am4502 c byd microelectronics co., ltd. p & n-channel mosfet datasheet es-byd-wdzce03d-065 rev.a/0 page 1 of 8 general description the AM4502C uses advanc ed trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for used as dc-dc converters and power managements in portable and battery-powered products. features ? ? n-channel: v ds (v) =30v p-channel: v ds (v) =-30v ? low on-state resistance n-channel: r ds(on) = 16 m ? max (v gs = 10v, i d =10a) r ds(on) = 20 m ? max (v gs = 4.5v, i d = 8.4a) p-channel: r ds(on) = 23 m ? max (v gs = -10v, i d =-8.5a) r ds(on) = 33 m ? max (v gs =-4.5v, i d =-6.8a) ? fast switching speed absolute maximum ratings (ta = 25 ) symbol n-channel p-channel unit v dss 30 -30 v v gss 20 -25 v t a =25 10 -8.5 t a =70 8.1 -6.8 i d(pulse) 50 50 a i s 2.3 -2.1 a t a =25 2.1 2.1 t a =70 1.3 1.3 t ch t stg w parameter drain to source voltage gate to source voltage drain current (pulse) b drain current (dc) a a i d(dc) total power dissipation a contnuous source current (diode conduction) a 150 -55~+150 channel temperature p t operating junction and storage temperature range symbol maximum units t<=10sec 62.5 /w steady state 110 /w maximum junction-to-ambient r ja thermal resistance ratings parameter note a. mounted on fr4 board of 1?x1?. b. pulse width limited by maximum junction temperature caution: these values must not be ex ceeded under any conditions. www.datasheet.co.kr datasheet pdf - http://www..net/
AM4502C datasheet es-byd-wdzce03d-065 rev.a/0 page 2 of 8 byd microelectronics co., ltd. ordering information z part number: AM4502C z package: soic8 electrical characteristics (t a = 25 ) characteristic symbol test condition ch min typ max unit v ds =v gs ,i d =250ua n1 v ds =v gs ,i d =-250ua p-1 v ds =0v,v gs =20v n 100 v ds =0v,v gs =-20v p 100 v ds =24v,v gs =0v n1 v ds =-24v,v gs =0v p-1 v ds =5v,v gs =10v n20 v ds =-5v,v gs =-10v p-50 v gs =10v,i d =10a 16 v gs =4.5v,i d =8.4a 20 v gs =-10v,i d =-8.5a 23 v gs =-4.5v,i d =-6.8a 33 v ds =15v,i d =10a n40 v ds =-15v,i d =-9.5a p31 pulsed source current (body diode) i sm 5 a n12 p13 n3.3 p5.8 n4.5 p12 n 20 p15 n 9 p16 n 70 p62 n 20 p46 n-channel v dd =15v,v gs =10v,i d =1 a,r gen =25 p-channel v dd =-15v,v gs =-10v, i d =-1a, r gen =15 t d(off) v gss(off) on-state drain current gate-body leakage zero gate votage drain current i dss i d(on) i gss r ds(on) ns n-channel v ds =15v,v gs =4.5v, i d =10a p-channel v ds =-15v,v gs =-4.5v, i d =-10a g fs s nc q gd q gs q g t f t r t d(on) turn-off delay time fall-time forward transconductance gate-source charge turn-on delay time rise time gate-drain charge total gate charge m gate cut-off votage v na ua a drain -source on-restance n p www.datasheet.co.kr datasheet pdf - http://www..net/
AM4502C datasheet es-byd-wdzce03d-065 rev.a/0 page 3 of 8 byd microelectronics co., ltd. typical characteristics (25 unless noted) typical electrical char acteristics(p-channel) figure1. on-region characteristics 0 10 20 30 40 50 00.511.522.533.54 v ds drain-source voltage (v) i d drain current (a) 4.5v 3v 4v 3.5v 5v through 10v figure 2. o n-resistance with drain current 0 0.008 0.016 0.024 0.032 0.04 0 1020304050 i d drain current (a) r ds(on) resistance ( ? ) v gs =4.5v v gs =10v figure 3. on-resistance variations with te m p e r a t u r e 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j -junction t emperature( ) normalized r ds(on) v gs =10v i d =8.5a figure 4. on-resistance variation vs gate to s ource voltage 0 0.01 0.02 0.03 0.04 0.05 0.06 0246810 v gs gate to source voltage v r ds(on) on resistance ( ? ) www.datasheet.co.kr datasheet pdf - http://www..net/
AM4502C datasheet es-byd-wdzce03d-065 rev.a/0 page 4 of 8 byd microelectronics co., ltd. figure 5. transfer characteristics 0 10 20 30 40 50 60 0123456 vgs ga t e t o so ur ce vo lt a ge ( v) i d drain current (a) t a =-55 25 125 v d =v g figure 7. gate charge charateristic 0 2 4 6 8 10 0 5 10 15 20 25 30 qg total gate charge (nc) v gs gate to source voltage (v) v d =10v i d =8.5a figure 8.capacitance characteristics 0 500 1000 1500 2000 0 5 10 15 20 v ds drain-to-source voltage (v) c-capacitance (pf) c iss c oss c rss www.datasheet.co.kr datasheet pdf - http://www..net/
AM4502C datasheet es-byd-wdzce03d-065 rev.a/0 page 5 of 8 byd microelectronics co., ltd. typical electrical char acteristics(n-channel) figure1.on-region characteristics 0 10 20 30 40 50 0 0.5 1 1.5 2 v ds drain-source voltage (v) i d drain current (a) v gs =10 v 6v 3v 4v figure 2. on-resistance ws drain current 0.5 0.8 1.1 1.4 1.7 2 0 1020304050 i d drain current(a) r ds(on) normalized drain-sourc e on-resistance 4.5v 6.0v 10v figure 3. on-resistance variations with te m p e r a t u r e 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j -junction t emperature( ) normalized r ds(on) v gs =10v i d =10a figure 4. o n-resistance variation vs gate to source voltage 0 0.01 0.02 0.03 0.04 0.05 246810 v gs gate to source voltage v r ds(on) on resistance ( ? ) t a =25 i d =10a www.datasheet.co.kr datasheet pdf - http://www..net/
AM4502C datasheet es-byd-wdzce03d-065 rev.a/0 page 6 of 8 byd microelectronics co., ltd. figure 5. transfer characteristics 0 10 20 30 40 50 60 0123456 v gs gate to source voltage (v) i d drain current (a) t a =-55 25 125 v d =5v figure 7. gate charge characteristic 0 2 4 6 8 10 04812162024 qg total gate charge(nc) v gs gate to source voltage (v ) i d =10a figure 8.capacitance characteristics 0 400 800 1200 1600 0 5 10 15 20 25 30 v ds drain to source voltage (v) c-capacitance (pf) c iss c oss c rss f=1mhz v gs =0v figure 9. threshold vs ambient temperature 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t a -ambient t emperature ( ) v gs(th) gate to source voltage (v ) v ds =v gs i d =250ma www.datasheet.co.kr datasheet pdf - http://www..net/
AM4502C datasheet es-byd-wdzce03d-065 rev.a/0 page 7 of 8 byd microelectronics co., ltd. www.datasheet.co.kr datasheet pdf - http://www..net/
AM4502C datasheet es-byd-wdzce03d-065 rev.a/0 page 8 of 8 byd microelectronics co., ltd. package drawing soic8 unit (mm) d e e b a a1 l c e 1 dimensions d e a e1 a1 c l b e min. 4.80 3.80 1.35 5.80 0.100 0.19 0.500 0.380 0 o nom. 4.90 3.90 1.55 6.00 0.175 0.22 0.715 0.445 4 o max. 5.00 4.00 1.75 6.20 0.250 0.25 0.930 0.510 1.27 bsc 8 o www.datasheet.co.kr datasheet pdf - http://www..net/
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