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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD389 description c ollector-emitter breakdown voltage- : v (br)ceo = 60v(min) wide area of safe operation high power dissipation applications designed for medium power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 8 v i c collector current-continuous 3.0 a p c collector power dissipation @ t c =25 25 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD389 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 0.2a; l = 25mh 60 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.4a b 1.0 v v be( on ) base-emitter on voltage i c = 1a; v ce = 3v 1.4 v i cbo collector cutoff current v cb = 20v; i e = 0 30 a i ebo emitter cutoff current v eb = 8v; i c = 0 1.0 ma h fe-1 dc current gain i c = 0.1a; v ce = 3v 40 h fe-2 dc current gain i c = 1a; v ce = 3v 30 160 ? h fe- 2 classifications q p o 30-60 50-100 80-160 isc website www.iscsemi.cn 2 |
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