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  F1200A ... f1200g F1200A ... f1200g superfast silicon rectifier diodes superschnelle silizium-gleichrichterdioden version 2011-03-14 dimensions - ma?e [mm] nominal current nennstrom 12 a repetitive peak reverse voltage periodische spitzensperrspannung 50...400 v plastic case kunststoffgeh?use ? 8 x 7.5 [mm] p600 style weight approx. gewicht ca. 1.3 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped in ammo pack standard lieferform gegurtet in ammo-pack maximum ratings grenzwerte type typ repetitive peak reverse voltage periodische spitzensperrspannung v rrm [v] surge peak reverse voltage sto?spitzensperrspannung v rsm [v] F1200A 50 50 f1200b 100 100 f1200d 200 200 f1200g 400 400 max. average forward rectified current, r-load dauergrenzstrom in einwegschaltung mit r-last t a = 50c i fav 12 a 1 ) repetitive peak forward current periodischer spitzenstrom f > 15 hz i frm 80 a 1 ) peak forward surge current, 50/60 hz half sine-wave sto?strom fr eine 50/60 hz sinus-halbwelle t a = 25c i fsm 375/390 a rating for fusing, t < 10 ms grenzlastintegral, t < 10 ms t a = 25c i 2 t 680 a 2 s junction temperature C sperrschichttemperatur in dc forward mode C bei gleichstrom-durchlassbetrieb t j t j -50...+150c +200c storage temperature C lagerungstemperatur t s -50...+175c 1 valid, if leads are kept at ambient temperature at a distance of 10 mm from case gltig, wenn die anschlussdr?hte in 10 mm abstand vom geh?use auf umgebungstemperatur gehalten werden ? diotec semiconductor ag http://www.diotec.com/ 1 type ? 0.05 1.2 ? 0.1 8 7 , 5 0 . 1 6 2 . 5 0 . 5
F1200A ... f1200g characteristics kennwerte forward voltage C durchlass-spannung t j = 25c i f = 5 a v f < 0.82 v leakage current C sperrstrom t j = 25c t j = 125c v r = v rrm i r < 10 a typ. 40 a reverse recovery time sperrverzug i f = 0.5 a through/ber i r = 1 a to/auf i r = 0.25 a t rr < 200 ns thermal resistance junction to ambient air w?rmewiderstand sperrschicht C umgebende luft r tha < 10 k/w 1 ) thermal resistance junction to leads w?rme widerstand sperrschicht C anschlussdraht r thl < 2 k/w 1 valid, if leads are kept at ambient temperature at a distance of 10 mm from case gltig, wenn die anschlussdr?hte in 10 mm abstand vom geh?use auf umgebungstemperatur gehalten werden 2 http://www.diotec.com/ ? diotec semiconductor ag forward characteristics (typical values) durchlasskennlinien (typische werte) 10 10 10 1 10 3 2 -1 [a] i f 0.4 v f 0.8 1.0 1.2 1.4 [v] 1.8 t = 25c j t = 125c j 400a-(5a-0,8v) 120 100 80 60 40 20 0 [%] i fav rated forward current versus ambient temperature ) zul. richtstrom in abh. von der umgebungstemp. ) 1 1 [c] t a 150 100 50 0 10 10 10 10 1 4 3 2 [a] i r 0 v rrm 40 60 80 100 [%] typ. instantaneous leakage current vs. reverse voltage typ. sperrstrom (augenblickswert) . sperrspannung t = 25c j t = 125c j t = 150c j


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