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| skim ? 5 igbt modules skim 270gd176d preliminary data features ! " # $ ! " % % # & % ' ( ) " * % + % ( ( % , ( - . " ) ( + % ( % + % % + ' " # . typical applications* " + + / 0 / 1 0 / 2 ) " % % $ . 3 & gd absolute maximum ratings / 4 " , % ( symbol conditions values units igbt ) " * 5 0 2 2 ) " / $ 0 2 & 4 " - 2 $ 5 7 2 & " 8 9 % 5 - 2 2 ) : * ; 2 ) < $ & 1 = 2 3 3 3 5 / 2 $ 5 / & 4 " % . 3 % % 5 / 4 " ) " , 5 3 2 2 ) inverse diode > / $ 0 2 & 4 " 5 / $ 5 / / & > 8 9 % 5 / = 2 > 9 % 5 2 ? 3 ? < 5 / 2 4 " 2 2 characteristics / 4 " , % ( symbol conditions min. typ. max. units igbt ) : * $ & ) : * ) " * ? " 5 / , 5 / / , 7 - , = / ) " * ) : * 2 ? ) " * ) " * ? < / 4 " 2 , 5 2 , ) " * < / $ 5 / & 4 " 5 $ 2 , @ & 5 , $ 5 , 5 & ) " * < / $ 5 / & 4 " , $ / & = , $ - & a ) " * " 2 2 ? ) : * 5 / ) , < / $ 5 / & 4 " % + $ , = & , = / $ , @ & ) " ) : * 2 ? ) " * / ) ? ( 5 9 b 5 , > " ) : * 2 ? ) " * / ) ? ( 5 9 b 5 , 5 > " ) : * 2 ? ) " * / ) ? ( 5 9 b 2 , @ > " * 2 8 " " c d * * c , 1 % / $ 5 / & 4 " 2 , @ $ 5 , 5 & a $ & ) " " 5 2 2 ) " 2 2 $ ( ( & 8 : 8 : ( ( = a ( < 5 / 4 " * $ * ( ( & ) : * ; 5 / ) 5 0 2 $ 5 2 & e * $ * ( ( & f - / ? < 5 / 4 " ) " " 5 2 2 ) ? " 2 2 e inverse diode ) > ) * " > / ? ) : * 2 ) ? < / $ 5 / & 4 " 5 , 0 $ 5 , 7 & 5 , @ $ & ) ) < / $ 5 / & 4 " 5 , $ 2 , @ & 5 , = $ 5 , 5 & ) < / $ 5 / & 4 " , $ = & , $ = & g 8 8 9 > / ? < 5 / 4 " h ) : * 5 2 2 ) i i j j " * 8 : 8 : ( ( = a e thermal characteristics 8 $ < 1 & % : # 2 , 5 0 / f i k 8 $ < 1 & % > k ! 2 , @ f i k temperature sensor 8 / $ 5 2 2 & 4 " 5 $ 5 , - 0 & l a / $ 5 2 2 & 4 " $ & m mechanical data 9 5 l $ 9 / & n 9 ( $ 9 - & = / n = - 2 skim 270gd176d 1 24-11-2008 maj ? by semikron fig. 1 output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 turn-on /-off energy = f (i c ) fig. 4 turn-on /-off energy = f (r g ) fig. 5 transfer characteristic fig. 6 gate charge characteristic skim 270gd176d 2 24-11-2008 maj ? by semikron fig. 7 switching times vs. i c fig. 8 switching times vs. gate resistor r g fig. 9 transient thermal impedance of igbt z thp(j-s) = f (t p ); d = t p /t c = t p * f fig. 10 transient thermal impedance of fwd z thp(j-s) = f (t p ); d = t p /t c = t p * f fig. 11 cal diode forward characteristic, incl. r cc'+ ee' skim 270gd176d 3 24-11-2008 maj ? by semikron dimensions in mm " f 9 / : ! " f 9 / this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. * the specifications of our components may not be considered as an assurance of component characteristics. components have to be tested for the respective application. adjustments may be necessary. the use of semikron products in life support appliances and systems is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our personal. skim 270gd176d 4 24-11-2008 maj ? by semikron |
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