:? :?:? :?:::?:?:?:?:?:?:?:?:a @?:?:?:?:?::?:?:w:?:?::o:::?:?::?:? @?:?:?:?:?:::?: @?::?:?::?::?:w:?:1::?:?::?:?:w::?:?::?:?: @?:?:?:?::?:?:?:w:o:?:?::?:o:?:?::::?::o: @?:::?:w:o:?:?:?::?:::?:?::?:?:w ::?::?:?:?:?:?: :a:e:?:1:?:? :?:e:?:? ::?:?:? :?:?::? ::?:?:? ::?:?::?::?:w:::?:o:?::?:?:?:?:?:?:?:?:1::?:?:? :a:?:?:?:?:e:?::?:?:?:? :? :? :?:? :?:::?:?:?:?:?:?:?:?:a :a::?:?:?:?:w::?:o:?:?:?:?:?:?:w::|:a:?:?:? @?:?:?:?:o:?:::o:?:?:w:o:?:?::?:o:?:?::::?::o: :?:?:?:?:?=? ::?::?:?:?:?:?: :a:e:?:1:?:? :?:?:?:?::?::?:? :::?:? :?:e:?:? ::?:?:? :?:?::? ::?:?:? :a:?:?:?:?:?:w::?:?:?::?:?:?:?:a :?::?::?:?::?:::o:?:w:1::?:?:a:?:?:?:?:w::?:?:?:?:?:? :?:-:?:: :?:?:?:?:?:? :?:? :?:?:?:?:?:?:?:?? :w:?:?:?? :w:?:|:?:w:w :?:?:w:?:?:?:?:?:?:?:?:?:?:?:w:?:?:w:?:?:?::?:?::?:?:w:?:?:?:?:?::?:?:::?:? :?:?:w:::?::?:?:w:?::?:?:?:w:?::?::?:?:?:w:1:e:w:?:?:?::?::?:w:::?:o:?::?:?:w:?:?:?:?:?::?:?:::?:? :?:?:w:?::?:e:w:o:e:o:?:?:w >? :w:?:|:?
:? :?:? @?:?:e:?::o:?:?:w:?:?:?:o:?:::o:?:?:w:?:?:?:w:?:?:?::?:?:?:w:o:?:?::?:o:?:?::::?::o: 20 16 12 8 4 0 0 v gs = 4.5v 3.0v 2.5v 2.0v 1.5v v gs , drain to source voltage(v) i d , drain current(a) 0.5 2 1.5 3 2.5 on-region characteristics. 1 0.1 0.08 0.04 0.06 0.02 0 02345 v gs , gate to source voltage(v) on-resistance variation with gate-to-source voltage. i d =2.5a t a = 125 c t a = 25 c r ds(on) , on-resistance( ) 0 2 8 12 16 20 3 2.5 2 1.5 1 0.5 v gs , gate to source voltage(v) i d , drain current(a) v ds = 5v t a = -55c 125 c 25 c transfer characteristics. 10 1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 body diode forword voltage variation with source current and temperature. i s , reverse drain current (a) v gs = 0v t a = 125 c 25 c -55 c 0.1 100 v sd , body diode forward voltage(v) 0.8 1.2 1 1.6 1.4 0.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature( c) r ds(on) , normalized drain-source on-resistance on-resistance variation with temperature. v gs = 4.5v i d = 5a 2 1.8 1.6 1.4 1.2 1 0.8 04 8 121620 v gs = 2.0v 2.5v 3.0v 3.5v 4.0v 4.5v i d , drain current(a) on-resistance variation with drain current and gate voltage. r ds(on) , normalized drain-source on-resistance :?:::?:?:?:?:?:?:?:?:a :a::?:?:?:?:w::?:o:?:?:?:?:?:?:w::|:a:?:?:?
:? :?:? 5 4 3 2 1 0 0246810 10v v ds = 5v i d = 5a q g gate charge (nc) gate-charge characteristics v gs, gate-saurce voltage(v) 1100 300 100 0 04 20 capacitance(pf) c rss c oss c iss capacitance characteristics 500 700 900 81216 f =1mhz v gs =0 v v ds, drain to source voltage(v) maxmum safe operating area. i d ,drain current(a) v gs =4.5v single pulse r e ja =100c/w ta=25 c 100 10 1 0.1 0.01 100 10 1 0.1 v gs ,drain-source voltage(v) 1s 10s 100ms 10ms dc 1ms r ds(on) limit single pulse time(sec) power (w) single puise maximum power dissipation. single pulse r e ja =100 c/w ta=25 c 20 15 12 8 4 0 1000 100 10 1 0.1 0.01 0.001 0.0001 r e ja (t) = r(t) * r ey? r e ja =100 c/w duty cycle, d= t 1 / t 2 t j -t a =p*r e ja (t) t2 t1 p(pk) transisent thermal response curve. time(sec) r(t), normalized effective transient thermal resistance 0.1 0.2 d=0.5 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 300 100 10 1 0.1 0.01 0.001 0.0001 0.001 0.02 0.01 single pulse 0.05 :?:::?:?:?:?:?:?:?:?:a :a::?:?:?:?:w::?:o:?:?:?:?:?:?:w::|:a:?:?:?
|