 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| savantic semiconductor product specification silicon pnp power transistors tip34/34a/34b/34c description with to-3pn package complement to type tip33/33a/33b/33c dc current gain h fe =40(min)@i c =1.0a applications designed for use in general purpose power amplifier and switching applications. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(t c =25) symbol parameter conditions value unit tip34 -40 tip34a -60 tip34b -80 v cbo collector-base voltage TIP34C open emitter -100 v tip34 -40 tip34a -60 tip34b -80 v ceo collector-emitter voltage TIP34C open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i cm collector current-peak -15 a i b base current -3 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.56 /w fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors tip34/34a/34b/34c characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit tip34 -40 tip34a -60 tip34b -80 v ceo(sus) collector-emitter sustaining voltage TIP34C i c =-30ma ;i b =0 -100 v v ce (sat) -1 collector-emitter saturation voltage i c =-3a ;i b =-0.3a -1.0 v v ce ( sat) -2 collector-emitter saturation voltage i c =-10a; i b =-2.5a -4.0 v v be-1 base-emitter on voltage i c =-3a ; v ce =-4v -1.6 v v be-2 base-emitter on voltage i c =-10a ; v ce =-4v -3.0 v tip34/34a v ce =-30v; i b =0 i ceo collector cut-off current tip34b/34c v ce =-60v; i b =0 -0.7 ma tip34 v ce =-40v;v eb =0 tip34a v ce =-60v;v eb =0 tip34b v ce =-80v;v eb =0 i ces collector cut-off current TIP34C v ce =-100v;v eb =0 -0.4 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-1a ; v ce =-4v 40 h fe-2 dc current gain i c =-3a ; v ce =-4v 20 100 f t transition frequency i c =-0.5a ; v ce =-10v;f=1mhz 3.0 mhz savantic semiconductor product specification 3 silicon pnp power transistors tip34/34a/34b/34c package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
Price & Availability of TIP34C
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |