? semiconductor components industries, llc, 2006 april, 2006 ? rev. 5 1 publication order number: mjf122/d mjf122, MJF127 complementary power darlingtons for isolated package applications designed for general ? purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. features ? electrically similar to the popular tip122 and tip127 ? 100 v ceo(sus) ? 5.0 a rated collector current ? no isolating washers required ? reduced system cost ? high dc current gain ? 2000 (min) @ i c = 3 adc ? ul recognized, file #e69369, to 3500 v rms isolation ? pb ? free packages are available* ??????????????????? maximum ratings ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? collector ? emitter voltage ??? ??? ???? ???? ??? ??? ???????????? ???????????? ? base voltage ??? ??? ???? ???? ??? ??? ???????????? ???????????? ? base voltage ??? ??? ???? ???? ??? ??? ???????????? ? ?????????? ? ? ?????????? ? ???????????? rms isolation voltage (note 1) test no. 1 per figure 14 (for 1 sec, r.h. < 30%, test no. 2 per figure 15 t a = 25 c) test no. 3 per figure 16 ??? ? ? ? ? ? ? ??? v isol ???? ? ?? ? ? ?? ? ???? 4500 3500 1500 ??? ? ? ? ? ? ? ??? v rms ???????????? ???????????? ? continuous peak ??? ??? ???? ???? ??? ??? ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ? ?????????? ? ???????????? total power dissipation (note 2) @ t c = 25 c derate above 25 c ??? ? ? ? ??? p d ???? ? ?? ? ???? 30 0.24 ??? ? ? ? ??? w w/ c ???????????? ? ?????????? ? ???????????? total power dissipation @ t a = 25 c derate above 25 c ??? ? ? ? ??? p d ???? ? ?? ? ???? 2 0.016 ??? ? ? ? ??? w w/ c ???????????? ???????????? ??? ??? ???? ???? ? 65 to + 150 ??? ??? ??????????????????? ??????????????????? thermal characteristics ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? thermal resistance, junction ? to ? ambient ??? ??? ja ???? ???? ??? ??? c/w ???????????? ? ?????????? ? ???????????? thermal resistance, junction ? to ? case (note 2) ??? ? ? ? ??? r jc ???? ? ?? ? ???? 4.1 ??? ? ? ? ??? c/w ???????????? ???????????? ??? ??? ???? ???? ??? ??? c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. proper strike and creepage distance must be provided. 2. measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. http://onsemi.com marking diagram x = 2 or 7 g = pb ? free package a = assembly location y = year ww = work week complementary silicon power darlingtons 5.0 a, 100 v, 30 w to ? 220 case 221d ? 02 style 2 mjf12xg ayww *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information mjf122 to ? 220 50 units / rail mjf122g to ? 220 (pb ? free) 50 units / rail MJF127 to ? 220 50 units / rail MJF127g to ? 220 (pb ? free) 50 units / rail ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d.
mjf122, MJF127 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? ???? ???? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? ??????????????????????? ? ????????????????????? ? ??????????????????????? collector ? emitter sustaining voltage (note 3) (i c = 100 madc, i b = 0) ???? ? ?? ? ???? v ceo(sus) ???? ? ?? ? ???? 100 ??? ? ? ? ??? ? ??? ? ? ? ??? vdc ??????????????????????? ??????????????????????? ???? ???? ???? ???? ? ??? ??? 10 ??? ??? adc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector cutoff current (v cb = 100 vdc, i e = 0) ???? ? ?? ? ???? i cbo ???? ? ?? ? ???? ? ??? ? ? ? ??? 10 ??? ? ? ? ??? adc ??????????????????????? ??????????????????????? ???? ???? ???? ???? ? ??? ??? 2 ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 3) ??????????????????????? ? ????????????????????? ? ??????????????????????? dc current gain (i c = 0.5 adc, v ce = 3 vdc) dc current gain (i c = 3 adc, v ce = 3 vdc) ???? ? ?? ? ???? h fe ???? ? ?? ? ???? 1000 2000 ??? ? ? ? ??? ? ? ??? ? ? ? ??? ? ??????????????????????? ??????????????????????? collector ? emitter saturation voltage (i c = 3 adc, i b = 12 madc) collector ? emitter saturation voltage (i c = 5 adc, i b = 20 madc) ???? ???? ???? ???? ? ? ??? ??? 2 3.5 ??? ??? ??????????????????????? ??????????????????????? ? emitter on voltage (i c = 3 adc, v ce = 3 vdc) ???? ???? ???? ???? ? ??? ??? 2.5 ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????????? ??????????????????????? small ? signal current gain (i c = 3 adc, v ce = 4 vdc, f = 1 mhz) ???? ???? ???? ???? ??? ??? ? ??? ??? ??????????????????????? ? ????????????????????? ? ??????????????????????? output capacitance MJF127 (v cb = 10 vdc, i e = 0, f = 0.1 mhz) mjf122 ???? ? ?? ? ???? c ob ???? ? ?? ? ???? ? ? ??? ? ? ? ??? 300 200 ??? ? ? ? ??? pf 3. pulse test: pulse width 300 s, duty cycle 2%. figure 1. switching times test circuit v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c 0.1 0.7 10 0.5 0.3 25 5 i c , collector current (amp) t d @ v be(off) = 0 v t, time (s) 2 1 0.5 0.2 0.1 0.05 figure 2. typical switching times t s t f 0.3 3 0.2 1 0.07 0.7 37 pnp npn 120 8 k v 2 approx. +8 v v 1 approx. ?12 v 25 s r b 51 d 1 +4 v v cc ? 30 v r c scope tut t r , t f 10 ns duty cycle = 1% for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities. r b & r c varied to obtain desired current levels d 1 , must be fast recovery types, e.g., 1n5825 used above i b 100 ma msd6100 used below i b 100 ma t r 0
mjf122, MJF127 http://onsemi.com 3 p d , power dissipation (watts) 0 80 60 40 20 4 3 2 1 t a t c 0 figure 3. maximum power derating t, temperature ( c) 40 60 100 120 160 80 140 t c 20 t, time (ms) 0.01 0.1 0.5 10 20 50 100 200 500 5k 10 k 15 2 1 0.2 0.1 0.05 r(t), transient thermal single pulse r jc(t) = r(t) r jc t j(pk) ? t c = p (pk) r jc (t) resistance (normalized) figure 4. thermal response 0.5 0.3 0.03 0.02 0.2 1k 2k 30 300 3 0.3 3k t a v ce , collector?emitter voltage (volts) figure 5. maximum forward bias safe operating area 1 10 1 30 current limit secondary breakdown limit thermal limit @ t c = 25 c (single pulse) i c , collector current (amps) 0.1 23 50 3 0.3 10 0.2 d c t j = 150 c 1ms 5 ms 100 s 2 5 0.5 5 100 20 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. secondary breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
mjf122, MJF127 http://onsemi.com 4 v ce , collector?emitter voltage (volts) v ce , collector?emitter voltage (volts) figure 6. typical small ? signal current gain f, frequency (khz) 70 300 h fe , small?signal current gain 30 200 100 50 t c = 25 c v ce = 4 vdc i c = 3 adc figure 7. typical capacitance 10,000 v r , reverse voltage (volts) c, capacitance (pf) c ib c ob 0.1 200 100 1000 500 300 10 30 100 5 1 0.5 2000 3000 5000 10 50 0.2 2 20 t j = 25 c i c , collector current (amp) npn mjf122 pnp MJF127 figure 8. typical dc current gain 0.1 i c , collector current (amp) 200 0.2 0.5 3000 1000 10,000 h fe , dc current gain v ce = 4 v t j = 150 c 5000 0.3 1 25 c ?55 c 2000 0.7 3 20,000 300 500 510 h fe , dc current gain i b , base current (ma) 2.6 2.2 1.8 1.4 0.3 0.5 0.7 10 25 i c = 2 a 4 a 1 6 a t j = 25 c 3 1 20 30 i b , base current (ma) 2.6 2.2 1.8 1.4 3 1 figure 9. typical collector saturation region pnp npn pnp npn 1 1000 50 10 5 100 500 2 20 200 20 50 200 3000 1000 10,000 5000 2000 20,000 300 500 2 7 0.1 0.2 0.5 0.3 1 0.7 3 5 10 27 v ce = 4 v t j = 150 c 25 c ?55 c i c = 2 a 4 a 6 a 700 7000 3 7 0.3 0.5 0.7 10 25 12030 37 t j = 25 c
mjf122, MJF127 http://onsemi.com 5 v , temperature coefficients (mv/ c) 0.1 npn mjf122 pnp MJF127 10 ?1 0 +0.4 ?0.2 ?0.4 ?0.6 +0.6 +0.2 ?0.8 ?1 ?1.2 ?1.4 i c , collector current (amp) 0 *i c /i b h fe 3 ? 5 10 4 v be , base?emitter voltage (volts) 10 ?1 0 ? 0.4 , collector current (a) i c 10 3 10 2 10 1 10 0 +0.2 +0.4 +0.6 t j = 150 c 100 c reverse forward 25 c v ce = 30 v 10 5 ?0.6 ?0.2 +0.8 +1 +1.2 +1.4 10 4 v be , base?emitter voltage (volts) , collector current (a) i c 10 3 10 2 10 1 10 0 t j = 150 c 100 c reverse forward 25 c v ce = 30 v 10 5 ? 4 ? 3 ? 2 ? 1 vb for v be 25 c to 150 c * vc for v ce(sat) i c , collector current (amp) figure 10. typical ?on? voltages figure 11. typical temperature coefficients 0.1 i c , collector current (amp) 2 1.5 v, voltage (volts) 3 2.5 1 0.5 0.2 0.5 5 0.3 1 0.7 3 10 i c , collector current (amp) 2 1.5 v, voltage (volts) 3 2.5 1 0.5 t j = 25 c v be(sat) @ i c /i b = 250 v be @ v ce = 4 v t j = 25 c v be(sat) @ i c /i b = 250 v be @ v ce = 4 v v ce(sat) @ i c /i b = 250 v , temperature coefficient (mv c) 7 2 0.1 0.2 0.5 5 0.3 1 0.7 3 10 7 2 0.2 0.5 5 0.3 1 0.7 3 10 7 2 0.1 0.2 0.5 5 0.3 1 3 10 7 2 + 1 + 2 + 3 + 4 + 5 0 ? 5 ? 4 ? 3 ? 2 ? 1 + 1 + 2 + 3 + 4 + 5 ? 55 c to 25 c *i c /i b h fe 3 vb for v be * vc for v ce(sat) figure 12. typical collector cut ? off region v ce(sat) @ i c /i b = 250 25 c to 150 c ? 55 c to 25 c 25 c to 150 c ? 55 c to 25 c 25 c to 150 c ? 55 c to 25 c
mjf122, MJF127 http://onsemi.com 6 base emitter collector 8 k 120 base emitter collector 8 k 120 npn mjf122 pnp MJF127 figure 13. darlington schematic mounted fully isolated package leads heatsink 0.110" min figure 14. clip mounting position for isolation test number 1 *measurement made between leads and heatsink with all leads shorted together clip clip 0.099" min leads heatsink 0.099" min figure 15. clip mounting position for isolation test number 2 figure 16. screw mounting position for isolation test number 3 mounted fully isolated package mounted fully isolated package leads heatsink test conditions for isolation tests* 4?40 screw plain washer heatsink compression washer nut clip heatsink laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. the compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. destructive laboratory tests show that using a hex head 4 ? 40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. additional tests on slotted 4 ? 40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the pack- age. however, in order to positively ensure the package integrity of the fully isolated device, on semiconductor does not reco mmend exceeding 10 in . lbs of mounting torque under any mounting conditions. figure 17. typical mounting techniques* mounting information ** for more information about mounting power semiconductors see application note an1040.
mjf122, MJF127 http://onsemi.com 7 package dimensions to ? 220 case 221d ? 03 issue g dim a min max min max millimeters 0.625 0.635 15.88 16.12 inches b 0.408 0.418 10.37 10.63 c 0.180 0.190 4.57 4.83 d 0.026 0.031 0.65 0.78 f 0.116 0.119 2.95 3.02 g 0.100 bsc 2.54 bsc h 0.125 0.135 3.18 3.43 j 0.018 0.025 0.45 0.63 k 0.530 0.540 13.47 13.73 l 0.048 0.053 1.23 1.36 n 0.200 bsc 5.08 bsc q 0.124 0.128 3.15 3.25 r 0.099 0.103 2.51 2.62 s 0.101 0.113 2.57 2.87 u 0.238 0.258 6.06 6.56 ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d?01 thru 221d?02 obsolete, new standard 221d?03. style 2: pin 1. base 2. collector 3. emitter on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 mjf122/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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