unisonic technologies co., ltd 2sb649/a pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r204-006,h bipolar power general purpose transistor ? applications * low frequency power amplifier complementary pair with utc 2sd669/a sot-89 to-92nl 1 to-92 1 1 to-252 to-126 1 1 to-126c 1 ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing 2sb649x-x-ab3-r 2sb649xl-x-ab3-r 2sb649xg-x-ab3-r sot-89 b c e tape reel 2sb649x-x-t6c-k 2sb649xl-x-t6c-k 2sb649xg-x-t6c-k to-126c e c b bulk 2sb649x-x-t60-k 2sb649xl-x-t60-k 2sb649xg-x-t60-k to-126 e c b bulk 2sb649x-x-t92-b 2sb649xl-x-t92-b 2sb649xg-x-t92-b to-92 e c b tape box 2sb649x-x-t92-k 2sb649xl-x-t92-k 2sb649xg-x-t92-k to-92 e c b bulk 2SB649X-X-T92-R 2sb649xl-x-t92-r 2sb649xg-x-t92-r to-92 e c b tape reel 2sb649x-x-t9n-b 2sb649xl-x-t9n-b 2sb649xg-x-t9n-b to-92nl e c b tape box 2sb649x-x-t9n-k 2sb649xl-x-t9n-k 2 sb649xg-x-t9n-k to-92nl e c b bulk 2sb649x-x-tn3-r 2sb649xl-x-tn3-r 2sb649xg-x-tn3-r to-252 b c e tape reel
2sb649/a pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r204-006,h ? absolute maximum ratings (ta=25c, unless otherwise specified) parameter symbol rating unit collector-base voltage v cbo -180 v 2sb649 -120 v collector-emitter voltage 2sb649a v ceo -160 v emitter-base voltage v ebo -5 v collector current i c -1.5 a collector peak current l c(peak) -3 a to-126 1 w to-126c 1.3 w to-92/to-92nl 0.6 w sot-89 0.5 w power dissipation to-252 p c 2 w junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit sot-89 38 to-92/ to-92nl 80 to-126 6.25 to-126c 10 junction to case to-252 jc 4.5 c/w ? electrical characteristics (ta=25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector to base breakdown voltage bv cbo i c =-1ma, i e =0 -180 v 2sb649 -120 collector to emitter breakdown voltage 2sb649a bv ceo i c =-10ma, r be = -160 v emitter to base breakdown voltage bv ebo i e =-1ma, i c =0 -5 v collector cut-off current i cbo v cb =-160v, i e =0 -10 a h fe1 v ce =-5v, i c =-150ma (note) 60 320 2sb649 h fe2 v ce =-5v, i c =-500ma (note) 30 h fe1 v ce =-5v, i c =-150ma (note) 60 200 dc current gain 2sb649a h fe2 v ce =-5v, i c =-500ma (note) 30 collector-emitter satu ration voltage v ce(sat) i c =-600ma, i b =-50ma -1 v base-emitter voltage v be v ce =-5v, i c =-150ma -1.5 v current gain bandwidth product f t v ce =-5v,i c =-150ma 140 mhz output capacitance cob v cb =-10v, i e =0, f=1mhz 27 pf note: pulse test. ? classification of h fe1 rank range b c d 2sb649 60-120 100-200 160-320 2sb649a 60-120 100-200 -
2sb649/a pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r204-006,h ? typical characteristics i b =0 -0.5ma -1.0 -1.5 -2.0 - 2 . 5 - 3 . 0 - 3 . 5 - 4 . 0 - 5.5 - 5 . 0 - 4 . 5 t c =25 p d =20w 0 -10 -20 -30 -40 -50 0.2 0.4 0.6 0.8 1.0 typical output characteristecs collector to emitter voltage, v ce (v) collector current, i c (a) base to emitte r voltage, v be (v) 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1 -10 -100 -500 v ce =-5v t a = 7 5 2 5 - 2 5 typical transfer characteristics collector current, i c (ma) 2 5 - 2 5 1 50 100 150 200 250 300 -1 -10 -100 -1,000 collector current, i c (ma) dc current transfer ratio, h fe dc current transfer ratio vs. collector current collector to emitter saturation voltage vs. collector current -1 -10 -100 -1,000 collector current, i c (ma) 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 collector to emitter saturation voltage, v ce(sat) (v) t c = 7 5 i c =10 i b 2 5 -25 350 v ce =-5v t a = 7 5 t c = - 2 5 i c =10i b 2 5 7 5 -1 -3 -10 -30 -100 -300 -1000 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 collector current, i c (ma) base to emitter saturation voltage vs. collector current base to emitter sa turation voltage, v be(sat) (v) -10 -30 -100 -300 -1000 collector current, i c (ma) 0 -40 -80 -120 -160 -200 -240 gain bandwidth product, f t (mhz) gain bandwidth product vs. collector current v ce =5v ta=25
2sb649/a pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r204-006,h ? typical characteristics(cont.) collector output capacitance, c ob (pf) collector current, i c (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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