ar c hive inf o rmati o n archive information 1 mrf897 motorola rf device data the rf line designed for 24 volt uhf largeCsignal, common emitter, classCab linear amplifier applications in industrial and commercial fm/am equipment operating in the range 800C970 mhz. ? specified 24 volt, 900 mhz characteristics output power = 30 watts minimum gain = 10 db @ 900 mhz, classCab minimum efficiency = 30% @ 900 mhz, 30 watts (pep) maximum intermodulation distortion C30 dbc @ 30 watts (pep) ? characterized with series equivalent largeCsignal parameters from 800 to 960 mhz ? silicon nitride passivated ? 100% tested for load mismatch stress at all phase angles with 5:1 vswr @ 26 vdc, and rated output power ? gold metalized, emitter ballasted for long life and resistance to metalC migration ? circuit board photomaster available upon request by contacting rf tactical marketing in phoenix, az. maximum ratings rating symbol value unit collectorCemitter voltage v ceo 30 vdc collectorCemitter voltage v ces 60 vdc emitterCbase voltage v ebo 4.0 vdc collectorCcurrent continuous i c 4.0 adc total device dissipation @ t c = 25 c derate above 25 c p d 105 0.60 watts w/ c storage temperature range t stg C65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 1.67 c/w electrical characteristics (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics collectorCemitter breakdown voltage (i c = 50 madc, i b = 0) v (br)ceo 30 33 vdc collectorCemitter breakdown voltage (i c = 50 madc, v be = 0) v (br)ces 60 80 vdc emitterCbase breakdown voltage (i e = 5 madc, i c = 0) v (br)ebo 4.0 4.7 vdc collector cutoff current (v ce = 30 vdc, v be = 0) i ces 10.0 madc on characteristics dc current gain (i ce = 1.0 adc, v ce = 5 vdc) h fe 30 80 120 dynamic characteristics output capacitance (v cb = 24 vdc, i e = 0, f = 1.0 mhz) c ob 14 21 28 pf (continued) order this document by mrf897/d semiconductor technical data 30 w, 900 mhz rf power transistor npn silicon case 395bC01, style 1 ? motorola, inc. 1994 rev 6
ar c hive inf o rmati o n archive information mrf897 2 motorola rf device data electrical characteristics continued (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit functional characteristics commonCemitter amplifier power gain (v cc = 24 vdc, p out = 30 watts (pep), i cq = 125 ma, f 1 = 900 mhz, f 2 = 900.1 mhz) g pe 10.0 12.0 db collector efficiency (v cc = 24 vdc, p out = 30 watts (pep), i cq = 125 ma, f 1 = 900 mhz, f 2 = 900.1 mhz) 35 38 % intermodulation distortion (v cc = 24 vdc, p out = 30 watts (pep), i cq = 125 ma, f 1 = 900 mhz, f 2 = 900.1 mhz) imd C37 C30 dbc output mismatch stress (v cc = 26 vdc, p out = 30 watts (pep), i cq = 125 ma, f 1 = 900 mhz, f 2 = 900.1 mhz, load vswr = 5:1 (all phase angles)) no degradation in output power before and after test figure 1. mrf897 broadband test circuit b1, b2, b3, b4 ferrite bead, fair rite #2743019447 c1 0.8C8.0 pf trimmer capacitor, johanson c2, c3, c23, c24 43 pf, 100 mil, atc chip capacitor c4, c5, c18, c19, c21, c22 820 pf, 100 mil, chip capacitor, kemet c6, c7, c11, c12 10 f, lytic capacitor, panasonic c8, c9, c16, c17 100 pf, 100 mil, chip capacitor, murata erie c10 13 pf, 50 mil, atc chip capacitor c13, c14 250 f lytic capacitor, mallory c15 1.1 pf, 50 mil, atc chip capacitor c20 6.8 pf, 100 mil, atc chip capacitor l1, l2, l3, l4, l5, l6 5 turns 20 awg, idia 0.126 choke n1, n2 type n flange mount, omni spectra 3052C1648C10 q1 bias transistor bd136 pnp r1, r12 39 ohm, 2.0 w r3, r4, r5, r6 4.0 x 39 ohm, 1/8 w, chips in parallel, r3, r4, r5, r6 rohm 390Cj tl1Ctl11 see photomaster balun1, balun2, coax 1, coax 2 2.20 50 ohm, 0.088 o.d. balun1, balun2, coax 1, coax 2 semiCrigid coax, micro coax balun1, balun2, coax 1, coax 2 utC85Cm17 board 1/32 glass teflon, arlon gxC0300C55C22, r = 2.55
ar c hive inf o rmati o n archive information 3 mrf897 motorola rf device data figure 2. output power versus input power figure 3. output power versus frequency figure 4. output power versus supply voltage figure 5. intermodulation versus output power figure 6. power gain versus output power figure 7. broadband test fixture performance
ar c hive inf o rmati o n archive information mrf897 4 motorola rf device data figure 8. series equivalent input/output impedances note: z in & z ol * are given from baseCtoCbase and collectorCtoCcollector respectively.
5 mrf897 motorola rf device data package dimensions case 395bC01 issue a CaC CbC k g d u 2 pl q ! " h j n e c # CtC
mrf897 6 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation o r guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters can and do vary in different applications. all operating parameters, including typicals must be validated for each customer application by customers tec hnical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or auth orized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any othe r application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any clai m of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the desig n or manufacture of the part. motorola and are registered tr ademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. literature distribution centers: usa: motorola literature distribution; p.o. box 20912; phoenix, arizona 85036. europe: motorola ltd.; european literature centre; 88 tanners drive, blakelands, milton keynes, mk14 5bp, england. japan: nippon motorola ltd.; 4-32-1, nishi-gotanda, shinagawa-ku, tokyo 141, japan. asia pacific: motorola semiconductors h.k. ltd.; silicon harbour center, no. 2 dai king street, tai po industrial estate, tai p o, n.t., hong kong. mrf897/d ?
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