dated : 07/12/200 2 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 9016 npn silicon epitaxial planar transistor for switching and af amplifier applications. the transistor is subdivided in to six groups, d, e, f, g, h and i, according to its dc current gain. on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 ) symbol value unit collector base voltage v cbo 30 v collector emitter voltage v ceo 20 v emitter base voltage v ebo 4 v collector current i c 25 ma power dissipation p tot 400 mw junction temperature t j 150 o c storage temperature range t s -65 to +150 o c
dated : 07/12/200 2 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 9016 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at v ce =5v, i c =1ma current gain group d e f g h i h fe h fe h fe h fe h fe h fe 28 39 54 72 97 132 - - - - - - 45 60 80 108 146 198 - - - - - - collector base breakdown voltage at i c =100 a v (br)cbo 30 - - v collector emitter breakdown voltage at i c =1ma v (br)ceo 20 - - v emitter base breakdown voltage at i e =100 a v (br)ebo 4 - - v collector cutoff current at v cb =30v i cbo - - 100 na emitter cutoff current at v eb =3v i ebo - - 100 na collector emitter saturation voltage at i c =10ma, i b =1ma v ce(sat) - 0.1 0.3 v base emitter on voltage at v ce =5v, i c =1ma v be(on) - 0.72 - v collector base capacitance at v cb =10v, f=1mhz c cbo - 1.2 1.6 pf gain bandwidth product at v ce =5v, i c =1ma f t 400 620 - mhz
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