Part Number Hot Search : 
7805LS DG401AZ A3126 UTC2206B CNS471B6 ECN3067 0R010 04TM1T
Product Description
Full Text Search
 

To Download 2N6594 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  inchange semiconductor product specification silicon pnp power transistors 2N6594 description ? with to-3 package ? complement to type 2n6569 ? wide area of safe operation applications ? designed for low voltage amplifier power switching applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -45 v v ceo collector-emitter voltage open base -40 v v ebo emitter-base voltage open collector -5 v i c collector current -12 a i cm collector current-peak -24 a i b base current -5 a i e emitter current -17 a i em emitter current-peak -34 a p c collector power dissipation t c =25 ?? 100 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2N6594 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-0.1a ;i b =0 -40 v v cesat-1 collector-emitter saturation voltage i c =-4a; i b =-0.4a -1.5 v v cesat-2 collector-emitter saturation voltage i c =-12a; i b =-2.4a -4.0 v v besat base-emitter saturation voltage i c =-4a; i b =-0.4a -2.0 v i ceo collector cut-off current v ce =-40v; i b =0 -1.0 ma i cbo collector cut-off current v cb =-45v; i e =0 -1.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -5.0 ma h fe-1 dc current gain i c =-4a ; v ce =-3v 15 200 h fe-2 dc current gain i c =-12a ; v ce =-4v 5 100 f t transition frequency i c =-1.0a ; v ce =-4v;f=0.5mhz 1.5 20 mhz switching times t d delay time 0.4 | s t r rise time 1.5 | s t stg storage time 5.0 | s t f fall time i c =-2a; i b1 =-i b2 =-0.2a v cc =-30v; t p =25 | s; duty cycle ? 2.0% 1.5 | s thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.75 ?? /w
inchange semiconductor product specification 3 silicon pnp power transistors 2N6594 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)


▲Up To Search▲   

 
Price & Availability of 2N6594

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X