aug. 1999 pin configuration mitsubishi semiconductor M54519p/fp 7-unit 400ma darlington transistor array description M54519p and M54519fp are seven-circuit darlington tran- sistor arrays. the circuits are made of npn transistors. both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. features high breakdown voltage (bv ceo 3 40v) high-current driving (ic(max) = 400ma) driving available with pmos ic output wide operating temperature range (ta = ?0 to +75 c) application drives of relays and printers, digit drives of indication ele- ments (leds and lamps), and mos-bipolar logic ic inter- faces function the M54519p and M54519fp each have seven circuits con- sisting of npn darlington transistors. these ics have resis- tance of 20k w between input transistor bases and input pins. the output transistor emitters are all connected to the gnd pin (pin 8). collector current is 400ma maximum. collector-emitter sup- ply voltage is 40v maximum. the M54519fp is enclosed in a molded small flat package, enabling space-saving design. circuit diagram v ma v w c c ?.5 ~ +40 400 ?.5 ~ +40 1.47(p)/1.00(fp) ?0 ~ +75 ?5 ~ +125 ratings symbol parameter conditions unit absolute maximum ratings (unless otherwise noted, ta = ?0 ~ +75 c) collector-emitter voltage collector current input voltage power dissipation operating temperature storage temperature output, h current per circuit output, l ta = 25 c, when mounted on board v ceo i c v i p d t opr t stg 20k 2k 20k input output gnd the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : w the seven circuits share the gnd. 1 in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? in7 ? nc gnd 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 ? o7 ? o6 ? o5 ? o4 ? o3 ? o2 ? o1 ? ? ? ? ? ? y ? ? ? ? ? ? t ? ? ? ? ? ? ? ? ? ? ? ? ? 16p4(p) nc : no connection input output package type 16p2n-a(fp)
aug. 1999 mitsubishi semiconductor M54519p/fp 7-unit 400ma darlington transistor array recommended operating conditions (unless otherwise noted, ta = ?0 ~ +75 c) v (br) ceo i i h fe v v parameter 0 8 5 0 40 0.5 limits min typ max symbol unit 0 0 400 200 30 ma v v ma 40 0.3 1000 1.3 1.0 0.8 6000 2.4 1.6 1.8 symbol unit parameter test conditions limits min typ + max v + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. ns ns 40 400 symbol unit parameter test conditions limits min typ max timing diagram note 1 test circuit pg 50 w c l r l measured device v o input output (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v p = 8v p-p (2) input-output conditions : r l = 25 w , v o = 10v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes v o v il output voltage ??input voltage ??input voltage i c v ih duty cycle p : no more than 8% fp : no more than 6% i c 2 400ma i c 2 200ma duty cycle p : no more than 30% fp : no more than 25% collector current (current per 1 cir- cuit when 7 circuits are coming on si- multaneously) collector-emitter breakdown voltage input current dc amplification factor i ceo = 100 m a v i = 8v, i c = 400ma v i = 5v, i c = 200ma v i = 17v v ce = 4v, i c = 400ma, ta = 25 c v ce (sat) collector-emitter saturation voltage turn-on time turn-off time t on t off c l = 15pf (note 1) electrical characteristics (unless otherwise noted, ta = ?0 ~ +75 c) switching characteristics (unless otherwise noted, ta = 25 c) ton 50% 50% 50% 50% toff input output
aug. 1999 mitsubishi semiconductor M54519p/fp 7-unit 400ma darlington transistor array typical characteristics thermal derating factor characteristics ambient temperature ta ( c) M54519fp M54519p power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 output saturation voltage collector current characteristics output saturation voltage v ce (sat) (v) 0 0 100 200 v i = 5v ta = e20 c ta = 25 c ta = 75 c 300 400 0.5 1.0 1.5 2.0 collector current ic (ma) duty-cycle-collector characteristics (M54519p) duty cycle (%) the collector current values represent the current per circuit. repeated frequency 3 10hz the value in the circle represents the value of the simultaneously-operated circuit. ta = 25 c the collector current values represent the current per circuit. repeated frequency 3 10hz the value in the circle represents the value of the simultaneously-operated circuit. ta = 25 c the collector current values represent the current per circuit. repeated frequency 3 10hz the value in the circle represents the value of the simultaneously-operated circuit. ta = 75 c the collector current values represent the current per circuit. repeated frequency 3 10hz the value in the circle represents the value of the simultaneously-operated circuit. ta = 75 c 0 0 100 200 300 400 500 a ? ? ? ? 20 40 60 80 100 collector current ic (ma) duty-cycle-collector characteristics (M54519p) duty cycle (%) 0 0 100 200 300 400 500 a ? ? ? ? 20 40 60 80 100 collector current ic (ma) duty-cycle-collector characteristics (M54519fp) duty cycle (%) 0 0 100 200 300 400 500 a ? ? ? ? 20 40 60 80 100 collector current ic (ma) duty-cycle-collector characteristics (M54519fp) duty cycle (%) 0 0 100 200 300 400 500 a ? ? ? ? 20 40 60 80 100 collector current ic (ma)
aug. 1999 mitsubishi semiconductor M54519p/fp 7-unit 400ma darlington transistor array dc amplification factor collector current characteristics collector current ic (ma) 10 1 10 3 v ce = 4v ta = 25 c ta = 75 c ta = e20 c 5 3 2 7 5 3 2 7 10 4 10 3 10 2 23 57 23 57 10 2 dc amplification factor h fe input characteristics input voltage v i (v) 0 0.5 ta = 25 c ta = 75 c ta = e20 c 1.0 1.5 2.0 0 5 101520 input current i i (ma) grounded emitter transfer characteristics input voltage v i (v) 0 v ce = 4v ta = 25 c ta = 75 c ta = e20 c 100 200 300 400 0 1234 collector current ic (ma)
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