savantic semiconductor product specification silicon npn power transistors BUS12 description with to-3 package high voltage,high speed applications designed for switching-mode power supplies ,crt scanning,inverters, and other industrial applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 850 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 10 v i c collector current 8 a p t total power dissipation t c =25 125 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.17 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUS12 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; l=25mh 400 v v (br)ebo emitter-base breakdown voltage i e =10m a;i c =0 10 v cesat-1 collector-emitter saturation voltage i c =5 a;i b =1 a 1.5 v v cesat-2 collector-emitter saturation voltage i c =8 a;i b =2.5 a 3.0 v v besat-1 base-emitter saturation voltage i c =5 a;i b =1 a 1.4 v v besat-2 base-emitter saturation voltage i c =8 a;i b =2.5 a 1.8 v i ces collector cut-off current v ce =850v;v be =0 t c =125 1.0 3.0 ma i ebo emitter cut-off current v eb =10v; i c =0 1.0 ma h fe dc current gain i c =1a ; v ce =5v 15
savantic semiconductor product specification 3 silicon npn power transistors BUS12 package outline fig.2 outline dimensions
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