? semiconductor components industries, llc, 2007 january, 2007 ? rev. 4 1 publication order number: NTMFS4108N/d NTMFS4108N power mosfet 30 v, 35 a, single n?channel, so?8 flat lead package features ? thermally and electrically enhanced packaging compatible with standard so?8 package footprint ? new package provides capability of inspection and probe after board mounting ? ultra low r ds(on) (at 4.5 v gs ), low gate resistance and low q g ? optimized for low side synchronous applications ? high speed switching capability applications ? notebook computer vcore applications ? network applications ? dc?dc converters maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss 30 v gate?to?source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d 22 a t a = 85 c 16 t 10 s t a = 25 c 35 power dissipation (note 1) steady state t a = 25 c p d 2.4 w t 10 s 6.25 continuous drain current (note 2) steady state t a = 25 c i d 13.5 a t a = 85 c 10 power dissipation (note 2) t a = 25 c p d 0.91 w power dissipation r jc (note 1) t c = 25 c p d 100 w pulsed drain current t p = 10 s i dm 203 a operating junction and storage temperature t j , t stg ?55 to 150 c continuous source current (body diode) i s 6.0 a single pulse drain?to?source avalanche energy (v dd = 30 v, v gs = 10 v, i pk = 30 a, l = 1 mh, r g = 25 ) e as 450 mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface?mounted on fr4 board using 1 sq. pad size (cu area = 1.127 sq. [1 oz] including traces). 2. surface?mounted on fr4 board using the minimum recommended pad size (cu area = 0.412 sq.). http://onsemi.com 30 v 2.7 m @ 4.5 v 1.8 m @ 10 v r ds(on) typ 35 a i d max v (br)dss g d s device package shipping ? ordering information NTMFS4108Nt1g so?8 fl (pb?free) 1500 tape / ree l so?8 flat lead case 488aa style 1 4108n = specific device code a = assembly location y = year ww = work week = pb?free package (note: microdot may be in either location) 1 marking diagram http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 4108n ayww s s s g d d NTMFS4108Nt3g so?8 fl (pb?free) 5000 tape / ree l d d
NTMFS4108N http://onsemi.com 2 thermal resistance ratings rating symbol max unit junction?to?case (drain) r jc 1.25 c/w junction?to?ambient ? steady state (note 3) r ja 53 junction?to?ambient ? t 10 s (note 3) r ja 20 junction?to?ambient ? steady state (note 4) r ja 138 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 21 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 24 v t j = 25 c 1.0 a t j = 125 c 25 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.0 2.5 v negative threshold temperature coefficient v gs(th) /t j 7.5 mv/ c drain?to?source on resistance r ds(on) v gs = 4.5 v, i d = 19 a 2.7 3.4 m v gs = 10 v, i d = 21 a 1.8 2.2 forward transconductance g fs v ds = 15 v, i d = 10 a 25 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 15 v 6000 pf output capacitance c oss 1200 reverse transfer capacitance c rss 700 total gate charge q g(tot) v gs = 4.5 v, v ds = 24 v, i d = 21 a 54 nc threshold gate charge q g(th) 11 gate?to?source charge q gs 16 gate?to?drain charge q gd 23 gate resistance r g 0.7 switching characteristics, v gs = 10 v (note 6) turn?on delay time t d(on) v gs = 4.5 v, v ds = 15 v, i d = 1.0 a, r g = 6.0 45 ns rise time t r 60 turn?off delay time t d(off) 70 fall time t f 140 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 6.0 a t j = 25 c 0.72 1.1 v t j = 125 c 0.65 reverse recovery time t rr v gs = 0 v, d is /d t = 100 a/ s, i s = 6.0 a 41 ns charge time t a 20 discharge time t b 21 reverse recovery charge q rr 45 nc 3. surface?mounted on fr4 board using 1 sq. pad size (cu area = 1.127 sq. [1 oz] including traces). 4. surface?mounted on fr4 board using the minimum recommended pad size (cu area = 0.412 sq.). 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
NTMFS4108N http://onsemi.com 3 typical performance curves t j = 125 c 0 10 2 v ds , drain?to?source voltage (volts) i d, drain current (amps) 0 figure 1. on?region characteristics 3 10 0 figure 2. transfer characteristics v gs , gate?to?source voltage (volts) figure 3. on?resistance vs. gate?to?source voltage r ds(on), drain?to?source resistance ( ) i d, drain current (amps) figure 4. on?resistance vs. drain current and gate voltage i d, drain current (amps) ?50 0 ?25 25 1.5 1.7 1.1 0.9 0.7 50 150 figure 5. on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c t j = ?55 c 75 t j = 25 c i d = 10 a v gs = 10 v r ds(on), drain?to?source resistance (normalized) t j = 25 c r ds(on), drain?to?source resistance ( ) v gs = 10 v 10 figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (volts) 21 v gs = 0 v i dss , leakage (na) t j = 150 c t j = 100 c 3.0 v 3.2 v v gs = 4.5 v v ds 10 v 12 27 2.9 v 4 3 0 40 v gs = 4 v to 10 v 20 40 125 100 5 10 0.006 v gs , gate?to?source voltage (volts) 0.002 0.003 0.004 0.007 26 0.001 4 0.003 0.001 0.0035 0.002 0.0015 0.0025 1000 3 610 12 53 0 10 15 1.3 15 20 4 100000 3.4 v 3.5 v 0.005 825 20 30 30 i d = 10 a t j = 25 c 0 0.0005 10000 100 24 18 69 8 3.1 v 3.3 v 1.4 1.6 1.0 0.8 1.2
NTMFS4108N http://onsemi.com 4 typical performance curves figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge 1 0 v sd , source?to?drain voltage (volts) figure 9. resistive switching time variation vs. gate resistance i s , source current (amps) v gs = 0 v t j = 25 c 5 figure 10. diode forward voltage vs. current 0.8 0.6 4 3 drain?to?source voltage (volts) r g , gate resistance (ohms) 1 10 100 100 10 t, time (ns) v dd = 15 v i d = 1.0 a v gs = 4.5 v t r t d(on) 1000 t f t d(off) 2 6 v gs , gate?to?source voltage (volts) 0 3 0 q g , total gate charge (nc) 5 4 10 20 30 i d = 21 a t j = 25 c v gs q gs 60 q gd qt 2 1 c, capacitance (pf) 1000 0510 c iss c oss c rss 15 20 0 2000 3000 4000 5000 6000 30 t j = 25 c 50 40 7 0.4 0.7 0.5 7000 8000 25 v ds , drain?to?source voltage (volts) 18 0 30 24 12 6 v ds 1 10 100 1000 0.1 1 10 100 v gs = 20 v single pulse t c = 25 c r ds(on) limit thermal limit package limit 10 s 100 s 1 ms 10 ms dc i d , drain current (a) v ds , drain?to?source voltage (v) figure 11. maximum rated forward biased safe operating area
NTMFS4108N http://onsemi.com 5 package dimensions so?8 flat lead (dfn6) case 488aa?01 issue b style 1: pin 1. source 2. source 3. source 4. gate 5. drain 6. drain m 3.00 3.40 0 ??? 3.80 12 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 5 6 top view side view bottom view d1 e1 d e 2 2 b a 0.20 c 0.20 c 2 x 2 x dim min nom millimeters a 0.90 0.99 a1 0.00 ??? b 0.33 0.41 c 0.23 0.28 d 5.15 bsc d1 4.50 4.90 d2 3.50 ??? e 6.15 bsc e1 5.50 5.80 e2 3.45 ??? e 1.27 bsc g 0.51 0.61 k 0.51 ??? l 0.51 0.61 l1 0.05 0.17 a 0.10 c 0.10 c detail a 14 6 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 e 3 x c 4 x c seating plane 5 max 1.20 0.05 0.51 0.33 5.10 4.22 6.10 4.30 0.71 ??? 0.71 0.20 m
NTMFS4108N http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTMFS4108N/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
|
