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| Datasheet File OCR Text: |
| semitrans ? 3 trench igbt module skm 300gb126d preliminary data features ! " typical applications # $ # % & ' gb absolute maximum ratings ( ) * # symbol conditions values units igbt ' + ( ) * - ( . . " + - ) . * ( ) * / - . $ 0 . * ( . . $ " 1 2 " 1 2 ( ! " 3 . . $ 4 ' 5 ( . . . 6 4 7 ( . 6 ' 8 - ( . . + - ( ) * - . 9 inverse diode " : + - ) . * ( ) * ( ) . $ 0 . * - ; . $ " : 1 2 " : 1 2 ( ! " : 3 . . $ module " < 1 2 ' = ) . . $ + > 3 . ? ? ? @ - ) . * > 3 . ? ? ? ? @ - ( ) * $ - ? 3 . . . characteristics ( ) * # symbol conditions min. typ. max. units igbt 4 < = 4 " 0 $ ) ) 0 ) " ' 4 . ' + ( ) * . - . / $ . + ( ) * - - ( + - ( ) * . a - - 4 - ) + ( ) * / ) 3 ; b + - ( ) * ) ) 0 b < = " ( . . $ 4 - ) + ( ) * ? - ; ( - ) + - ( ) * ? ( ( 3 ) - ) : ( ) 4 . - 2 c - ( : - - : d 4 4 > 0 > @ ( . - 0 . . 1 4 + ( ) * / 0 e # < = ( 0 . 1 4 - ) b . . / ; " ( . . $ ( - f # < = 1 4 - ) b + - ( ) * ) . 4 5 - ) - . . / / f 1 < + > = " 4 g . - ( h i j skm 300gb126d 1 11-09-2006 sen ? by semikron semitrans ? 3 trench igbt module skm 300gb126d preliminary data features ! " typical applications # $ # % & ' gb characteristics symbol conditions min. typ. max. units inverse diode : " : ( . . $ 6 4 . + ( ) * ? - - 0 + - ( ) * ? - - 0 : . + ( ) * - - - + - ( ) * . 0 . a : + ( ) * / / ) b + - ( ) * 3 3 ) b " 1 1 2 " : ( . . $ + - ( ) * ( a . $ d # i # ( . . $ i 9 3 3 9 4 > - ) 6 . . - 0 f 1 < + > = k # # . ( ) h i j module l - ) ( . 1 m @ m ? > ( ) * . / ) b - ( ) * . ) b 1 < > = # . . / 0 h i j 2 n 2 / ) o 2 2 ( ) ) o / ( ) this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. skm 300gb126d 2 11-09-2006 sen ? by semikron semitrans ? 3 trench igbt module skm 300gb126d preliminary data features ! " typical applications # $ # % & ' gb z th symbol conditions values units z th(j-c)l 1 - 0 . n i j 1 ( / . n i j 1 / 0 ) n i j 1 3 - ) n i j - . . ) ; ( . . - / . . . ( 3 . . . . ( z th(j-c)d 1 - - ) . n i j 1 ( ; ) n i j 1 / ( ( n i j 1 3 / n i j - . . / / - ( . . - - / / . . . - ( 3 . . . - skm 300gb126d 3 11-09-2006 sen ? by semikron fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic skm 300gb126d 4 11-09-2006 sen ? by semikron fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 transient thermal impedance fig. 10 cal diode forward characteristic fig. 11 typ. cal diode peak reverse recovery current fig. 12 typ. cal diode peak reverse recovery charge skm 300gb126d 5 11-09-2006 sen ? by semikron ul recognized file 63 532 k ) 4 g k ) skm 300gb126d 6 11-09-2006 sen ? by semikron |
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