inchange semiconductor isc product specification isc silicon npn power transistor BDY79 description continuous collector current-i c = 4a collector power dissipation- : p c = 25w @t c = 25 applications designed for general purpose switching and amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 150 v v cex collector-emitter voltage v be = -1.5v 150 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 7 v i c collector current-continuous 4 a i b b base current-continuous 2 a p c collector power dissipation@t c =25 25 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 7.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BDY79 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = 100ma; i b = 0 120 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 150 v v ce (sat) -1 collector-emitter saturation voltage i c = 0.5a; i b = 50ma 1.0 v v ce (sat) -2 collector-emitter saturation voltage i c = 3a; i b = 1a b 3.0 v v be( on ) base-emitter on voltage i c = 0.5a; v ce = 4v 2.0 v i cex collector cutoff current v ce = 150v; v be = -1.5v v ce = 150v; v be = -1.5v, t c =150 1.0 5.0 ma i ebo emitter cutoff current v eb = 7v; i c = 0 1.0 ma h fe-1 dc current gain i c = 0.5a; v ce = 4v 25 100 h fe-2 dc current gain i c = 3a; v ce = 4v 5 f t current gain-bandwidth product i c = 0.2a; v ce = 10v 8 mhz isc website www.iscsemi.cn 2
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