mch6601 no.6458-1/4 features ? low on-resistance. ? ultrahigh-speed switching. ? 1.5v drive. ? composite type with 2 mosfets contained in a single package, facilitating high-density mounting. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss --30 v gate-to-source voltage v gss 10 v drain current (dc) i d --0.2 a drain current (pulse) i dp pw10 m s, duty cycle 1% --0.8 a allowable power dissipation p d mounted on a ceramic board (900mm 2 5 0.8mm) 1unit 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0v --1 m a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--100 m a --0.4 --1.4 v forward transfer admittance ? yfs ? v ds =--10v, i d =--50ma 80 110 ms r ds (on)1 i d =--50ma, v gs =--4v 8 10.4 w static drain-to-source on-state resistance r ds (on)2 i d =--30ma, v gs =--2.5v 11 15.4 w r ds (on)3 i d =--1ma, v gs =--1.5v 27 54 w input capacitance ciss v ds =--10v, f=1mhz 7.5 pf output capacitance coss v ds =--10v, f=1mhz 5.7 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 1.8 pf marking : fa continued on next page. ordering number : en6458b 70306 / 42806 ms im tb-00002289 / o3105pe ms im tb-00001865 / n2499 ts im ta-2457 mch6601 p-channel silicon mosfet general-purpose switching device applications sanyo semiconductors data sheet tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. http://semicon.sanyo.com/en/network
mch6601 no.6458-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit turn-on delay time t d (on) see specified test circuit. 24 ns rise time t r see specified test circuit. 55 ns turn-off delay time t d (off) see specified test circuit. 120 ns fall time t f see specified test circuit. 130 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--100ma 1.43 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--100ma 0.18 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--100ma 0.25 nc diode forward voltage v sd i s =--100ma, v gs =0v --0.83 --1.2 v package dimensions electrical connection unit : mm 7022a-006 switching time test circuit 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 sanyo : mcph6 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 654 123 654 123 pw=10 m s d.c. 1% 0v --4v v in v in p. g 50 w g s i d = --50ma r l =300 w v dd = --15v v out d mch6601 i d -- v ds i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a 0 0 --0.01 --0.02 --0.03 --0.04 --0.06 --0.07 --0.08 --0.09 --0.10 --0.4 --0.05 --0.8 --1.2 --1.6 --2.0 --0.2 --0.6 --1.0 --1.4 --1.8 v gs = --1.5v --3.5v --6.0v --2.0v --4.0v --3.0v --2.5v 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0 --3.5 0 --0.02 --0.04 --0.06 --0.08 --0.10 --0.12 --0.14 --0.16 --0.18 --0.20 v ds = --10v it00077 it00078 ta= --25 c 25 c 75 c 65 4 12 3 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 top view
mch6601 no.6458-3/4 sw time -- i d i s -- v sd diode forward voltage, v sd -- v source current, i s -- a drain current, i d -- a switching time, sw time -- ns --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --0.01 --0.1 5 3 2 7 5 3 2 v gs =0v it00085 --25 c 25 c ta=75 c --0.01 23 57 10 7 5 3 2 7 5 3 2 --0.1 1000 100 it00086 v dd = --15v v gs = --4v t f t r t d (off) t d (on) r ds (on) -- i d r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- w static drain-to-source on-state resistance, r ds (on) -- w gate-to-source voltage, v gs -- v drain current, i d -- a r ds (on) -- ta ? y fs ? -- i d r ds (on) -- i d r ds (on) -- i d static drain-to-source on-state resistance, r ds (on) -- w drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w ambient temperature, ta -- c drain current, i d -- a forward transfer admittance, ? y fs ? -- s --0.01 1.0 --0.1 10 7 5 3 2 100 7 5 3 2 3 2 7 5 3 2 v gs = --2.5v --0.0001 --0.001 1000 7 5 3 2 100 7 5 3 2 10 23 23 57 v gs = --1.5v it00081 it00082 --25 c --25 c 25 c ta=75 c ta=75 c 25 c --0.01 0.01 --0.1 1.0 7 5 3 2 7 5 3 2 0.1 3 2 7 5 3 2 v ds = --10v --60 4 2 --40 6 --20 8 10 0 12 14 20 40 16 60 18 80 100 120 140 160 i d = --30ma, v gs = --2.5v i d = --50ma, v gs = --4.0v it00083 it00084 ta= --25 c 75 c 0 0 -- 1 -- 2 -- 3 5 -- 4 10 -- 5 15 20 25 -- 6 30 --7 --8 --9 --10 ta=25 c --0.01 1.0 --0.1 23 57 23 100 7 5 3 2 10 7 5 3 2 v gs = --4v it00079 it00080 ta=75 c 25 c --25 c i d = --30ma --50ma 25 c
mch6601 no.6458-4/4 ps note on usage : since the mch6601 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. ciss, coss, crss -- v ds v gs -- qg drain-to-source voltage, v ds -- v ciss, coss, crss -- pf total gate charge, qg -- nc gate-to-source voltage, v gs -- v p d -- ta a s o drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c allowable power dissipation, p d -- w 0 0 20 40 0.2 0.4 0.6 0.8 1.0 60 80 100 120 140 160 it01734 23 5 5 723 7 5 3 2 7 5 3 2 --0.01 --0.1 --1.0 --1.0 --10 operation in this area is limited by r ds (on). dc operation i dp = --0.8a i d = --0.2a pw 10 m s 1ms 10ms 100ms it01733 0 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 1.6 0.6 0.8 1.0 1.2 1.4 0.2 0.4 -- 9 --10 v ds = --10v i d = --100ma 0 1.0 -- 5 10 7 5 3 2 7 5 3 2 --10 --15 100 --20 --30 --25 f=1mhz it00087 it00088 ciss coss crss ta=25 c single pulse mounted on a ceramic board (900mm 2 5 0.8mm) 1unit mounted on a ceramic board (900mm 2 5 0.8mm) 1unit specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of april, 2006. specifications and information herein are subject to change without notice.
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