1 motorola tmos power mosfet transistor device data
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nchannel enhancementmode silicon gate this advanced tmos efet is designed to withstand high energy in the avalanche and commutation modes. the new energy efficient design also offers a draintosource diode with a fast recovery time. designed for low voltage, high speed switching applications in power supplies, converters and pwm motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ? avalanche energy specified ? sourcetodrain diode recovery time comparable to a discrete fast recovery diode ? diode is characterized for use in bridge circuits ? i dss and v ds(on) specified at elevated temperature maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 150 vdc draintogate voltage (r gs = 1.0 m w ) v dgr 150 vdc gatetosource voltage e continuous gatetosource voltage e nonrepetitive (t p 10 ms) v gs v gsm 20 40 vdc vpk drain current e continuous drain current e continuous @ 100 c drain current e single pulse (t p 10 m s) i d i d i dm 29 19 102 adc apk total power dissipation derate above 25 c p d 125 1.0 watts w/ c operating and storage temperature range t j , t stg 55 to 150 c single pulse draintosource avalanche energy e starting t j = 25 c (v dd = 25 vdc, v gs = 10 vdc, peak i l = 29 apk, l = 1.0 mh, r g = 25 ) e as 421 mj thermal resistance e junction to case thermal resistance e junction to ambient r q jc r q ja 1.0 62.5 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c efet is a trademark of motorola, inc. tmos is a registered trademark of motorola, inc. this document contains information on a product under development. motorola reserves the right to change or discontinue this product without notice. order this document by MTP29N15E/d semiconductor technical data
tmos power fet 29 amperes 150 volts r ds(on) = 0.07 ohm ? d s g nchannel case 221a06, to220ab ? motorola, inc. 1997
2 motorola tmos power mosfet transistor device data electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (v gs = 0 vdc, i d = 0.25 madc) temperature coefficient (positive) v (br)dss 150 e e tbd e e vdc mv/ c zero gate voltage drain current (v ds = 150 vdc, v gs = 0 vdc) (v ds = 150 vdc, v gs = 0 vdc, t j =125 c) i dss e e e e 10 100 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss e e 100 nadc on characteristics (1) gate threshold voltage (v ds = v gs , i d = 250 m adc) threshold temperature coefficient (negative) v gs(th) 2.0 e 2.7 tbd 4.0 e vdc mv/ c static draintosource onresistance (v gs = 10 vdc, i d = 14.5 adc) r ds(on) e 0.055 0.07 ohms draintosource onvoltage (v gs = 10 vdc, i d = 29 adc) (v gs = 10 vdc, i d = 14.5 adc, t j = 125 c) v ds(on) e e e e 2.4 2.1 vdc forward transconductance (v ds = 8.6 vdc, i d = 14.5 adc) g fs 10 18 e mhos dynamic characteristics input capacitance (v 25 vdc v 0 vdc c iss e 2250 3150 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss e 455 910 transfer capacitance f = 1 . 0 mhz) c rss e 133 190 switching characteristics (2) turnon delay time (v 75 vd i 29 ad t d(on) e 17.5 40 ns rise time (v dd = 75 vdc, i d = 29 adc, v gs =10vdc t r e 108 220 turnoff delay time v gs = 10 vd c, r g = 9.1 w ) t d(off) e 90 180 fall time g ) t f e 85 170 gate charge (v 120 vd i 29 ad q t e 78 110 nc (v ds = 120 vdc, i d = 29 adc, q 1 e 12 e ( ds , d , v gs = 10 vdc) q 2 e 37 e q 3 e 23 e sourcedrain diode characteristics forward onvoltage (i s = 29 adc, v gs = 0 vdc) (i s = 29 adc, v gs = 0 vdc, t j = 125 c) v sd e e 0.92 tbd 1.3 e vdc reverse recovery time (i 29 ad v 0 vd t rr e 174 e ns (i s = 29 adc, v gs = 0 vdc, t a e 140 e ( s , gs , di s /dt = 100 a/ m s) t b e 34 e reverse recovery stored charge q rr e 1.4 e m c internal package inductance internal drain inductance (measured from contact screw on tab to center of die) (measured from the drain lead 0.25 from package to center of die) l d e e 3.5 4.5 e e nh internal source inductance (measured from the source lead 0.25 from package to source bond pad) l s e 7.5 e (1) pulse test: pulse width 300 m s, duty cycle 2%. (2) switching characteristics are independent of operating junction temperature.
3 motorola tmos power mosfet transistor device data package dimensions case 221a06 issue y notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 1.15 z 0.080 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j
4 motorola tmos power mosfet transistor device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 4321, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 nishigotanda, shinagawaku, tokyo 141, japan. 81354878488 customer focus center: 18005216274 mfax ? : rmfax0@email.sps.mot.com touchtone 1 6022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, motorola fax back system us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 http://sps.motorola.com/mfax/ home page : http://motorola.com/sps/ MTP29N15E/d ?
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