vishay siliconix SI7625DN new product document number: 65737 s10-0638-rev. a, 22-mar-10 www.vishay.com 1 p-channel 30 v (d-s) mosfet features ? halogen-free accord ing to iec 61249-2-21 definition ?trenchfet ? power mosfet ? 100% r g tested ? 100% uis tested ? compliant to rohs directive 2002/95/ec applications ? notebook adapter switch ? notebook load switch product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) - 30 0.007 at v gs = - 10 v - 35 d 39.5 nc 0.011 at v gs = - 4.5 v - 35 d notes: a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. c. maximum under steady stat e conditions is 81 c/w. d. package limited. e. see solder profile ( www.vishay.com/doc?73257 ). the powerpak 1212-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of t he singulation process in manufactu ring. a solder fillet at the exposed copper tip cannot be guara nteed and is not required to ensure adequate bottom side solder interconnection. f. rework conditions: manual sol dering with a soldering iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d - 35 d a t c = 70 c - 35 d t a = 25 c - 17.3 a, b t a = 70 c - 13.8 a, b pulsed drain current i dm - 80 continuous source-drain diode current t c = 25 c i s - 35 d t a = 25 c - 3.0 a, b avalanche current l = 0.1 mh i as - 20 single-pulse avalanche energy e as 20 mj maximum power dissipation t c = 25 c p d 52 w t c = 70 c 33 t a = 25 c 3.7 a, b t a = 70 c 2.4 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) e, f 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, c t 10 s r thja 26 33 c/w maximum junction-to-case steady state r thjc 1.9 2.4 s g d p-channel mosfet 1 2 3 4 5 6 7 8 s s s g d d d d 3.30 mm 3.30 mm powerpak ? 1212-8 bottom view ordering information: SI7625DN-t1-ge3 (lead (pb)-free and halogen-free)
www.vishay.com 2 document number: 65737 s10-0638-rev. a, 22-mar-10 vishay siliconix SI7625DN new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 30 v v ds temperature coefficient v ds /t j i d = - 250 a - 23 mv/c v gs(th) temperature coefficient v gs(th) /t j 5.0 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.0 - 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 55 c - 5 on-state drain current a i d(on) v ds - 10 v, v gs = - 10 v - 30 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 15 a 0.0056 0.007 v gs = - 4.5 v, i d = - 10 a 0.0088 0.011 forward transconductance a g fs v ds = - 10 v, i d = - 15 a 47 s dynamic b input capacitance c iss v ds = - 15 v, v gs = 0 v, f = 1 mhz 4427 pf output capacitance c oss 452 reverse transfer capacitance c rss 430 total gate charge q g v ds = - 15 v, v gs = - 10 v, i d = - 10 a 84.5 126 nc v ds = - 15 v, v gs = - 4.5 v, i d = - 10 a 39.5 60 gate-source charge q gs 11 gate-drain charge q gd 13.5 gate resistance r g f = 1 mhz 0.4 1.8 3.6 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 1.5 i d ? - 10 a, v gen = - 10 v, r g = 1 15 30 ns rise time t r 13 26 turn-off delaytime t d(off) 55 100 fall time t f 10 20 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 1.5 i d ? - 10 a, v gen = - 4.5 v, r g = 1 55 100 rise time t r 42 80 turn-off delaytime t d(off) 52 100 fall time t f 17 34 drain-source body diode characteristics continous source-drain diode current i s t c = 25 c - 35 a pulse diode forward current i sm - 80 body diode voltage v sd i s = - 3 a, v gs = 0 v - 0.74 - 1.2 v body diode reverse recovery time t rr i f = - 10 a, di/dt = 100 a/s, t j = 25 c 14 24 ns body diode reverse recovery charge q rr 48nc reverse recovery fall time t a 8 ns reverse recovery rise time t b 6
document number: 65737 s10-0638-rev. a, 22-mar-10 www.vishay.com 3 vishay siliconix SI7625DN new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 16 32 48 64 80 0.0 0.5 1.0 1.5 2.0 2.5 v ds - drain-to-source voltage (v) - drain current (a) i d v gs =10vthru4v v gs =3v 0.002 0.004 0.006 0.008 0.010 0.012 0 1632486480 r ds(on) - on-resistance ( ) i d - drain current (a) v gs =4.5v v gs =10v 0 2 4 6 8 10 0 1836547290 i d =10a - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds =20v v ds =10v v ds =15v transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 012345 v gs - gate-to-source voltage (v) - drain current (a) i d t c = 25 c t c = - 55 c t c = 125 c c rss 0 1200 2400 3600 4800 6000 0 6 12 18 24 30 c iss v ds - drain-to-source voltage (v) c - capacitance (pf) c oss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 t j - junction temperature (c) (normalized) r ds(on) - on-resistance v gs =10v v gs =4.5v i d =15a
www.vishay.com 4 document number: 65737 s10-0638-rev. a, 22-mar-10 vishay siliconix SI7625DN new product typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd - source-to-drain voltage (v) - source current (a) i s 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c - 0.4 - 0.1 0.2 0.5 0.8 - 50 - 25 0 25 50 75 100 125 15 0 i d =250a variance (v) v gs(th) t j - temperature (c) i d =5ma on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.000 0.006 0.012 0.018 0.024 0.030 0246810 - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) t j = 25 c t j = 125 c i d =15a 0 20 40 60 80 100 0 1 1 1 0 0 . 00.01 power (w) 0.1 p u lse (s) safe operating area 0.01 100 1 100 0.01 i d - drain current (a) 0.1 v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specied 1ms 10 ms 100 ms 0.1 1 10 10 t a = 25 c single pulse limited by r ds(on) * 1s dc 10 s bvdss limited
vishay siliconix SI7625DN document number: 65737 s10-0638-rev. a, 22-mar-10 www.vishay.com 5 new product mosfet typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 14 28 42 56 70 0 25 50 75 100 125 150 t c - case temperature (c) i d - drain current (a) package limited power, junction-to-case 0 13 26 39 52 65 0 25 50 75 100 125 150 t c - case temperature (c) power (w) power, junction-to-ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 t a - ambient temperature (c) power (w)
www.vishay.com 6 document number: 65737 s10-0638-rev. a, 22-mar-10 vishay siliconix SI7625DN new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65737 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 single pulse t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 81 c/w 3. t jm - t a =p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 0.02 normalized thermal transient impedance, junction-to-case 1 0.1 0.01 0.2 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 0.1 10 -3 10 -2 1 10 -1 10 -4 0.05 0.02 single pulse
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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