-emitter satur ation v oltage i c = 2 ma;v ce = 5.0 v 0.70 v cib emitter input capacitance i e = 0; v cb = 10v ; f=1m h z - 3.5 pf f t tr ansition frequency i e = 10 ma; v ce =5 v ; f = 100 mhz 300 - mhz r a t i n g c h a r a c t e r i s t i c ( c h 8 48bpt ) r a t i n g c h a r a c t e r i s t i c c u r v e s ( c h 8 48bpt ) cob collector output capacitance i c = 0; v cb = 0.5v ; f=1m h z - 9 pf typ. v ce / i c =5v/2 ma - - 0.58 - - 90 200 v besat collector-base satur ation v oltage i c = 10 ma ; i b = 0.5 ma i c = 100 ma ; i b = 5 ma 700 900 - - - - 0.66 i c = 10ma;v ce = 5.0 v 0.72 v - - 6 nf noise figure vce=5v , ic=200ua , f=1khz , rg=2k mv mv - 2 10 db 0481 21 62 0 0 20 40 60 80 100 i b = 50 a i b = 100 a i b = 150 a i b = 200 a i b = 250 a i b = 300 a i b = 350 a i b = 400 a i c [ma], collector current v ce [v], collector-emitter voltage 1 10 100 1000 10 100 1000 10000 v ce = 5v h fe , dc current gain i c [ma], collector current fig1.static characteristic fig2 .dc current gain 2. hfe classification p:110 to 220 q: 200 to 450, y: 420 to 800
r a t i n g c h a r a c t e r i s t i c c u r v e s ( c h 8 48bpt ) 1 10 100 1000 10 100 1000 10000 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 v ce = 2v i c [ma], collector current v be [v], base-emitter voltage 1 10 100 1000 0.1 1 10 100 f=1mhz c ob [pf], capacitance v cb [v], collector-base voltage 0.1 1 10 100 1 10 100 1000 v ce =5v f t [mhz], current gain-bandwidth product i c [ma], collector current fig3.base-emitter stauration voltage collector-emitter stauration voltage fig4.base-emitter on voltage fig5.collector output capacitance fig6.current gain bandwidth product
|
