SMBYW02-200 ? october 1999 - ed: 4c high efficiency fast recovery rectifier diodes smb (jedec do-214aa) symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i f(rms) rms forward current 10 a i f(av) average forward current tl=100 c d = 0.5 2a i fsm non repetitive surge peak forward current tp=10ms sinusoidal 50 a tstg storage temperature range - 65 to + 150 c tj maximum operating junction temperature 150 c absolute ratings (limiting values) single chip rectifier suited for switch mode power supplies and high frequency dc to dc converters. packaged in smb, this surface mount device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. description suited for smps very low conduction losses negligible switching losses high surge current capability low forward and reverse recovery times features and benefits i f(av) 2 a v rrm 200 v v f (max) 0.85 v tj (max) 150 c main product characteristics 1/5 obsolete product(s) - obsolete product(s)
symbol parameters test conditions min. typ. max. unit v f * reverse leakage current tj = 25 ci f = 6 a 1.25 v t j = 100 ci f = 2 a 0.8 0.85 i r ** forward voltage drop t j = 25 cv r = v rrm 10 m a t j = 100 c 0.1 0.3 ma pulse test : * tp = 380 m s, d < 2 % ** tp = 5 ms, d < 2 % to evaluate the conduction losses use the following equation : p = 0.7 x i f(av) + 0.075 x i f 2 (rms) static electrical characteristics symbol test conditions min. typ. max. unit trr t j = 25 ci f = 1a di f /dt = -50a/ m s v r = 30v 26 35 ns tfr t j = 25 ci f = 2a di f /dt = -50a/ m s v fr = 1.1 x v f max 30 ns v fp t j = 25 ci f = 2a di f /dt = -50a/ m s5v recovery characteristics symbol parameter value unit rth (j-l) junction to leads 25 c/w thermal resistance SMBYW02-200 2/5 obsolete product(s) - obsolete product(s)
0.0 0.4 0.8 1.2 1.6 2.0 2.4 0.0 0.5 1.0 1.5 2.0 2.5 =0.05 =0.1 =0.2 =0.5 t =tp/t tp i f(av)(a) p f(av)(w) =1 fig. 1: low frequency power losses versus average current. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 10 20 30 40 50 60 p=0.5w t i m =tp/t tp i m(a) p=1.5w p=2.5w fig. 2: peak current versus form factor. 0.001 0.01 0.1 1 10 0.01 0.1 1 zth(j-c) (tp. ) k= rth(j-c) =0.5 =0.2 =0.1 single pulse tp(s) t =tp/t tp k fig. 4: relative variation of thermal impedance junction to lead versus pulse duration. 0.001 0.01 0.1 1 10 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 im t =0.5 t(s) i m(a) tc=25 c o tc=70 c o tc=100 c o fig. 3: non repetitive surge peak forward current versus overload duration. 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i fm(a) v fm(v) tl=100 c o 20 fig. 5: voltage drop versus forward current (maximum values). 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t =tp/t tp =0.5 f(av)(a) i o tamb( c) 1cm cu 2 rth(j-a)=75 c/w o rth(j-a)=rth(j-l) fig. 6: average current versus ambient temperature ( d =0.5). SMBYW02-200 3/5 obsolete product(s) - obsolete product(s)
fig. 8: recovery time versus di f /dt. fig. 7: capacitance versus reverse voltage applied. fig. 10: dynamic parameters versus junction temperature. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 10 20 30 40 50 60 70 80 90 100 rth(j-a) 2 scu(cm ) printed circuit : epoxy (e=35m) fig. 11: thermal resistance junction to ambient versus copper surface under each lead. fig. 9: peak reverse current versus di f /dt. SMBYW02-200 4/5 obsolete product(s) - obsolete product(s)
package mechanical data smb e c l e1 d a1 a2 b ref. dimensions millimeters inches min. max. min. max. a1 1.90 2.45 0.075 0.096 a2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 e 5.10 5.60 0.201 0.220 e1 4.05 4.60 0.159 0.181 d 3.30 3.95 0.130 0.156 l 0.75 1.60 0.030 0.063 1.52 2.75 2.3 1.52 footprint dimensions (in millimeters) smb information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com ordering type marking package weight base qty delivery mode SMBYW02-200 a20 smb 0.11g 2500 tape & reel band indicates cathode epoxy meets ul94,v0 SMBYW02-200 5/5 obsolete product(s) - obsolete product(s)
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