 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| r08ds0014ej0001 rev.0.01 page 1 of 15 may 09, 2011 preliminary data sheet specifications in this document ar e tentative and subject to change. ps9402 2.5 a output current, high cmr, igbt, power mos fet gate drive, 16-pin ssop photocoupler description the ps9402 is an optically coupled isolator containing a gaalas led on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip. the ps9402 is designed specifically for high common mode transient immunity (cmr), high output current and high switching speed. the ps9402 includes desaturation detection and active miller clamping functions. the ps9402 is suitable for driving igbts and power mos fets. the ps9402 is in a 16-pin plastic ssop (s hrink s mall o utline p ackage). and the ps9402 is able to high-density (surface) mounting. features ? long creepage distance (8 mm min.) ? large peak output current (2.5 a max., 2.0 a min.) ? high speed switching (t plh , t phl = 200 ns max.) ? uvlo (u nder v oltage l ock o ut) protection with hysteresis ? desaturation detection ? miller clamping ? high common mode transient immunity (cm h , cm l = 25 kv/ s min.) ? embossed tape product: ps9402-e3: 850 pcs/reel ? pb-free product ? safety standards ? ul awaiting approval ? csa awaiting approval ? din en60747-5-2 (vde0884 pa rt2) awaiting approval applications ? igbt, power mos fet gate driver ? industrial inverter ? uninterruptible power supply (ups) r08ds0014ej0001 rev.0.01 may 09, 2011 v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee pin connection (top view) 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9
preliminary document specifications in this document are tentative and subject to change. ps9402 chapter title r08ds0014ej0001 rev.0.01 page 2 of 15 may 09, 2011 package dimensions (unit: mm) 0.20.15 10.360.4 0.64 min. 7.49 +0.5 ?0.1 3.50.2 0.710.3 10.310.5 1.27 0.46 0.1 0.25 m photocoupler construction parameter unit (min.) air distance 8 mm outer creepage distance 8 mm isolation distance 0.4 mm preliminary document specifications in this document are tentative and subject to change. ps9402 chapter title r08ds0014ej0001 rev.0.01 page 3 of 15 may 09, 2011 block diagram(unit: mm) uvlo desat shield shield clamp v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee if uvlo (v cc2 ? v ee ) desat fault v o don?t care active ( preliminary document specifications in this document are tentative and subject to change. ps9402 chapter title r08ds0014ej0001 rev.0.01 page 5 of 15 may 09, 2011 absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit forward current i f 25 ma peak transient forward current (pulse width < 1 s) i f (tran) 1.0 a reverse voltage v r 5 v input supply voltage v cc 1 0 to 5.5 v input ic power dissipation *1 p i 80 mw high level peak output current *2 i oh (peak) 2.5 a low level peak output current *2 i ol (peak) 2.5 a fault output current i fault 8 ma fault pin voltage v fault 0 to v cc 1 v total output supply voltage (v cc 2 ? v ee ) 0 to 33 v negative output supply voltage (v e ? v ee ) 0 to 15 v output voltage v o 0 to v cc 2 v peak clamping sinking current i clamp 1.7 a miller clamping pin voltage v clamp 0 to v cc 2 v desat voltage v desat v e to v e +10 v output ic power dissipation *3 p o 300 mw isolation voltage *4 bv 5 000 vr.m.s. operating ambient temperature t a ? 40 to +110 c storage temperature t stg ? 55 to +125 c notes: *1. reduced to 1.6 mw/ c at t a = 75 c or more. *2. maximum pulse width = 10 s, maximum duty cycle = 0.5% *3. reduced to 5.5 mw/ c at t a = 70 c or more. *4. ac voltage for 1 minute at t a = 25 c, rh = 60% between input and output. pins 1-8 shorted together, 9-16 shorted together. recommended operating conditions parameter symbol min. max. unit total output supply voltage (v cc 2 ? v ee ) 15 30 v negative output supply voltage (v e ? v ee ) 0 15 v positive output supply voltage (v cc 2 ? v e ) 15 30 ? (v e ? v ee ) v forward current (on) i f (on) 8 12 ma forward voltage (off) v f (off) ? 2 0.8 v operating ambient temperature t a ? 40 110 c preliminary document specifications in this document are tentative and subject to change. ps9402 chapter title r08ds0014ej0001 rev.0.01 page 6 of 15 may 09, 2011 electrical characteristics (dc) (a t recommended operating conditions, v ee = v e = gnd, unless otherwise specified) parameter symbol conditions min. typ. *1 max. unit fault logic low output voltage v faultl i fault = 1.1 ma 0.1 v fault logic high output current i faulth v fault = 5.5 v, v cc 1 = 5.5 v, t a = 25 c 0.5 a high level output current i oh v o = (v cc ? 4 v) *2 0.5 1.5 a v o = (v cc ? 15 v) *3 2.0 low level output current i ol v o = (v ee +2.5 v) *2 0.5 1.5 a v o = (v ee +15 v) *3 2.0 low level output current during fault condition i olf v o ?v ee = 14 v 90 140 230 ma high level output voltage v oh i o = 100 ma *4 v cc ? 2.0 v cc ? 1.3 v i o = ? 650 a *4 v cc ? 1.5 v cc ? 0.8 low level output voltage v ol i o = 100 ma 0.15 0.5 v clamp pin threshold voltage v tclamp 2.0 v clamp low level sinking current i cl v tclamp = v ee + 2.5v 0.35 1.5 a high level supply current i cc 2 h i o = 0 ma 2 3 ma low level supply current i cc 2 l i o = 0 ma 2 3 ma blanking capacitor charging current i chg v desat = 2 v 0.13 0.24 0.33 ma blanking capacitor discharging current i dschg v desat = 7 v 10 30 ma desat threshold v desat v cc 1 ? v e > v uvlo ? , v o < 5v 6.0 6.9 7.5 v uvlo threshold *5 v uvlo+ v o > 5 v 11.0 12.3 13.5 v v uvlo ? v o < 5 v 9.8 11.0 12.3 uvlo hysteresis v uvlo + ? v uvlo ? 0.4 1.3 v threshold input current (l h) i flh i o = 0 ma, v o > 5 v 1.5 5 ma threshold input voltage (h l) v fhl i o = 0 ma, v o < 5 v 0.8 v input forward voltage v f i f = 10 ma, t a = 25 c 1.2 1.56 1.8 v input reverse current i r v r = 3v, t a = 25 c 10 a input capacitance c in f = 1 mhz, v f = 0 v 30 pf notes: *1. typical values at t a = 25 c. *2. maximum pulse width = 50 s, maximum duty cycle = 0.2% *3. maximum pulse width = 10 s, maximum duty cycle = 0.5% *4. v oh is measured with the dc load current in this test ing (maximum pulse width = 1 ms, maximum duty cycle = 20%). *5. for high level output voltage testing, v oh is measured with the dc load current. when driving capacitive loads, v oh will approach v cc as i oh approaches zero units. preliminary document specifications in this document are tentative and subject to change. ps9402 chapter title r08ds0014ej0001 rev.0.01 page 7 of 15 may 09, 2011 switching characteristics (ac) (at recommended operating conditions, v ee = v e = gnd, unless othe rwise specified) parameter symbol conditions min. typ. *1 max. unit propagation delay time (l h) t plh r g = 10 , c g = 10 nf, 50 100 200 ns propagation delay time (h l) t phl f = 10 khz, 50 100 200 ns pulse width distortion (pwd) |t phl ? t plh | duty cycle = 50% *2 , 20 100 ns rise time t r i f = 10 ma, 50 ns fall time t f v cc 2 = 30 v 50 ns common mode transient immunity at high level output *3 cm h 1 t a = 25 c, i f = 10 ma, v cc 2 = 30 v, v cm = 1.5 kv, c desat = 100 pf, r f = 2.1 k , v cc 1 = 5 v 25 kv/ s common mode transient immunity at low level output *4 cm l 1 t a = 25 c, v f = 0 v, v cc 2 = 30 v, v cm = 1.5 kv, r f = 2.1 k , v cc 1 = 5 v ? 25 kv/ s desat sense to 90% v o delay *5 t desat (90%) c desat = 100 pf, r f = 2.1 k , 250 500 ns desat sense to 10% v o delay t desat (10%) r g = 10 , c g = 10 nf v cc 2 = 30 v 2 3 s desat sense to low level fault signal delay *6 t desat (fault) 400 800 ns desat sense to desat low propagation delay *5 t desat (low) 250 ns desat input mute *7 t desat (mute) 5 s reset to high level fault v cc 1 = 5.5 v 0.3 1.2 3.0 s signal delay t reset (fault) v cc 1 = 3.3 v 0.5 1.5 4.0 s notes: *1. typical values at t a = 25 c. *2. this load condition is equivale nt to the igbt load at 1 200 v/150 a. *3. common mode transient immunity in the high state is the maximum tolerable dv cm /dt of the common mode pulse, v cm , to assure that the output will remain in the high state (i.e., v o > 15 v or fault > 2 v). a 100 pf and a 2.1k ? pull-up resistor is needed in fault detection mode. *4. common mode transient immunity in the low state is the maximum tolerable dv cm /dt of the common mode pulse, v cm , to assure that the output will remain in a low state (i.e., v o < 1.0 v or fault < 0.8 v). *5. this is the amount of time the desat threshold must be exceeded before v out begins to go low, and the fault output to go low. this is supply voltage dependent. *6. this is the amount of time from when the desat threshold is exceeded, until the fault output goes low. *7. auto reset: this is t he amount of time when v out will be asserted low after desat threshold is exceeded. see the description of operation (auto reset) t opic in the application information section. preliminary document specifications in this document are tentative and subject to change. ps9402 chapter title r08ds0014ej0001 rev.0.01 page 8 of 15 may 09, 2011 test circuit fig. 1 v faultl test circuit fig. 3 i oh test circuit fig. 5 v oh test circuit fig. 6 v ol test circuit fig. 4 i ol test circuit fig. 2 i faulth test circuit v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v faultl i f i f v oh v cc i oh v cc v ol v cc v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 i faulth i ol v cc preliminary document specifications in this document are tentative and subject to change. ps9402 chapter title r08ds0014ej0001 rev.0.01 page 9 of 15 may 09, 2011 test circuit 2 fig. 7 i cc2h test circuit fig. 9 i chg test circuit fig. 11 i cl test circuit fig. 12 v desat test circuit fig. 10 i dschg test circuit fig. 8 i cc2l test circuit v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 i f i f i cl v cc v cc v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 i f v cc i cc2h v cc i cc2l i chg 2 v v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v cc i dschg 7 v v cc 2.5 v v desat preliminary document specifications in this document are tentative and subject to change. ps9402 chapter title r08ds0014ej0001 rev.0.01 page 10 of 15 may 09, 2011 test circuit 3 fig. 13 v uvlo test circuit fig. 15 t plh/ t phl test circuit fig. 17 t plh /t phl test wave forms fig. 18 t desat test wave forms fig. 14 i flh test circuit v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 i f v cc v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 i f v cc v cc v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 i f 10 10 nf t phl t plh i f v out i f v out fault v deset 90% 90% 10% 50% 50% 50% 50% 10% t r t f t deset (low) t deset (mute) t deset (10%) t deset (90%) t reset (fault) t deset (fault) fig. 17 t desat test circuit v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 i f 2.1 k v cc 10 10 nf 100 pf preliminary document specifications in this document are tentative and subject to change. ps9402 chapter title r08ds0014ej0001 rev.0.01 page 11 of 15 may 09, 2011 test circuit 4 fig. 19 cm h test circuit (led1 on) fig. 21 cm h test circuit (led2 on) fig. 23 cm h , cm l test wave forms (led1 on, off) fig. 24 cm h , cm l test wave forms (led2 on, off) fig. 22 cm l test circuit (led2 off) fig. 20 cm l test circuit (led1 off) v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v cc 10 10 nf + ? scope v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v cc 10 10 nf + ? scope 2.1 k scope v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v cc 10 10 nf ? + 2.1 k scope v s v cc 1 fault v s cathode anode anode cathode v e v led desat v cc 2 v ee v o v clamp v ee 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v cc 10 10 nf ? + v oh v ol 1 v 15 v 1 500 v v cm 0 v v o (cm h : i f = 10 ma) v o (cm l : i f = 0 ma) t r t f 90% 10% gnd v ol open 2 v 1 500 v v cm 0 v v fault (cm h : i f = 10 ma, desat) v fault (cm l : i f = 0 ma, desat) t r t f 90% 10% preliminary document specifications in this document are tentative and subject to change. ps9402 chapter title r08ds0014ej0001 rev.0.01 page 12 of 15 may 09, 2011 taping specifications (unit: mm) packing: 850 pcs/reel 2.00.5 r 1.0 13.00.2 3.5 21.00.8 3302.0 1001.0 4.5 0.1 3.8 0.1 0.35 10.8 0.1 4.0 0.1 2.0 0.1 11.5 0.1 1.75 0.1 1.55 0.1 24 0.3 16 0.1 10.9 0.1 2.0 0.5 23.9 to 27.4 outer edge of flange 29.51.0 25.51.0 1.5 +0.1 ?0 ps9402-e3 tape direction outline and dimensions (tape) outline and dimensions (reel) preliminary document specifications in this document are tentative and subject to change. ps9402 chapter title r08ds0014ej0001 rev.0.01 page 13 of 15 may 09, 2011 notes on handling 1. recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 260 c or below (package surface temperature) ? time of peak reflow temp erature 10 seconds or less ? time of temperature higher than 220 c 60 seconds or less ? time to preheat temperature from 120 to 180 c 120 30 s ? number of reflows three ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) 12030 s (preheating) 220 c 180 c package surface temperature t ( c) time (s) recommended temperature profile of infrared reflow (heating) to 10 s to 60 s 260 c max. 120 c (2) wave soldering ? temperature 260 c or below (molten solder temperature) ? time 10 seconds or less ? preheating conditions 120 c or below (package surface temperature) ? number of times one (allowed to be dipped in solder including plastic mold portion.) ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (3) soldering by soldering iron ? peak temperature (lead part temperature) 350 c or below ? time (each pins) 3 seconds or less ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (a) soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead (4) cautions ? fluxes avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. preliminary document specifications in this document are tentative and subject to change. ps9402 chapter title r08ds0014ej0001 rev.0.01 page 14 of 15 may 09, 2011 2. cautions regarding noise be aware that when voltage is applied suddenly between the photocoupler?s input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. usage cautions 1. this product is weak for static electricity by designed w ith high-speed integrated circuit so protect against static electricity when handling. 2. board designing (1) by-pass capacitor of more than 0.1 f is used between v cc and gnd near device. also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) in older to avoid malfunctions and characteristics de gradation, igbt collector or emitter traces should not be closed to the led input. 3. make sure the rise/fall time of the forward current is 0.5 s or less. 4. in order to avoid malfunctions, make sure the rise/fall slope of the supply voltage is 3 v/ s or less. 5. avoid storage at a high te mperature and high humidity. preliminary document specifications in this document are tentative and subject to change. ps9402 chapter title r08ds0014ej0001 rev.0.01 page 15 of 15 may 09, 2011 caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposi ng of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, tran sport and dispose of materials that contain arsenic and ot her such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subjec t to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth. all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ps9402 preliminary data sheet description rev. date page summary 0.01 may 09, 2011 ? first edition issued notice 1. all information included in this document is current as of the date this document is issued. such information, however, is s ubject to change without any prior notice. before purchasing or using any renesas electronics products listed herein, please confirm the latest product information with a renesas electronics sales office. also , please pay regular and careful attention to additional and different information to be disclosed by renesas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . 4. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this document, you should comply with the applicable export control l aws and regulations and follow the procedures required by such laws and regulations. you should not use renesas electronics products or the technology described in this document for any purpose rela ting to military applications or use by the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporate d into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 7. renesas electronics products are classified according to the following three quality grades: "standard", "high quality", an d "specific". the recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. you must check the quality grade of each renesas electronics produ ct before using it in a particular application. you may not use any renesas electronics product for any application categorized as "specific" without the prior written consent of renesas electronics. fu rther, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for an application categorized as "specific" or for which the product is not intended wh ere you have failed to obtain the prior written consent of renesas electronics. the quality grade of each renesas electronics product is "standard" unless otherwise expressly specified in a renesas electroni cs data sheets or data books, etc. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment ; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "specific": aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or syst ems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct thr eat to human life. 8. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas el ectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance design . please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics produc t, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measu res. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compati bility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, in cluding without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of renes as electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2880 scott boulevard santa clara, ca 95050-2554, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 7f, no. 363 fu shing north road taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 1 harbourfront avenue, #06-10, keppel bay tower, singapore 098632 tel: +65-6213-0200, fax: +65-6278-8001 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co., ltd. 11f., samik lavied' or bldg., 720-2 yeoksam-dong, kangnam-ku, seoul 135-080, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2011 renesas electronics corporation. all rights reserved. colophon 1.0 |
Price & Availability of PS9402-V
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |