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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD582 description collector-emitter breakdown voltage- : v (br)ceo = 140v(min.) collector-emitter saturation voltage- : v ce(sat) = 1.5v(max.)@ i c = 7a complement to type 2sb612 applications designed for 80~100w audio amplifier power output applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 180 v v ceo collector-emitter voltage 140 v v ebo emitter-base voltage 6 v i c collector current-continuous 12 a i cm collector current-peak 15 a i b b base current-continuous 2 a p c collector power dissipation @t c =25 100 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD582 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; r be = 140 v v (br)ebo emitter-base breakdown voltage i e = 5ma; i c = 0 6 v v ce (sat) collector-emitter saturation voltage i c = 7a; i b = 0.7a b 1.5 v v be (on) base-emitter on voltage i c = 1a; v ce = 5v 1.5 v i cbo collector cutoff current v cb = 160v; i e = 0 10 a h fe-1 dc current gain i c = 1a; v ce = 5v 35 200 h fe-2 dc current gain i c = 7a; v ce = 5v 20 ? h fe- 1 classifications a b c 35-70 60-120 100-200 isc website www.iscsemi.cn |
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