tisp4c115h3bj thru tisp4c350h3bj low capacitance bidirectional thyristor overvoltage protectors tisp4cxxxh3bj overvoltage protector series september 2004 ?revised january 2010 *rohs directive 2002/95/ec jan 27 2003 including annex. speci cations are subject to change without notice. customers should verify actual device performance in their speci c applications. *rohs compliant ion-implanted breakdown region - precise and stable voltage - low voltage overshoot under surge - low off-state capacitance description rated for international surge wave shapes wave shape standard i ppsm a 2/10 gr-1089-core 500 10/160 tia-968-a 200 10/700 itu-t k.20/21/45 150 10/560 tia-968-a 100 10/1000 gr-1089-core 100 this device is designed to limit overvoltages on the telephone line. overvoltages are normally caused by a.c. power system or l ightning ash disturbances which are induced or conducted on to the telephone line. a single device provides 2-point protection and is typica lly used for the protection of 2-wire telecommunication equipment (e.g. between the ring and tip wires for telephones and modems). combinati ons of devices can be used for multi-point protection (e.g. 3-point protection between ring, tip and ground). the protector consists of a symmetrical voltage-triggered bidirectional thyristor. overvoltages are initially clipped by breakd own clamping un- til the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. this low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. the high crowbar holding current helps prevent d.c. latchup as t he diverted current subsides. please contact your bourns representative if the protection voltage you require is not listed. how to order device package carrier marking code std. qty. tisp4cxxxh3bj smb embossed tape reeled tisp4cxxxh3bjr-s 4cxxxh 3000 insert xxx correspondin g to device name. order as smb package (top view) md-smb-004-a r1 2t device symbol t r sd-tisp4xxx-001-a ...................................................... ul recognized component device name v drm v v (bo) v tisp4c290h3bj ? 220 290 tisp4c350h3bj ? 275 350 tisp4c145h3bj ? 120 145 tisp4c125h3bj ? 100 125 tisp4c180h3bj ? 145 180 tisp4c165h3bj 135 165 tisp4c220h3bj ? 180 220 tisp4c250h3bj ? 190 250 tisp4c115h3bj ? 90 115
rating symbol value unit repetitive peak off-state voltage '4c290h3bj '4c350h3bj v drm 220 275 '4c145h3bj '4c180h3bj 120 '4c165h3bj 135 145 '4c250h3bj 190 '4c125h3bj '4c220h3bj 100 '4c115h3bj 90 180 v non-repetitive peak impulse current (see notes 1 and 2) 2/10 s (gr-1089-core, 2/10 s voltage wave shape) 10/160 s (tia-968-a, 10/160 s voltage wave shape) 5/310 s (itu-t k.44, 10/700 s voltage wave shape used in k.20/21/45) 10/560 s (tia-968-a, 10/560 s voltage wave shape) 10/1000 s (gr-1089-core, 10/1000 s voltage wave shape) i ppsm 500 200 150 100 100 a non-repetitive peak on-state current (see notes 1, 2 and 3) i tsm 30 2.1 a 20 ms, 50 hz (full sine wave) 1000 s, 50 hz junction temperature t j -40 to +150 c storage temperature range t stg -65 to +150 c notes: 1. initially the device must be in thermal equilibrium with t j = 25 c. 2. the surge may be repeated after the device returns to its initial conditions. 3. eia/jesd51-2 environment and eia/jesd51-3 pcb with standard footprint dimensions connected with 5 a rated printed wiring track widths. september 2004 ?revised january 2010 speci cations are subject to change without notice. customers should verify actual device performance in their speci c applications. tisp4cxxxh3bj overvoltage protector series absolute maximum ratings, t a = 25 c (unless otherwise noted) electrical characteristics, t a = 25 c (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off-state current v d = v drm t a = 25 c t a = 85 c 5 10 a v (bo) breakover voltage dv/dt = 250 v/ms, r source = 300 '4c290h3bj '4c350h3bj 290 350 '4c145h3bj '4c180h3bj 145 '4c165h3bj 165 180 '4c250h3bj 250 '4c125h3bj '4c220h3bj 125 '4c115h3bj 115 220 v v (bo) impulse breakover voltage dv/dt 1000 v/ s, linear voltage ramp, maximum ramp value = 500 v di/dt = 10 a/ s, linear current ramp, maximum ramp value = 10 a '4c290h3bj '4c350h3bj 300 360 '4c145h3bj '4c180h3bj '4c290h3bj '4c350h3bj '4c220h3bj '4c250h3bj 155 '4c165h3bj 175 190 '4c250h3bj 260 '4c125h3bj '4c220h3bj 135 '4c115h3bj 125 230 v i (bo) breakover current dv/dt = 250 v/ms, r source = 300 ? 600 ma v t on-state voltage i t = 5a, t w = 100 s 3v i h holding current i t = 5 a, di/dt = 30 ma/ms 150 600 ma c o off-state capacitance f = 1 mhz, v d = 1 v rms, v d = -2 v 40 '4c125h3bj '4c115h3bj 50 '4c145h3bj '4c165h3bj '4c180h3bj 45 pf
september 2004 ?revised january 2010 speci cations are subject to change without notice. customers should verify actual device performance in their speci c applications. tisp4cxxxh3bj overvoltage protector series thermal characteristics, t a = 25 c (unless otherwise noted) parameter test conditions min typ max unit r ja junction to ambient thermal resistance eia/jesd51-3 pcb, i t = i tsm(1000) (see note 4) 113 c/w 265 mm x 210 mm populated line card, 4-layer pcb, i t = i tsm(1000) 50 note: 4. eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths. parameter measurement information -v i (br) v (br) v (br)m v drm i drm v d i h i t v t i trm i ppsm v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) i (br) v (br) v (br)m v drm i drm v d i d i h i t v t i trm i ppsm -i quadrant iii switching characteristic i tsm i tsm figure 1. voltage-current characteristic for t and r terminals all measurements are referenced to the r terminal pm-tisp4xxx-001-a
tisp4xxxf3lm overvoltage protector series tisp4cxxxh3bj overvoltage protector series typical characteristics normalized capacitance vs off-state voltage v d - off-state voltage - v 110100 capacitance normalized to v d = 2 v 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 t j = 25 c v d = 1 vrms tc-tisp4c-002-a ?tisp? is a trademark of bourns, ltd., a bourns company, and is registered in the u.s. patent and trademark of? ce. ?bourns? is a registered trademark of bourns, inc. in the u.s. and other countries. september 2004 - revised january 2010 speci cations are subject to change without notice. customers should verify actual device performance in their speci c applications.
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