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triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-products@tqs.com TGA2501-TS 1 november 2011 ? rev b 6 - 18 ghz 2.8 watt power amplifier key features and performance ? 34.5 dbm midband pout ? 24 db nominal gain ? 10 db typical input return loss ? 5 db typical output return loss ? bias conditions: 8 v @ 1.2 a ? 0.25 m ku phemt 2mi ? thermal spreader dimensions: 4.445 x 3.023 mm primary applications ? x-ku point-to-point ? eccm preliminary measured performance bias conditions: v d = 8 v i d = 1.2 a product description triquint?s TGA2501-TS is a wideband power amplifier fabricated on triquint?s production- released 0.25um power phemt process. operating from 6 to 18ghz, it achieves 34.5dbm of saturated output power, 25% efficiency and 24db of small signal gain. the TGA2501-TS is pre-assembled to a cumo carrier (or thermal spreader) for improved thermal management and ease of handling. using ausn solder and a vacuum reflow process, attachment is made with minimal voiding and screened via x-ray to ensure acceptable attach. fully matched to 50 ohms, rohs compliant and with integrated dc blocking caps on both i/o ports, the TGA2501-TS is ideally suited to support both commercial and defense related opportunities. the TGA2501-TS is 100% dc and rf tested on-wafer to ensure compliance to performance specifications. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-products@tqs.com TGA2501-TS 2 november 2011 ? rev b table i absolute maximum ratings 1 / symbol parameter value notes v + positive supply voltage 9 v v - negative supply voltage range -5 v to 0 v i + positive supply current (quiescent) 2.0 a | i g | gate supply current 52 ma p in input continuous wave power 26 dbm p d power dissipation 18.0 w tchannel channel temperature 200 c 2 / mounting temperature (30 seconds) 320 c storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device and/or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2 / junction operating temperature will directly affect the device median lifetime (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-products@tqs.com TGA2501-TS 3 november 2011 ? rev b table ii thermal information parameter test condition tchannel ( c) jc ( c/w) tm (hrs) jc thermal resistance (channel to backside) v d = 8 v i d = 1.2 a p dis = 9.6 w 144.56 7.77 1.6e+6 note: assumes eutectic attach using 1.5mil 80/20 ausn mounted to a 20mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-products@tqs.com TGA2501-TS 4 november 2011 ? rev b table iii dc probe test (ta = 25 c, nominal) limits notes symbol min max units 1 / i dss(q1) 120 564 ma 1 / g m (q1) 264 636 ms 1 /, 2 / |v p | 0.5 1.5 v 1 /, 2 / |v bvgs | 13 30 v 1 /, 2 / |v bvgd | 13 30 v 1 / q1 is a 1200 m fet 2 / v p , v bvgd , and v bvgs are negative. table iv rf characterization table (t a = 25 c, nominal) (vd = 8 v, idq = 1.2 a 5%) symbol parameter test condition min typical units gain small signal gain f = 6-11 ghz f = 12-18 ghz 22 20 25 24 db irl input return loss f = 6-18 ghz 10 db orl output return loss f = 6-18 ghz 5 db pae power added efficiency f = 6-18 ghz 25 % pwr output power @ pin=+15dbm f = 6-8 ghz f = 9-17 ghz f = 18 ghz 29.5 32.5 31.5 34.0 34.5 33.5 dbm note: minimum specifications ar e based on rf wafer probe measurements www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-products@tqs.com TGA2501-TS 5 november 2011 ? rev b fixtured performance www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-products@tqs.com TGA2501-TS 6 november 2011 ? rev b fixtured performance www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-products@tqs.com TGA2501-TS 7 november 2011 ? rev b fixtured performance www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-products@tqs.com TGA2501-TS 8 november 2011 ? rev b fixtured performance www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-products@tqs.com TGA2501-TS 9 november 2011 ? rev b mechanical drawing tga2501 mmic only gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-products@tqs.com TGA2501-TS 10 november 2011 ? rev b mechanical drawing tga2501 on thermal spreader notes: 1. dimensions are in mm[inches]. 2. dimension limits apply after plating. 3. dimension of surface roughness is in micrometers(microinches). 4. material: cu13/mo74/cu13. 5. plating: electrolytic gold (au) 2.5 um minimum per mil-g45204 over electrolytic nickel (ni) 2.5-7.5 um per qq-n-290 6. mmic is attached to thermal spreader using ausn solder. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-products@tqs.com TGA2501-TS 11 november 2011 ? rev b chip assembly & bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. 1uf or larger capacitors (not show n) should be on the gate and drain line. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-products@tqs.com TGA2501-TS 12 november 2011 ? rev b alternative chip assembly & bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. 1uf or larger capacitors (not show n) should be on the gate and drain line. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-products@tqs.com TGA2501-TS 13 november 2011 ? rev b assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. component storage placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? attachment of the thermal spreader should use an epoxy with high thermal conductivity. ? curing should be done in a convection oven. ? microwave or radiant curing should not be used because of differential heating. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage termperature is 200 c. ordering information part package style TGA2501-TS gaas mmic die on thermal spreader www.datasheet.net/ datasheet pdf - http://www..co.kr/

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