VESD12A1C-HD1 document number 81799 rev. 1.2, 02-sep-08 vishay semiconductors www.vishay.com 1 20 8 55 20 8 56 2 1 for technical support, please contact: esd-protection@vishay.com esd-protection diode in llp1006-2l features ? ultra compact llp1006-2l package ? low package height < 0.4 mm ? 1-line esd-protection ? low leakage current < 0.01 a ? low load capacitance c d = 12.5 pf (v r = 6 v; f = 1 mhz) ? esd-protection acc. iec 61000-4-2 30 kv contact discharge 30 kv air discharge ? high surge current acc. iec61000-4-5 i pp > 4 a ? soldering can be checked by standard vision inspection. no x-ray necessary ? lead (pb)-free component ? pin plating nipdau (e4) no whisker growth ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec marking (example only) bar = cathode marking x = date code y = type code (see table below) ordering information package data absolute maximum ratings * please see document ?vishay green and halogen-free definitions (5-2008)? http://www.vishay.com/doc?99902 21121 xy device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity VESD12A1C-HD1 VESD12A1C-HD1-gs08 8000 8000 device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions VESD12A1C-HD1 llp1006-2l g 0.72 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals rating test conditions symbol value unit peak pulse current acc. iec 61000-4-5, t p = 8/20 s/single shot i ppm 4a peak pulse power acc. iec 61000-4-5, t p = 8/20 s/single shot p pp 92 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. ie c 61000-4-2; 10 pulses v esd 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c
www.vishay.com 2 document number 81799 rev. 1.2, 02-sep-08 VESD12A1C-HD1 vishay semiconductors for technical support, please c ontact: esd-protection@vishay.com bias-mode (bi directional as ymmetrical protection mode) with the VESD12A1C-HD1 one signal- or data-lines (l1) can be protected against voltage transients. with pin 1 connected to ground and pin 2 connected to a signal - or data-line which has to be protected. as long as the voltage level on the data- or signal-line is between 0 v (ground level) and the specified m aximum r everse w orking v oltage ( v rwm ) the protection diode between data line and ground offers a high isolation to the ground line. the protection device behaves like an open switch. as soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the tr ansient current to ground. now the protection device behaves like a closed switch. the c lamping v oltage ( v c ) is defined by the br eakthrough v oltage ( v br ) level plus the voltage drop at the series impedance (res istance and inductance) of the protection device. any negative transient signal will be clamped accordingly. t he negative transient curr ent is flowing in the forward direction of the protection diode. the low f orward v oltage ( v f ) clamps the negative transient close to the ground level. due to the different clamping levels in forward and reverse direction the VESD12A1C-HD1 clamping behaviour is bi directional and as ymmetrical ( bias ). electrical characteristics ratings at 25 c, ambient temperature, unless otherwise specified VESD12A1C-HD1 bias mode (between pin 1 and pin 2) l1 20925 2 1 parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 1 lines reverse stand off voltage at i r = 0.1 a v rwm 12 v reverse current at v r = 12 v i r < 0.01 0.1 a reverse break down voltage at i r = 1 ma v br 13.5 14 16 v reverse clamping voltage at i pp = 1 a v c 15.8 17 v at i pp = i ppm = 4 a v c 20 23 v forward clamping voltage at i pp = 0.2 a v f 0.9 1.2 v at i pp = 1 a v f 1.1 1.5 v at i pp = i ppm = 4 a v f 1.7 2.1 v capacitance at v r = 0 v; f = 1 mhz c d 30 36 pf at v r = 6 v; f = 1 mhz c d 12.5 pf
VESD12A1C-HD1 document number 81799 rev. 1.2, 02-sep-08 vishay semiconductors www.vishay.com 3 for technical support, please contact: esd-protection@vishay.com typical characteristics t amb = 25 c, unless otherwise specified figure 1. 8/20 s peak pulse current wave form (acc. iec 61000-4-5) figure 2. esd discharge current wave form acc. iec 61000-4-2 (330 /150 pf) figure 3. typical capacitance c d vs. reverse voltage v r 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time ( s) i ppm 20 s to 50 % 8 s to 100 % 2054 8 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0 5 10 15 20 25 30 35 01234567 8 9101112 f = 1 mhz 2067 8 v r ( v ) c d (pf) figure 4. typical forward current i f vs. forward voltage v f figure 5. typical reverse voltage v r vs. reverse current i r figure 6. typical clamping volt age vs. peak pulse current i pp 0.001 0.01 0.1 1 10 100 0.5 0.6 0.7 0. 8 0.9 20679 v f ( v ) i f (ma) 0 2 4 6 8 10 12 14 16 0.01 0.1 1 10 100 1000 10000 206 8 0 i r ( a) v r ( v ) 0 5 10 15 20 25 0 re v erse for w ard 206 8 1 i pp (a) v f / v c ( v ) meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) 1 234 5
www.vishay.com 4 document number 81799 rev. 1.2, 02-sep-08 VESD12A1C-HD1 vishay semiconductors for technical support, please c ontact: esd-protection@vishay.com figure 7. typical clamping perf ormance at + 8 kv contact discharge (acc. iec 61000-4-2) figure 8. typical clamping performance at - 8 kv contact discharge (acc. iec 61000-4-2) figure 9. typical clamping volta ge at esd contact discharge (acc. iec 61000-4-2) - 20 - 10 0 10 20 30 40 50 60 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 + 8 k v contact discharge re v erse 206 8 3 t (ns) v c-esd ( v ) - 50 - 40 - 30 - 20 - 10 0 10 20 - 10 0 10 20 30 40 50 60 70 8 090 206 8 2 t (ns) v c-esd ( v ) acc. iec 61000-4-2 - 8 k v contact discharge for w ard - 150 - 100 - 50 0 50 100 150 200 0 5 10 15 20 acc. iec 61000-4-2 contact discharge v c-esd positi v e discharge (pin 2 to pin 1) negati v e discharge (pin 1 to pin 2) 206 8 4 v c-esd ( v ) v esd (k v )
VESD12A1C-HD1 document number 81799 rev. 1.2, 02-sep-08 vishay semiconductors www.vishay.com 5 for technical support, please contact: esd-protection@vishay.com package dimensions in millimeter s (inches): llp1006-2l 20 8 12 foot print recommendation: doc u ment no.:s 8 - v -3906.04-005 (4) solder resist mask solder pad 0.55 [0.022] 0.45 [0.01 8 ] 0.25 [0.010] 0.15 [0.006] 0.45 [0.01 8 ] 0.35 [0.014] 0.3 [0.012] 0.2 [0.00 8 ] 0.4 [0.016] 0.33 [0.013] 1.05 [0.041] 0.95 [0.037] soldermask opening +/-0,03 meas u red middle of the package 0.05 [0.002] 0 [0.000] 0.125 [0.005] ref. 0.65 [0.026] 0.55 [0.022] 0.05 [0.002] 0.25 [0.010] 0.5 [0.020] 1 [0.039] 0.5 [0.020] 0.6 [0.024] 0.2 [0.00 8 ] re v . 4 - date: 2 8 .a u g.200 8 created - date: 13.j u ly.2007 orientation identification
www.vishay.com 6 document number 81799 rev. 1.2, 02-sep-08 VESD12A1C-HD1 vishay semiconductors for technical support, please contact: esd-protection@vishay.com ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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