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BTM7745G high current h-bridge trilith ic 3g data sheet, rev. 1.0, may 2010 automotive power
data sheet 2 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4.1 pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 general product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5.2 functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5.3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6block description and characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6.1 supply characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6.2 power stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6.2.1 power stages - static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6.2.2 switching times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6.2.3 power stages - dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6.3 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6.3.1 overvoltage lock out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6.3.2 undervoltage shut down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.3.3 overtemperature protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.3.4 current limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.3.5 short circuit protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.3.6 electrical characteristics - protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.4 control and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.4.1 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.4.2 dead time generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.4.3 status flag diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.4.4 truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.4.5 electrical characteristics - control and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 7 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 7.1 application and layout considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 8 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 table of contents
pg-dso-36-29 type package marking BTM7745G pg-dso-36-29 BTM7745G data sheet 3 rev. 1.0, 2010-05-28 high current h-bridge trilith ic 3g BTM7745G 1overview features ? integrated high current h-bridge ? path resistance of max. 500 m @ 150 c ( typ. 250 m @ 25 c) ? low quiescent current of typ. 5a @ 25 c ? current limitation level of 12 a typ. (6 a min.) ? driver circuit with logic inputs ? status flag diagnosis ? overtemperature shut down with latch behaviour ? overvoltage lock out ? undervoltage shut down ? switch-mode current limitation for reduced power dissipation in overcurrent situation ? integrated dead time generation ? operation up to 28v ? green product (rohs compliant) ? aec qualified description the BTM7745G is a fully integrated high current h-bridge for motor drive applications. it contains two p-channel highside mosfets and two n-channel lowside mosfets with an integrated driver ic in one package. due to the p-channel highside switches the need for a charge pump is eliminated thus minimizing emi. interfacing to a microcontroller is made easy by the integrated driver ic which features logic level inputs, diagnosis,dead time generation and protection against overtemperature, ov ervoltage, undervoltage, overcurrent and short circuit. the BTM7745G provides an optimized solution for protect ed high current motor drives with very low board space consumption.
high current h-bridge BTM7745G block diagram data sheet 4 rev. 1.0, 2010-05-28 2 block diagram gnd out2 vs overcurr. detection hs2 overcurr. detection ls2 gate driver ls gate driver hs overvolt. detection undervolt. detection gnd out1 vs overcurr. detection hs1 overcurr. detection ls1 overtemp. detection st in1 in2 inh gate driver ls gate driver hs ls off hs off ls off hs off digital logic hs1 hs2 ls1 ls2 figure 1 block diagram 3terms following figure shows the te rms used in this data sheet. inh in2 in1 vs gnd out2 out1 st v st v inh v in1 v in2 v out i out , i d , i l v ds(hs) v sd(ls) v sd(ls) v out i in1 i in2 i inh i st i gnd , i d(ls) i s , -i d(hs) v ds(hs) v s i out , i d , i l figure 2 terms
data sheet 5 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G pin configuration 4 pin configuration 4.1 pin assignment out1 out1 out1 vs vs 36 35 34 33 32 31 gnd in1 out1 in2 1 2 3 4 5 6 7 8 9 10 30 29 28 27 vs st inh vs vs 11 12 13 14 26 25 24 23 gnd gnd gnd gnd vs vs vs 15 16 17 18 22 21 20 19 out2 out2 out2 out2 out1 out1 out1 out1 gnd gnd gnd out2 out2 out2 out2 figure 3 pin configuration BTM7745G 4.2 pin definitions and functions pins written in bold type need power wiring. pin symbol function 1..4, 33..36 out1 output of first half bridge 5..8, 23..26 gnd ground 9 in1 input of first half bridge 10 in2 input of second half bridge 11..14, 29..32 vs supply, all pins to be connected and shorted externally 15..22 out2 output of second half bridge 27 inh inhibit pin, to set device in sleep/stand-by mode 28 st status signal, open drain output
high current h-bridge BTM7745G general product characteristics data sheet 6 rev. 1.0, 2010-05-28 5 general product characteristics 5.1 absolute maximum ratings t j = -40 q c to +150 q c; all voltages with respect to ground (unless otherwise specified) pos. parameter symbol limit values unit conditions min. max. supply voltage v s -0.3 45 v ? logic input voltage v in1, v in2, v inh -0.3 5.5 v ? hs/ls continuous drain current i d(hs) i d(ls) -3.2 3.2 a t c < 85c switch active voltage at st pin v st -0.3 45 v ? st pin continuous current i st 0 2 ma ? st pin peak current i st 0 4 ma t peak < 10s thermal maximum ratings junction temperature t j -40 150 q c ? storage temperature t stg -55 150 q c ? esd susceptibility esd susceptibility in1, in2, st, inh out1, out2, gnd, vs v esd -2 -4 2 4 kv 2) hbm according to eia/jesd 22-a 114b (1.5 k : , 100pf) hbm 2) note: stresses above the ones listed here may cause perm anent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note: integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are not designed for continuous repetitive operation. absolute maximum ratings 1) 1) not subject to production test, specified by design. 5.1.1 5.1.2 5.1.3 5.1.4 5.1.5 5.1.6 5.1.7 5.1.8 5.1.9
data sheet 7 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G general product characteristics maximum single pulse current 0 5 10 15 20 0,0001 0,001 0,01 0,1 1 10 100 t pulse [s] i max [a] figure 4 BTM7745G maximum single pulse current ( t c = t j(0) < 85 q c) this diagram shows the maximum single pulse curr ent that can be driven for a given pulse time t pulse . the maximum reachable current may be smaller depending on the current limitation level. pulse time may be limited due to thermal protection of the device. 5.2 functional range pos. parameter symbol limit values unit conditions min. max. supply voltage range for normal operation v s(nor) 8 18 v vs pins shorted extended supply voltage range for operation v s(ext) 5.5 28 v vs pins shorted; parameter deviations possible; 1) overtemperature protection av ailable up to supply voltage v s = 18v. junction temperature t j -40 150 q c ? 1) note: within the functional range the ic operates as de scribed in the circuit description. the electrical characteristics are specifi ed within the conditions given in the re lated electrical ch aracteristics table. 5.2.1 5.2.2 5.2.3
high current h-bridge BTM7745G general product characteristics data sheet 8 rev. 1.0, 2010-05-28 5.3 thermal resistance note: this thermal data was generated in accordance wit h jedec jesd51 standards. fo r more information, go to www.jedec.org . pos. parameter symbol limit values unit conditions min. typ. max. thermal resistance junction to soldering point, low side switch r thjsp(ls) = ' t j(ls) / p v(ls) r thjsp(ls) ? ? 29 k/w 1) not subject to production test, specified by design. thermal resistance junction to soldering point, high side switch r thjsp(hs) = ' t j(hs) / p v(hs) r thjsp(hs) ? ? 29 k/w 1) thermal resistance junction to soldering point, both switches r thjsp = max[ ' t j(hs) , ' t j(ls) ] / ( p v(hs) + p v(ls) ) r thjsp ? ? 29 k/w 1) thermal resistance junction-ambient r thja ? 46 ? k/w 1) 2) specified r thja value is according to jedec jesd51-2, -7 at natural convection on fr4 2s2p board; the product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm boar d with 2 inner copper layers (2 x 70m cu, 2 x 35m cu). ; 2) 1) transient thermal impedance z thja figure 5 is showing the typical transient thermal impedance of high side or low side switch of BTM7745G mounted according to jedec jesd51-7 at natural convection on fr4 2s2p board. the device (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70m cu, 2 x 35m cu). for the simulation each chip was separately powered with 1w at an ambient temperature t a of 85c. 0 5 10 15 20 25 30 35 40 45 50 0,001 0,01 0,1 1 10 100 1000 t pulse [s] z th-ja [k/w] high side sw itch / low side sw itch figure 5 typical transient thermal impedance of BTM7745G on jesd51-7 2s2p board (1w each chip (separately heated), t a = 85c, single pulse) 5.3.1 5.3.2 5.3.3 5.3.4
data sheet 9 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G block description and characteristics 6block description and characteristics 6.1 supply characteristics pos. parameter symbol limit values unit test conditions min. typ. max. general supply current i s(on) ? 5 9.5 ma v inh or v in1 or v in2 = 5 v dc-mode normal operation (no fault condition) quiescent current i s(off) ? 5 15 a v inh = v in1 = v in2 = 0 v t j < 85 q c; 1) not subject to production test, specified by design. 1) ? ? 30 a v inh = v in1 = v in2 = 0 v 0 1 2 3 4 5 6 7 8 9 10 -40 0 40 80 120 160 t i s(off ) [a] [c] figure 6 typical quiescent current vs. junction temperature (typ. @ v s = 13.5v) v s = 8 v to 18 v , t j = -40 q c to +150 q c , i l = 0a, vs pins shorted, all voltages with respect to ground, positive current flowing into pin ( unless otherwise specified) 6.1.1 6.1.2
data sheet 10 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G block description and characteristics 6.2 power stages the power stages of the BTM7745G cons ist of p-channel vertical dmos transis tors for the high side switches and n-channel vertical dmos transistors for the low side swit ches. all protection and diag nostic functions are located in a separate control chip. both switches, high side a nd low side, allow active freewheeling and thus minimize power dissipation in the forward o peration of the integrated diodes. the on state resistance r on is dependent on the supply voltage v s as well as on the junction temperature t j . the typical on state resistance characteristics are shown in figure 7 . 0 50 10 0 15 0 200 250 4 8 12 16 20 24 28 v s [v] r on(hs) [m :@ t j = 150c t j = 25c t j = -40c high side switch 0 50 10 0 15 0 200 250 300 350 400 4 8 12 16 20 24 28 t j = 150c t j = 25c t j = -40c low side switch v s [v] r on(ls) [m :@ figure 7 typical on state resistance vs. supply voltage
data sheet 11 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G block description and characteristics 6.2.1 pos. parameter symbol limit values unit test conditions min. typ. max. on state high side resistance r on(hs) ? ? 100 140 ? 190 m : i out = 1 a v s = 13.5 v t j = 25 q c; 1) not subject to production test, specified by design. leakage current high side i l(lkhs) ? ? ? ? 1 5 a v inh = v in1 = v in2 = 0 v v out = 0 v t j < 85 q c; 1) t j = 150 q c reverse diode forward-voltage high side 2) due to active freewheeling diode is conducting only until related switch is on. 2) v ds(hs) ? ? ? 0.9 0.8 0.6 ? ? 0.8 v i out = -1 a t j = -40 q c; 1) t j = 25 q c; 1) t j = 150 q c low side switch - static characteristics on state low side resistance r on(ls) ? ? 150 250 ? 300 m : i out = -1 a v s = 13.5 v t j = 25 q c; 1) t j = 150 q c leakage current low side -i l(lkls) ? ? ? ? 1 3 a v inh = v in1 = v in2 = 0 v v out = v s t j < 85 q c; 1) t j = 150 q c reverse diode forward-voltage low side 2) v sd(ls) ? ? ? 0.9 0.8 0.6 ? ? 0.8 v i out = 1 a t j = -40 c; 1) t j = 25 q c; 1) t j = 150 q c 1) t j = 150 q c power stages - static characteristics v s = 8 v to 18 v , t j = -40 q c to +150 q c , vs pins shorted, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) high side switch - static characteristics 6.2.1 6.2.2 6.2.3 6.2.4 6.2.5 6.2.6
data sheet 12 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G block description and characteristics 6.2.2 switching times in v out t t 90% 40% ' v out 90% 40% t dr(hs) t r(hs) t df(hs) t f(hs) ' v out figure 8 definition of switching times high side (r load to gnd) in v out t t 60% 10% 60% 10% ' v out t df(ls) t f(ls) ' v out t dr(ls) t r(ls) figure 9 definition of switching times low side (r load to vs) due to the timing difference s for the rising and the falling edge there will be a slight differenc e between th e length of the input pulse and the length of the output puls e. it can be calculated using the following formulas: ? ' t hs = ( t dr(hs) + 0.2 t r(hs) ) - ( t df(hs) + 0.8 t f(hs) ) ? ' t ls = ( t df(ls) + 0.2 t f(ls) ) - ( t dr(ls) + 0.8 t r(ls) ).
data sheet 13 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G block description and characteristics 6.2.3 pos. parameter symbol limit values unit test conditions min. typ. max. high side switch dynamic characteristics rise-time of hs t r(hs) 5 15 25 s ? slew rate hs on ' v out / t r( hs) ? 0.4 ? v/s ? switch on delay time hs t dr(hs) 50 95 140 s ? fall-time of hs t f(hs) 5 15 25 s ? slew rate hs off - ' v out / t f(hs) ? 0.4 ? v/s ? switch off delay time hs t df(hs) 25 55 80 s ? low side switch dynamic characteristics rise-time of ls t r(ls) 10 20 30 s ? slew rate ls switch off ' v out / t r(ls) ? 0.4 ? v/s ? switch off delay time ls t dr(ls) 30 60 90 s ? fall-time of ls t f(ls) 10 20 30 s ? slew rate ls switch on - ' v out / t f(ls) ? 0.4 ? v/s ? switch on delay time ls t df(ls) 40 80 120 s ? power stages - dynamic characteristics 6.3 protection functions the device provides integrated protection functions. these are designed to prevent ic destruction under fault conditions described in the data s heet. fault conditions are considered as ?outside? normal operating range. protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation ( chapter 6.3.4 ). overvoltage, overtemperature and overcurr ent are indicated by switching the open drain output st to low. although the slew rate is defined as above ( chapter 6.2.3 ), in case of overvoltage and overcurrent the device will have a hi gher slew rate of typically 11v/s. in the following the protection functions are listed in order of their priority. overvoltage lock out overrides all other error modes. 6.3.1 overvoltage lock out to assure a high immunity against overvoltages (e.g . load dump conditions) the device shuts both lowside mosfets off and turns both highside mosfet on, if the supply voltage v s is exceeding the over voltage protection level v ov(off) . the ic operates in normal mode again with a hysteresis v ov(hy) if the supply voltage decreases below the switch-on voltage v ov(on) . this behavior of the BTM7745G will lead to freewheeling in highside during over voltage. v s = 13.5v t j = +150 c, r load = 12 : v inh = 5v, vs pins shorted, all voltage s with respect to ground, positive current flowing into pin ( unless otherwise specified) 6.2.7 6.2.8 6.2.9 6.2.10 6.2.11 6.2.12 6.2.13 6.2.14 6.2.15 6.2.16 6.2.17 6.2.18
data sheet 14 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G block description and characteristics 6.3.2 undervoltage shut down to avoid uncontrolled motion of the driven motor at low vo ltages the device shuts off (both outputs are tri-state), if the supply voltage v s drops below the s witch-off voltage v uv(off) . in this case all latches will be reset. the ic becomes active again with a hysteresis v uv(hy) if the supply voltage rises above the switch-on voltage v uv(on) . 6.3.3 overtemperature protection the BTM7745G is protected against ov ertemperature by integrated temperature sensors. each half bridge, which consists of one high side and one low side switch, is protected by one temperature sensor located in the high side switch. both temperature sensors function independently . a detection of overtemperature through temperature sensor leads to a shut down of both s witches in the half bridge. this state is latched until the device is reset by a low signal with a minimum length of t reset simultaneously at the inh pin and both in pins, provided that its temperature has decreased at least the thermal hysteresis ' t in the meantime. overtemperature protection is available up to supply voltage v s = 18v. for sufficient over temperature prot ection please consider also operation below the limitations outlined in figure 4 and figure 5 . repetitive use of the ov ertemperature protection might reduce lifetime. 6.3.4 current limitation the current in the bridge is measured in all four switches. as soon as the current in fo rward direction in one switch is reaching the limit i clx , this switch is deactivated for t cls . in case of inh = 5v (high) the other switch of the same half bridge is activated for the same time ( t cls ). during that time all changes at the related in pin are ignored. however, the inh pin can still be used to switch all mosfets off. after t cls the switches return to their initial setting. the error signal at the st pin is reset after 1.5 * t cls if no overcurrent state is detected in the meantime. unintentional triggering of the current limitation by shor t current spikes (e.g. inflic ted by emi coming from the motor) is suppressed by internal filter circuitry. due to thresholds and reaction delay times of the filter circuitry the effective current limitation level i clx depends on the slew rate of the load current di/dt as shown in figure 11 . i l t i clx t cls i clx0 1.5*t cls t o o 5v v st figure 10 timing diagram current limitation and status flag
di l /dt i clh [a] [a/ms] 10 11 12 13 14 050100150 i clh0 t j = 25c t j = 150c t j = - 40c high side switch di l /dt i cll [a] [a/ms] 10 11 12 13 14 050100150 i cll0 t j = 25c t j = 150c t j = - 40c low side switch data sheet 15 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G block description and characteristics figure 11 current limitation level vs. current slew rate d i l /dt 8 9 10 11 12 13 14 15 16 6 1014182226 i clh [a] t j = 150c t j = -40c high side switch t j = 25c v s [v] 8 9 10 11 12 13 14 15 16 6 1014182226 v s [v] t j = 150c t j = 25c t j = -40c low side switch i cll [a] figure 12 typical current limitation detection levels vs. supply voltage in combination with a typical inductive load, such as a motor, this resu lts in a switched mode current limitation. this method of limiting the current has the advantage that the power dissipation in the BTM7745G is much smaller than by driving the mosfets in linear mode. therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor start up). however, the regular use of the current limitation is allowed as long as the specified maximum junction temperature is not exceeded. exceeding this temp erature can reduce the lifetime of the device.
data sheet 16 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G block description and characteristics 6.3.5 short circuit protection the device provides embedded protection functions against ? output short circuit to ground ? output short circuit to supply voltage ? short circuit of load the short circuit protection is realized by the previously described current limitation in combination with the over- temperature shut down (see chapter 6.3.3 ) of the device. 6.3.6 pos. parameter symbol limit values unit test conditions min. typ. max. over voltage lock out switch-on voltage v ov(on) 27.8 ? ? v v s decreasing switch-off voltage v ov(off) 28 ? 30 v v s increasing on/off hysteresis v ov(hy) ? 0.2 ? v 1) not subject to production test, specified by design. 1) under voltage shut down switch-on voltage v uv(on) ? ? 5.5 v v s increasing switch-off voltage v uv(off) 4.0 ? 5.4 v v s decreasing on/off hysteresis v uv(hy) ? 0.2 ? v 1) thermal shut down thermal shut down junction temperature t jsd 155 175 200 q c 1) ; v s d 18 v thermal switch on junction temperature t jso 153 ? 190 q c 1) thermal hysteresis ' t ? 7 ? q c 1) reset pulse at inh and in pin (inh, in1 and in2 low) t reset 8 ? ? s 1) current limitation current limitation detection level high side i clh0 6 12 16 a v s = 13.5 v current limitation detection level low side i cll0 6 12 16 a v s = 13.5 v shut off time for hs and ls t cls 50 100 200 s v s = 13.5 v, t j = 25 q c electrical characteristi cs - protection functions v s = 8 v to 18 v , t j = -40 q c to +150 q c , vs pins shorted, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 6.3.1 6.3.2 6.3.3 6.3.4 6.3.5 6.3.6 6.3.7 6.3.8 6.3.9 6.3.10 6.3.11 6.3.12 6.3.13
data sheet 17 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G block description and characteristics 6.4 control and diagnostics 6.4.1 input circuit the control inputs inx and inh consist of ttl/cmos compat ible schmitt triggers with hysteresis which control the integrated gate drivers for the mosfets. to set the device in stand-by mode, inh and inx pins need to be all connected to gnd. when the inh is hi gh, in each half bridge one of the two power switches (hsx or lsx) is switched on, while the other power switch is switched off, depending on the stat us of the inx pin. when inh is low, a high inx signal will turn the correspond ing highside switches on. this provid es customer the possibility to switch on one high side switch while keeping the other switches off and therefore to do an open load detection together with external circuitry (see also chapter 7 - application information). a low on all inx and inh signal will turn off both power switches. to drive the lo gic inputs no external driver is needed, therefore the BTM7745G can be interfaced directly to a microcontroller. 6.4.2 dead time generation in bridge applications it has to be assured that the hi ghside and lowside mosfet are not conducting at the same time, connecting directly the battery voltage to gnd. this is assured by a circuit in the driver ic, which senses the status of the mosfets to ensure that the high or low side switch can be switched on only if the corresponding low or high side switch is completely turned off. 6.4.3 status flag diagnosis the status pin provides diagno stic signal of the device. it is an open dr ain output which requires a pull-up resistor. in case of overvoltage, overtemperature and overcurrent situ ation the status output is s witched to low. in case of current limitation the status ou tput is activated for 1.5 * t cls .
data sheet 18 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G block description and characteristics 6.4.4 device state inputs outputs mode inh in1 in2 hs1 ls1 hs2 ls2 st normal operation 0 0 0 off off off off 1 stand-by mode, reset 1 0 0 off on off on 1 ? 1 0 1 off on on off 1 ? 1 1 0 on off off on 1 ? 1 1 1 on off on off 1 ? open-load detection mode 0 0 1 off off on off 1 enable open-load detection 0 1 0 on off off off 1 enable open-load detection 0 1 1 on off on off 1 over-voltage (ov) x x x on off on off 0 shut-down of lss, hss activated, error detected under-voltage (uv) x x x off off off off 1 uv lockout, reset overtemperature or short circuit of hss or 1) in short circuit of hss or lss, the ju nction temperature will arise and as soon as the over temp erature shut down threshold is reached the device will shut down and la tch the status. short circuit of hss and lss itself won?t be detected as failure. lss 1) 0 0 0 off off off off 1 stand-by mode, reset of latch 1 x x off off off off 0 shut-down with latch, error detected x 1 x x x 1 current limitation mode half bridge 1 1 0 x on off x x 0 short circuit in ls1 detected, half bridge 2 operates in normal mode 1 1 x off on x x 0 short circuit in hs1 detected, half bridge 2 operates in normal mode 0 1 x off off x x 0 short circuit in hs1 detected current limitation mode half bridge 2 1 x 0 x x on off 0 short circuit in ls2 detected, half bridge 1 operates in normal mode 1 x 1 x x off on 0 short circuit in hs2 detected, half bridge 1 operates in normal mode 0 x 1 x x off off 0 short circuit in hs2 detected truth table inputs: switches status flag st: 0 = logic low off = switched off 0 = logic low (error) 1 = logic high on = switched on 1 = logic high (normal operation) x = 0 or 1 x = switched on or off
data sheet 19 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G block description and characteristics 6.4.5 pos. parameter symbol limit values unit test conditions min. typ. max. control inputs (in and inh) high level threshold voltage inh, in1, in2 v inh(h) , v in1(h) , v in2(h) ? 1.6 2 v ? low level threshold voltage inh, in1, in2 v inh(l) , v in1(l) , v in2(l) 1.1 1.4 ? v ? input voltage hysteresis v inhhy ,v inhy ? 200 ? mv 1) not subject to production test, specified by design. input current i inh(h) , i in1(h) , i in2(h) ? 30 200 a v in1 , v in2 , v inh = 5.5 v input current i inh(l) , i in1(l) , i in2(l) ? 25 125 a v in1 , v in2 , v inh = 0.4 v status signal status low output voltage v st(low) ? ? 0.4 v i st = 1.6 ma status leakage current i st(lk) ? ? 1 a v st = 0...28 v 1) electrical characteristics - control and diagnostics v s = 8 v to 18 v , t j = -40 q c to +150 q c , vs pins shorted, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 6.4.1 6.4.2 6.4.3 6.4.4 6.4.5 6.4.6 6.4.7
data sheet 20 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G application information 7 application information note: the following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. xc866 tle 4278g v s reset vss wo ro q d gnd i microcontroller reverse polarity protection voltage regulator i/o i/o i/o i/o c d 47nf c q 22f r 1 10k : e.g. ipd50p03p4l-11 vs out1 gnd BTM7745G c sc vs out2 gnd ls2 ls1 hs2 hs1 m r d1 r d2 c s d z1 10v i/o i/o i/o vdd r st 4.7k : r in1 4.7k : r in2 4.7k : r inh 4.7k : inh in2 st in1 figure 13 application diagram note: this is a very simplified example of an application ci rcuit. the function must be verified in the real application. 7.1 application and la yout considerations due to the fast switching times for hi gh currents, special care has to be taken during the pcb layout. stray inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges. the BTM7745G has no separate pin for power ground and logic ground. therefore it is re commended to assure that the offset between power ground and logic ground pins of the device is minimized. it is also necessary to ensure that all vs pins are at the same voltage level. therefore the vs pins need to be shorted together. voltage differences between the vs pins may cause parameter deviations (such as reduced current limits) up to a latched shutdown of the device with error signal on the st pin, similar to overtemperature shutdown. due to the fast switching behavior of the device in current limitation mode or overvoltage lock out a low esr electrolytic capacitor c s of at least 100 f from vs to gnd is re commended. this prevents destructive voltage peaks and drops on vs. this is recommended for both pwm and non pwm controlled applications. the value of the capacitor must be verified in the real application. in addition a ceramic capacitor c sc from vs to gnd close to each device is recommended to provide current for the switching phase via a low inductance path and ther efore reducing noise and ground bounce. a reasonable value for this capacitor would be about 470 nf.
high current h-bridge BTM7745G application information data sheet 21 rev. 1.0, 2010-05-28 it is recommended to do the freewheeling in the low side path to ensure a proper function and avoid unintended overtemperature detection and shutdown. for proper operat ion it is also recommended to put a pull-down resistor r dx on each output outx to gnd with a value in the range of e.g. 1...10 k : . these resistors can also be used for open load detection. considerations for open load detection mode as mentioned in chapter 6.4.1 both high side switches can be switched on independently while all other switches are off. this will be realized by setti ng the corresponding in si gnal to high while inh and the other in are low. device state inputs outputs mode inh in1 in2 hs1 ls1 hs2 ls2 st open-load detection mode 0 0 1 off off on off 1 hs2 active 0 1 0 on off off off 1 hs1 active 0 1 1 on off on off 1 both hsx are active together with the recommen ded pull-down resistors on the outputs outx to gnd this provides the possibility to do an open load detection in h-bridge configuration. in case of one high side is active wh ile the other half bridge is off (hs off and ls off) a curren t of up to 2ma will be sourced out of the out of the high ohmic half bridge. th is has to be considered while choosing the right value of the pull-down resistor.
data sheet 22 rev. 1.0, 2010-05-28 high current h-bridge BTM7745G package outlines 8 package outlines hlgf1145 0.65 9.73 0.45 1.67 2) does not include dambar protrusion of 0.05 max. per side 1) does not include plastic or metal protrusion of 0.15 max. per side 1 18 36 19 0.65 0.33 0.2 stand off 2.45 2.65 max. -0.2 -0.1 0.23 +0.09 0.35 x 45? -0.2 1) 7.6 10.3 0.7 ?.2 8? max. ?.3 index marking 1) 12.8 -0.2 0.17 m c a-b d 36x ?.08 2) c d a b pg-dso-36-20, -29, -34, -43, -44-po v05 1.1 c 0.1 36x seating plane 17 x 0.65 = 11.05 ejector mark depth 0.2 max. footprint figure 14 pg-dso-36-29 (plastic green dual small ou tline package) green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. gree n products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). for further information on alternativ e packages, please vi sit our website: http://www.infineon.com/packages . dimensions in mm
high current h-bridge BTM7745G revision history data sheet 23 rev. 1.0, 2010-05-28 9 revision history revision date changes 1.0 2010-05-28 initial version data sheet
edition 2010-05-28 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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