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low noise pseudomorphic hemt in a surface mount plastic package technical data ATF-35143 features ? lead-free option available ? low noise figure ? excellent uniformity in product specifications ? low cost surface mount small plastic package sot-343 (4 lead sc-70) ? tape-and-reel packaging option available specifications 1.9 ghz; 2 v, 15 ma (typ.) ? 0.4 db noise figure ? 18 db associated gain ? 11 dbm output power at 1 db gain compression ? 21 dbm output 3 rd order intercept applications ? low noise amplifier for cellular/pcs handsets ? lna for wlan, wll/rll, leo, and mmds applications ? general purpose discrete phemt for other ultra low noise applications surface mount package sot-343 description agilents ATF-35143 is a high dynamic range, low noise, phemt housed in a 4-lead sc-70 (sot-343) surface mount plastic package. based on its featured perfor- mance, ATF-35143 is suitable for applications in cellular and pcs base stations, leo systems, mmds, and other systems requir- ing super low noise figure with good intercept in the 450 mhz to 10 ghz frequency range. other phemt devices in this family are the atf-34143 and the atf-33143. the typical specifica- tions for these devices at 2 ghz are shown in the table below: pin connections and package marking part no. gate width bias point nf (db) ga (db) oip3 (dbm) atf-33143 1600 4 v, 80 ma 0.5 15.0 33.5 atf-34143 800 4 v, 60 ma 0.5 17.5 31.5 ATF-35143 400 2 v, 15 ma 0.4 18.0 21.0 gate 5px source drain source note: top view. package marking provides orientation and identification. 5p = device code x = date code character. a new character is assigned for each month, year. attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class a) esd human body model (class 1) refer to agilent application note a004r: electrostatic discharge damage and control.
2 ATF-35143 absolute maximum ratings [1] absolute symbol parameter units maximum v ds drain - source voltage [2] v 5.5 v gs gate - source voltage [2] v-5 v gd gate drain voltage [2] v-5 i ds drain current [2] ma i dss [3] p diss total power dissipation [4] mw 300 p in max rf input power dbm 14 t ch channel temperature c 160 t stg storage temperature c -65 to 160 jc thermal resistance [5] c/w 310 notes: 1. operation of this device above any one of these parameters may cause permanent damage. 2. assumes dc quiesent conditions. 3. v gs = 0 v 4. source lead temperature is 25 c. derate 3.2 mw/ c for t l > 67 c. 5. thermal resistance measured using 150 c liquid crystal measurement method. product consistency distribution charts [7, 8] v ds (v) figure 1. typical pulsed i-v curves [6] . (v gs = -0.2 v per step) i ds (ma) 02 4 68 120 100 80 60 40 20 0 +0.6 v 0 v ?.6 v oip3 (dbm) figure 2. oip3 @ 2 ghz, 2 v, 15 ma. lsl=19.0, nominal=20.9, usl=23.0 19 21 20 23 22 24 120 100 80 60 40 20 0 -3 std +3 std cpk = 1.73 std = 0.35 nf (db) figure 3. nf @ 2 ghz, 2 v, 15 ma. lsl=0.2, nominal=0.37, usl=0.7 0.2 0.4 0.3 0.6 0.5 0.7 200 160 120 80 40 0 -3 std +3 std cpk = 3.7 std = 0.03 gain (db) figure 4. gain @ 2 ghz, 2 v, 15 ma. lsl=16.5, nominal=18.0, usl=19.5 16 17 18 19 20 160 120 80 40 0 -3 std +3 std cpk = 2.75 std = 0.17 notes: 6. under large signal conditions, v gs may swing positive and the drain current may exceed i dss . these conditions are acceptable as long as the maximum p diss and p in max ratings are not exceeded. 7. distribution data sample size is 450 samples taken from 9 different wafers. future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. 8. measurements made on production test board. this circuit represents a trade-off between an optimal noise match and a realizeable match based on production test requirements. circuit losses have been de- embedded from actual measurements.
3 figure 5. block diagram of 2 ghz production test board used for noise figure, associated gain, p 1db , and oip3 measure- ments. this circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements. circuit losses have been de-embedded from actual measurements. input 50 ohm transmission line including gate bias t (0.5 db loss) input matching circuit _mag = 0.66 _ang = 5 (0.4 db loss) dut 50 ohm transmission line including drain bias t (0.5 db loss) output ATF-35143 electrical specifications t a = 25 c, rf parameters measured in a test circuit for a typical device symbol parameters and test conditions units min. typ. [2] max. i dss [1] saturated drain current v ds = 1.5 v, v gs = 0 v ma 40 65 80 v p [1] pinchoff voltage v ds = 1.5 v, i ds = 10% of i dss v -0.65 -0.5 -0.35 i d quiescent bias current v gs = 0.45 v, v ds = 2 v ma 15 g m [1] transconductance v ds = 1.5 v, g m = i dss /v p mmho 90 120 i gdo gate to drain leakage current v gd = 5 v a 250 i gss gate leakage current v gd = v gs = -4 v a 10 150 f = 2 ghz v ds = 2 v, i ds = 15 ma db 0.4 0.7 nf noise figure [3] v ds = 2 v, i ds = 5 ma 0.5 0.9 f = 900 mhz v ds = 2 v, i ds = 15 ma db 0.3 v ds = 2 v, i ds = 5 ma 0.4 f = 2 ghz v ds = 2 v, i ds = 15 ma db 16.5 18 19.5 g a associated gain [3] v ds = 2 v, i ds = 5 ma 14 16 18 f = 900 mhz v ds = 2 v, i ds = 15 ma db 20 v ds = 2 v, i ds = 5 ma 18 output 3 rd order f = 2 ghz v ds = 2 v, i ds = 15 ma dbm 19 21 oip3 intercept point [4, 5] v ds = 2 v, i ds = 5 ma 14 f = 900 mhz v ds = 2 v, i ds = 15 ma dbm 19 v ds = 2 v, i ds = 5 ma 14 1 db compressed f = 2 ghz v ds = 2 v, i dsq = 15 ma dbm 10 p 1db intercept point [4] v ds = 2 v, i dsq = 5 ma 8 f = 900 mhz v ds = 2 v, i dsq = 15 ma dbm 9 v ds = 2 v, i dsq = 5 ma 9 notes: 1. guaranteed at wafer probe level 2. typical value determined from a sample size of 450 parts from 9 wafers. 3. 2 v 5 ma min/max data guaranteed via the 2 v 15 ma production test. 4. measurements obtained using production test board described in figure 5. 5. p out = -10 dbm per tone
4 ATF-35143 typical performance curves notes: 1. measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure a t 2 v 15 ma bias. this circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test board requirements. circuit losses have been de-embedded from actual measurements. 2. p 1db measurements are performed with passive biasing. quiescent drain current, i dsq , is set with zero rf drive applied. as p 1db is approached, the drain current may increase or decrease depending on frequency and dc bias point. at lower values of i dsq the device is running closer to class b as power output approaches p 1db . this results in higher p 1db and higher pae (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. as an example, at a v ds = 4 v and i dsq = 5 ma, i d increases to 30 ma as a p 1db of +15 dbm is approached. i dsq (ma) figure 6. oip3 and p 1db vs. bias at 2 ghz. [1,2] oip3, p 1db (dbm) 060 30 25 20 15 10 5 0 20 10 40 50 30 2 v 3 v 4 v oip3 p 1db i dsq (ma) figure 7. oip3 and p 1db vs. bias at 900 mhz. [1,2] oip3, p 1db (dbm) 060 20 10 40 50 30 2 v 3 v 4 v oip3 p 1db 30 25 20 15 10 5 i dsq (ma) figure 8. nf and g a vs. bias at 2 ghz. [1] g a (db) 060 20 10 40 50 30 2 v 3 v 4 v g a nf 20 19 18 17 16 15 nf (db) 2.5 2 1.5 1 0.5 0 i dsq (ma) figure 9. nf and g a vs. bias at 900 mhz. [1] g a (db) 060 20 10 40 50 30 2 v 3 v 4 v g a nf 24 22 20 18 16 14 nf (db) 2.5 2 1.5 1 0.5 0 i ds (ma) figure 10. p 1db vs. bias (active bias) tuned for nf @ 2 v, 15 ma at 2 ghz. [1] p 1db (dbm) 080 25 20 15 10 5 0 -5 20 40 60 2 v 3 v 4 v i ds (ma) figure 11. p 1db vs. bias (active bias) tuned for nf @ 2 v, 15 ma at 900 mhz. [1] p 1db (dbm) 080 20 40 60 2 v 3 v 4 v 20 15 10 5 0 -5
5 ATF-35143 typical performance curves, continued notes: 1. measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 v 15ma bias. this circuit represents a tr ade-off between optimal noise match, maximum gain match and a realizable match based on production test requirements. circuit losses ha ve been de-embedded from actual measurements. 2. p 1db measurements are performed with passive biasing. quiescent drain current, i dsq , is set with zero rf drive applied. as p 1db is approached, the drain current may increase or decrease depending on frequency and dc bias point. at lower values of i dsq the device is running closer to class b as power output approaches p 1db . this results in higher p 1db and higher pae (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. as an example, at a v ds = 4 v and i dsq = 5 ma, i d increases to 30 ma as a p 1db of +15 dbm is approached. frequency (ghz) figure 12. f min vs. frequency and current at 2 v. f min (db) 010 1.50 1.25 1.00 0.75 0.50 0.25 0 4 28 6 5 ma 15 ma 30 ma frequency (ghz) figure 13. associated gain vs. frequency and current at 2 v. ga (db) 010 25 20 15 10 5 4 28 6 5 ma 15 ma 30 ma frequency (ghz) figure 14. f min and g a vs. frequency and temperature, v ds = 2 v, i ds = 15 ma. g a (db) 08 246 25 c -40 c 85 c 22 20 18 16 14 12 i ds (ma) figure 16. oip3, p 1db , nf and gain vs. bias [1] (active bias, 2 v, 3.9 ghz). oip3, p 1db (dbm), gain (db) 080 20 40 60 p 1db oip3 gain nf 25 20 15 10 5 0 nf (db) 2.5 2 1.5 1 0.5 0 nf (db) 1.0 0.8 0.6 0.4 0.2 0 i ds (ma) figure 17. oip3, p 1db , nf and gain vs. bias [1] (active bias, 2 v, 5.8 ghz). oip3, p 1db (dbm), gain (db) 080 20 40 60 p 1db oip3 gain nf 25 20 15 10 5 0 -5 nf (db) 3 2.5 2 1.5 1 0.5 0 frequency (ghz) figure 15. oip3 and p 1db vs. frequency and temperature [1,2] , v ds = 2 v, i ds = 15 ma. oip3, p 1db (dbm) 08 246 25 c -40 c 85 c 25 20 15 10 5
6 ATF-35143 typical noise parameters v ds = 2 v, i ds = 5 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.10 0.91 6.4 0.22 19.3 0.9 0.12 0.87 15.0 0.22 17.9 1.0 0.14 0.86 17.2 0.22 17.5 1.5 0.20 0.81 28.0 0.22 16.3 1.8 0.23 0.78 33.4 0.21 15.8 2.0 0.27 0.76 38.8 0.21 15.4 2.5 0.33 0.71 50.0 0.19 14.7 3.0 0.39 0.66 61.9 0.17 14.0 4.0 0.52 0.58 87.2 0.13 12.7 5.0 0.64 0.52 114.4 0.09 11.5 6.0 0.77 0.47 143.2 0.06 10.4 7.0 0.89 0.43 173.5 0.05 9.5 8.0 1.02 0.41 -155.2 0.07 8.7 9.0 1.14 0.40 -122.9 0.13 8.0 10.0 1.27 0.41 -90.1 0.24 7.5 frequency (ghz) figure 18. msg/mag and |s 21 | 2 vs. frequency at 2 v, 5 ma. msg/mag and s 21 (db) 020 25 20 15 10 5 0 -5 51015 msg mag s 21 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measur e- ments a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. ATF-35143 typical scattering parameters, v ds = 2 v, i ds = 5 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.50 0.99 -16.90 13.34 4.64 166.04 -31.70 0.026 77.91 0.73 -12.47 22.52 0.75 0.98 -26.37 13.29 4.62 157.78 -28.18 0.039 71.12 0.72 -17.53 20.83 1.00 0.97 -34.76 13.16 4.55 150.72 -25.85 0.051 65.76 0.71 -23.33 19.50 1.50 0.94 -50.59 12.83 4.38 137.02 -22.73 0.073 54.85 0.68 -34.88 17.78 1.75 0.91 -58.26 12.66 4.30 130.38 -21.62 0.083 49.69 0.67 -40.49 17.13 2.00 0.90 -65.74 12.44 4.19 123.90 -20.72 0.092 44.45 0.65 -46.03 16.58 2.50 0.85 -80.62 12.04 4.00 111.27 -19.33 0.108 34.61 0.62 -56.68 15.69 3.00 0.81 -95.48 11.61 3.81 99.08 -18.27 0.122 25.21 0.59 -66.71 14.94 4.00 0.72 -125.99 10.71 3.43 75.75 -17.08 0.140 6.95 0.52 -85.11 13.89 5.00 0.66 -156.09 9.79 3.09 53.63 -16.48 0.150 -9.83 0.45 -102.71 13.13 6.00 0.62 174.97 8.93 2.80 32.77 -16.14 0.156 -25.73 0.38 -120.16 12.53 7.00 0.60 145.61 8.06 2.53 12.43 -16.08 0.157 -41.00 0.31 -138.01 12.07 8.00 0.60 118.39 7.20 2.29 -7.12 -16.31 0.153 -54.14 0.25 -157.10 11.75 9.00 0.62 93.15 6.26 2.06 -26.14 -16.59 0.148 -67.05 0.20 -178.27 11.19 10.00 0.66 71.31 5.43 1.87 -44.14 -16.89 0.143 -78.09 0.16 157.62 9.63 11.00 0.70 50.91 4.58 1.69 -62.85 -17.14 0.139 -88.99 0.14 121.82 8.81 12.00 0.72 31.04 3.64 1.52 -81.42 -17.52 0.133 -100.38 0.17 82.33 7.87 13.00 0.74 11.26 2.56 1.34 -99.46 -18.13 0.124 -111.06 0.22 53.17 6.79 14.00 0.76 -3.08 1.45 1.18 -115.94 -18.79 0.115 -119.00 0.28 27.32 5.86 15.00 0.82 -14.26 0.43 1.05 -132.24 -19.25 0.109 -127.12 0.34 6.01 5.89 16.00 0.82 -26.64 -0.72 0.92 -149.24 -19.58 0.105 -135.42 0.42 -10.69 4.84 17.00 0.84 -38.94 -1.83 0.81 -164.44 -19.74 0.103 -143.49 0.49 -22.32 4.62 18.00 0.86 -54.78 -3.02 0.71 179.28 -20.18 0.098 -152.36 0.56 -35.90 4.04
7 ATF-35143 typical noise parameters v ds = 2 v, i ds = 10 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.10 0.88 5.0 0.15 20.5 0.9 0.11 0.84 14.0 0.15 19.0 1.0 0.12 0.83 16.0 0.15 18.6 1.5 0.17 0.77 26.0 0.15 17.5 1.8 0.20 0.74 31.9 0.15 16.9 2.0 0.23 0.71 37.3 0.14 16.4 2.5 0.29 0.66 48.6 0.14 15.7 3.0 0.34 0.60 60.6 0.12 15.0 4.0 0.46 0.52 86.8 0.12 13.6 5.0 0.58 0.45 115.3 0.08 12.4 6.0 0.69 0.40 145.8 0.05 11.3 7.0 0.81 0.37 177.7 0.05 10.3 8.0 0.92 0.35 -149.3 0.07 9.5 9.0 1.04 0.35 -115.6 0.12 8.8 10.0 1.16 0.37 -81.8 0.22 8.3 frequency (ghz) figure 19. msg/mag and |s 21 | 2 vs. frequency at 2 v, 10 ma. msg/mag and s 21 (db) 020 51015 msg mag s 21 30 25 20 15 10 5 0 -5 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at sixteen different impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. ATF-35143 typical scattering parameters, v ds = 2 v, i ds = 10 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.50 0.99 -18.75 15.89 6.23 164.76 -32.40 0.024 77.63 0.63 -14.09 24.14 0.75 0.97 -29.11 15.79 6.16 155.98 -28.87 0.036 70.58 0.61 -19.69 22.30 1.00 0.95 -38.28 15.61 6.03 148.42 -26.56 0.047 64.88 0.60 -26.10 21.08 1.50 0.91 -55.52 15.17 5.73 133.92 -23.61 0.066 54.16 0.57 -38.73 19.39 1.75 0.89 -63.78 14.92 5.57 127.01 -22.62 0.074 49.11 0.56 -44.79 18.75 2.00 0.86 -71.82 14.65 5.40 120.27 -21.72 0.082 44.08 0.54 -50.70 18.19 2.50 0.81 -87.59 14.11 5.08 107.36 -20.35 0.096 34.60 0.51 -61.95 17.23 3.00 0.76 -103.22 13.54 4.76 95.04 -19.41 0.107 25.71 0.47 -72.47 16.48 4.00 0.66 -134.81 12.40 4.17 71.95 -18.27 0.122 9.04 0.41 -91.47 15.34 5.00 0.61 -165.34 11.29 3.67 50.43 -17.65 0.131 -5.97 0.34 -110.05 14.47 6.00 0.58 165.88 10.27 3.26 30.28 -17.33 0.136 -20.15 0.27 -129.24 13.80 7.00 0.57 137.00 9.27 2.91 10.68 -17.14 0.139 -33.84 0.21 -150.49 13.21 8.00 0.58 110.78 8.33 2.61 -8.09 -17.14 0.139 -45.60 0.17 -174.77 12.73 9.00 0.61 86.75 7.32 2.32 -26.38 -17.20 0.138 -57.65 0.13 154.01 10.69 10.00 0.65 66.25 6.44 2.10 -43.90 -17.20 0.138 -68.22 0.11 118.18 9.85 11.00 0.69 46.88 5.54 1.89 -61.97 -17.27 0.137 -79.30 0.14 78.36 9.16 12.00 0.72 27.76 4.56 1.69 -79.90 -17.39 0.135 -90.87 0.19 49.57 8.34 13.00 0.74 8.62 3.45 1.49 -97.18 -17.79 0.129 -102.19 0.26 29.95 7.35 14.00 0.77 -5.28 2.33 1.31 -112.92 -18.20 0.123 -110.80 0.33 9.45 6.51 15.00 0.82 -16.03 1.29 1.16 -128.66 -18.56 0.118 -120.09 0.39 -7.98 6.51 16.00 0.82 -28.32 0.19 1.02 -144.87 -18.79 0.115 -129.92 0.45 -22.30 5.48 17.00 0.84 -40.43 -0.87 0.91 -159.49 -18.79 0.115 -139.60 0.51 -32.23 5.24 18.00 0.86 -56.14 -1.99 0.80 -175.19 -19.33 0.108 -149.17 0.57 -44.43 4.72
8 ATF-35143 typical noise parameters v ds = 2 v, i ds = 15 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.10 0.88 4.5 0.19 20.9 0.9 0.13 0.83 13.1 0.17 19.4 1.0 0.14 0.82 15.3 0.16 19.2 1.5 0.19 0.76 26.1 0.15 17.9 1.8 0.22 0.72 32.6 0.15 17.3 2.0 0.23 0.70 36.9 0.14 17.0 2.5 0.29 0.64 48.5 0.12 16.2 3.0 0.34 0.58 60.9 0.07 15.4 4.0 0.45 0.49 87.9 0.13 14.1 5.0 0.56 0.42 117.4 0.07 12.8 6.0 0.67 0.37 149.0 0.05 11.7 7.0 0.79 0.34 -178.1 0.05 10.8 8.0 0.90 0.33 -144.3 0.07 9.9 9.0 1.01 0.34 -110.2 0.13 9.2 10.0 1.12 0.36 -76.3 0.23 8.6 frequency (ghz) figure 20. msg/mag and |s 21 | 2 vs. frequency at 2 v, 15 ma. msg/mag and s 21 (db) 020 51015 msg mag s 21 30 25 20 15 10 5 0 -5 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atf np5 test system. from these measure - ments a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. ATF-35143 typical scattering parameters, v ds = 2 v, i ds = 15 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.50 0.99 -19.75 17.02 7.10 164.04 -32.77 0.023 77.60 0.57 -14.99 24.89 0.75 0.97 -30.58 16.90 7.00 154.98 -29.37 0.034 70.54 0.55 -20.86 23.05 1.00 0.95 -40.15 16.69 6.83 147.18 -27.13 0.044 64.80 0.54 -27.61 21.91 1.50 0.90 -58.08 16.18 6.44 132.28 -24.15 0.062 54.23 0.51 -40.74 20.17 1.75 0.87 -66.65 15.90 6.23 125.22 -23.10 0.070 49.25 0.49 -46.95 19.53 2.00 0.84 -74.93 15.59 6.02 118.41 -22.27 0.077 44.36 0.48 -53.06 18.93 2.50 0.79 -91.13 14.97 5.61 105.38 -20.92 0.090 35.36 0.44 -64.59 17.95 3.00 0.73 -107.08 14.34 5.21 93.08 -20.00 0.100 26.85 0.41 -75.32 17.17 4.00 0.64 -139.07 13.09 4.51 70.17 -18.94 0.113 11.15 0.35 -94.59 16.01 5.00 0.59 -169.70 11.90 3.93 49.03 -18.27 0.122 -2.96 0.29 -113.89 15.09 6.00 0.56 161.74 10.81 3.47 29.27 -17.79 0.129 -16.43 0.23 -134.46 14.30 7.00 0.56 133.19 9.77 3.08 10.04 -17.59 0.132 -29.47 0.17 -158.65 13.68 8.00 0.57 107.56 8.78 2.75 -8.35 -17.46 0.134 -40.80 0.14 172.14 12.29 9.00 0.60 84.16 7.75 2.44 -26.29 -17.39 0.135 -52.63 0.11 134.01 10.74 10.00 0.64 64.19 6.86 2.20 -43.56 -17.33 0.136 -63.33 0.12 95.85 9.99 11.00 0.68 45.46 5.93 1.98 -61.33 -17.27 0.137 -74.77 0.16 63.20 9.34 12.00 0.72 26.66 4.93 1.76 -78.94 -17.27 0.137 -86.46 0.22 40.01 8.57 13.00 0.74 7.70 3.80 1.55 -95.93 -17.59 0.132 -98.11 0.29 23.11 7.62 14.00 0.77 -5.93 2.68 1.36 -111.53 -17.92 0.127 -107.51 0.36 3.55 6.79 15.00 0.82 -16.54 1.63 1.21 -126.76 -18.20 0.123 -117.16 0.41 -12.09 6.76 16.00 0.82 -28.76 0.54 1.06 -142.70 -18.49 0.119 -127.03 0.47 -26.21 5.81 17.00 0.84 -40.79 -0.49 0.95 -157.02 -18.49 0.119 -137.06 0.53 -35.57 5.55 18.00 0.86 -56.40 -1.60 0.83 -172.47 -18.94 0.113 -147.50 0.58 -47.29 5.06
9 ATF-35143 typical noise parameters v ds = 2 v, i ds = 30 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.11 0.87 2.7 0.18 21.6 0.9 0.15 0.81 12.1 0.17 20.2 1.0 0.16 0.80 14.5 0.16 19.9 1.5 0.22 0.73 26.3 0.15 18.7 1.8 0.25 0.69 33.4 0.15 18.0 2.0 0.27 0.66 38.1 0.14 17.7 2.5 0.33 0.60 50.6 0.13 17.0 3.0 0.39 0.54 64.2 0.12 16.2 4.0 0.52 0.45 94.0 0.10 14.8 5.0 0.64 0.39 126.5 0.07 13.5 6.0 0.77 0.34 160.6 0.05 12.4 7.0 0.90 0.33 -164.7 0.06 11.4 8.0 1.02 0.33 -130.3 0.10 10.5 9.0 1.15 0.36 -97.5 0.18 9.7 10.0 1.28 0.40 -67.0 0.30 9.1 frequency (ghz) figure 21. msg/mag and |s 21 | 2 vs. frequency at 2 v, 30 ma. msg/mag and s 21 (db) 020 51015 msg mag s 21 30 25 20 15 10 5 0 -5 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atf np5 test system. from these measure - ments a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. ATF-35143 typical scattering parameters, v ds = 2 v, i ds = 30 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.50 0.99 -20.95 18.17 8.10 163.18 -33.56 0.021 77.39 0.49 -15.99 25.87 0.75 0.96 -32.34 18.02 7.96 153.79 -30.17 0.031 70.55 0.47 -22.00 24.10 1.00 0.94 -42.36 17.77 7.73 145.67 -27.96 0.040 65.08 0.46 -29.03 22.86 1.50 0.88 -61.09 17.18 7.22 130.36 -25.04 0.056 54.79 0.43 -42.64 21.11 1.75 0.85 -69.98 16.85 6.96 123.20 -24.01 0.063 50.12 0.41 -48.96 20.42 2.00 0.82 -78.53 16.50 6.69 116.28 -23.22 0.069 45.58 0.39 -55.19 19.86 2.50 0.76 -95.14 15.81 6.17 103.17 -21.94 0.080 37.15 0.36 -66.91 18.87 3.00 0.70 -111.48 15.11 5.69 90.88 -21.01 0.089 29.29 0.34 -77.74 18.06 4.00 0.61 -143.89 13.73 4.86 68.24 -19.83 0.102 14.76 0.28 -97.29 16.78 5.00 0.56 -174.55 12.46 4.20 47.48 -19.02 0.112 1.63 0.23 -117.24 15.74 6.00 0.55 157.19 11.31 3.68 28.10 -18.49 0.119 -10.98 0.17 -139.78 14.90 7.00 0.55 129.18 10.22 3.24 9.28 -18.13 0.124 -23.67 0.13 -169.09 14.17 8.00 0.56 104.19 9.20 2.88 -8.75 -17.79 0.129 -34.72 0.11 155.22 11.98 9.00 0.60 81.48 8.15 2.56 -26.37 -17.59 0.132 -46.33 0.11 112.23 10.82 10.00 0.64 62.07 7.24 2.30 -43.37 -17.33 0.136 -57.43 0.13 77.30 10.15 11.00 0.68 43.83 6.29 2.06 -60.90 -17.20 0.138 -68.78 0.18 51.74 9.51 12.00 0.72 25.46 5.27 1.84 -78.22 -17.14 0.139 -81.32 0.24 32.67 8.77 13.00 0.74 6.81 4.14 1.61 -94.88 -17.33 0.136 -93.11 0.31 17.81 7.87 14.00 0.77 -6.74 3.01 1.41 -110.07 -17.65 0.131 -103.06 0.38 0.45 7.08 15.00 0.82 -17.21 1.94 1.25 -125.15 -17.86 0.128 -112.88 0.43 -15.44 7.06 16.00 0.83 -29.31 0.87 1.11 -140.80 -18.06 0.125 -123.55 0.49 -29.37 6.13 17.00 0.85 -41.30 -0.15 0.98 -154.83 -18.13 0.124 -134.43 0.54 -38.55 5.89 18.00 0.87 -56.87 -1.24 0.87 -170.03 -18.56 0.118 -144.88 0.60 -49.70 5.39
10 ATF-35143 typical noise parameters v ds = 3 v, i ds = 10 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.12 0.87 4.7 0.21 20.0 0.9 0.16 0.82 13.2 0.19 19.0 1.0 0.17 0.81 15.3 0.19 18.8 1.5 0.22 0.75 25.9 0.17 17.8 1.8 0.26 0.71 32.3 0.16 17.2 2.0 0.28 0.68 36.5 0.16 16.7 2.5 0.33 0.62 47.7 0.14 15.9 3.0 0.39 0.57 59.6 0.13 15.1 4.0 0.49 0.49 85.4 0.10 13.7 5.0 0.60 0.43 113.6 0.08 12.5 6.0 0.71 0.38 143.7 0.05 11.4 7.0 0.81 0.36 175.6 0.05 10.4 8.0 0.92 0.34 -151.3 0.07 9.6 9.0 1.03 0.34 -117.3 0.12 8.9 10.0 1.13 0.35 -82.7 0.21 8.4 frequency (ghz) figure 22. msg/mag and |s 21 | 2 vs. frequency at 3 v, 10 ma. msg/mag and s 21 (db) 020 51015 msg mag s 21 30 25 20 15 10 5 0 -5 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measur e- ments a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. ATF-35143 typical scattering parameters, v ds = 3 v, i ds = 10 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.50 0.99 -18.76 16.07 6.36 164.73 -32.77 0.023 76.79 0.65 -13.67 24.42 0.75 0.97 -29.12 15.97 6.29 155.93 -29.37 0.034 70.22 0.63 -19.08 22.70 1.00 0.95 -38.28 15.79 6.16 148.37 -27.13 0.044 64.53 0.62 -25.28 21.46 1.50 0.91 -55.52 15.34 5.85 133.87 -24.01 0.063 54.04 0.59 -37.48 19.68 1.75 0.88 -63.78 15.09 5.68 126.95 -22.97 0.071 49.13 0.57 -43.28 19.00 2.00 0.86 -71.79 14.82 5.51 120.22 -22.05 0.079 44.06 0.56 -49.01 18.43 2.50 0.81 -87.55 14.27 5.17 107.29 -20.82 0.091 34.85 0.52 -59.84 17.55 3.00 0.75 -103.15 13.71 4.85 95.00 -19.83 0.102 25.98 0.49 -69.88 16.77 4.00 0.66 -134.65 12.56 4.25 71.95 -18.71 0.116 9.56 0.42 -87.88 15.63 5.00 0.60 -165.16 11.45 3.74 50.50 -18.13 0.124 -5.10 0.35 -105.14 14.79 6.00 0.58 166.12 10.43 3.32 30.44 -17.79 0.129 -19.00 0.29 -122.61 14.11 7.00 0.56 137.25 9.44 2.97 10.91 -17.65 0.131 -32.32 0.23 -141.22 13.55 8.00 0.57 111.11 8.51 2.66 -7.80 -17.59 0.132 -43.61 0.18 -162.07 12.81 9.00 0.60 87.10 7.51 2.38 -26.05 -17.65 0.131 -55.14 0.13 172.01 10.75 10.00 0.64 66.58 6.64 2.15 -43.52 -17.65 0.131 -65.42 0.10 139.11 9.98 11.00 0.68 47.31 5.76 1.94 -61.59 -17.65 0.131 -76.27 0.11 93.44 9.32 12.00 0.71 28.18 4.81 1.74 -79.58 -17.72 0.130 -87.47 0.16 57.88 8.54 13.00 0.74 9.02 3.71 1.53 -96.96 -17.99 0.126 -98.60 0.23 35.32 7.59 14.00 0.77 -4.82 2.61 1.35 -112.95 -18.34 0.121 -107.41 0.29 13.11 6.76 15.00 0.82 -15.65 1.60 1.20 -128.77 -18.56 0.118 -116.63 0.35 -4.62 6.79 16.00 0.82 -28.00 0.51 1.06 -145.23 -18.71 0.116 -126.02 0.42 -19.61 5.79 17.00 0.84 -40.11 -0.55 0.94 -160.01 -18.71 0.116 -136.14 0.49 -29.62 5.54 18.00 0.86 -55.87 -1.68 0.82 -176.05 -19.25 0.109 -146.13 0.55 -41.92 5.05
11 ATF-35143 typical noise parameters v ds = 3 v, i ds = 15 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.11 0.86 3.5 0.17 21.2 0.9 0.15 0.81 12.1 0.16 19.9 1.0 0.16 0.80 14.3 0.16 19.6 1.5 0.21 0.73 25.1 0.15 18.2 1.8 0.24 0.69 31.6 0.14 17.6 2.0 0.26 0.66 35.9 0.20 17.2 2.5 0.31 0.60 47.2 0.17 16.3 3.0 0.37 0.55 59.4 0.15 15.6 4.0 0.47 0.46 86.0 0.11 14.2 5.0 0.58 0.40 115.4 0.07 12.9 6.0 0.68 0.36 146.8 0.05 11.8 7.0 0.79 0.33 179.8 0.05 10.8 8.0 0.89 0.32 -146.1 0.07 10.0 9.0 1.00 0.32 -111.5 0.13 9.3 10.0 1.10 0.33 -76.8 0.22 8.8 frequency (ghz) figure 23. msg/mag and |s 21 | 2 vs. frequency at 3 v, 15 ma. msg/mag and s 21 (db) 020 51015 msg mag s 21 30 25 20 15 10 5 0 -5 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measur e- ments a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. ATF-35143 typical scattering parameters, v ds = 3 v, i ds = 15 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.50 0.99 -19.76 17.20 7.24 164.03 -33.15 0.022 76.95 0.60 -14.39 25.17 0.75 0.96 -30.58 17.08 7.14 154.94 -29.90 0.032 69.88 0.58 -20.00 23.47 1.00 0.94 -40.14 16.86 6.97 147.12 -27.54 0.042 64.59 0.57 -26.48 22.20 1.50 0.90 -58.04 16.35 6.57 132.22 -24.58 0.059 54.00 0.54 -39.05 20.47 1.75 0.87 -66.61 16.06 6.35 125.16 -23.48 0.067 49.23 0.52 -45.00 19.78 2.00 0.84 -74.88 15.75 6.13 118.36 -22.62 0.074 44.39 0.50 -50.83 19.19 2.50 0.78 -91.02 15.13 5.71 105.32 -21.41 0.085 35.29 0.47 -61.71 18.27 3.00 0.73 -106.95 14.50 5.31 93.02 -20.45 0.102 27.00 0.44 -71.87 17.47 4.00 0.63 -138.86 13.24 4.59 70.17 -19.41 0.107 11.47 0.37 -89.81 16.32 5.00 0.58 -169.42 12.05 4.00 49.09 -18.79 0.115 -2.18 0.31 -107.23 15.42 6.00 0.56 162.05 10.97 3.53 29.39 -18.34 0.121 -15.36 0.24 -125.21 14.66 7.00 0.55 133.54 9.93 3.14 10.23 -18.06 0.125 -27.97 0.19 -145.42 14.00 8.00 0.56 107.88 8.96 2.81 -8.11 -17.92 0.127 -38.89 0.14 -168.81 12.23 9.00 0.60 84.56 7.95 2.50 -26.04 -17.86 0.128 -50.41 0.11 158.79 10.87 10.00 0.64 64.57 7.06 2.26 -43.28 -17.72 0.130 -60.57 0.09 118.59 10.16 11.00 0.68 45.84 6.16 2.03 -61.06 -17.59 0.132 -71.45 0.12 75.36 9.55 12.00 0.71 27.11 5.19 1.82 -78.75 -17.59 0.132 -83.32 0.18 46.94 8.80 13.00 0.74 8.18 4.09 1.60 -95.88 -17.79 0.129 -94.36 0.25 27.91 7.86 14.00 0.77 -5.58 2.98 1.41 -111.57 -18.06 0.125 -103.78 0.31 7.94 7.09 15.00 0.82 -16.18 1.96 1.25 -127.09 -18.27 0.122 -113.43 0.37 -8.87 7.04 16.00 0.82 -28.41 0.88 1.11 -143.31 -18.42 0.120 -123.35 0.44 -23.42 6.09 17.00 0.85 -40.49 -0.15 0.98 -157.87 -18.49 0.119 -134.06 0.50 -32.96 5.87 18.00 0.86 -56.20 -1.25 0.87 -173.65 -18.86 0.114 -144.46 0.56 -44.64 5.41
12 ATF-35143 typical noise parameters v ds = 3 v, i ds = 30 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.11 0.87 3.5 0.18 21.6 0.9 0.16 0.81 12.5 0.17 20.5 1.0 0.17 0.79 14.7 0.17 20.2 1.5 0.23 0.72 25.9 0.16 18.9 1.8 0.27 0.68 32.6 0.15 18.3 2.0 0.28 0.65 37.1 0.15 17.9 2.5 0.35 0.59 49.3 0.14 17.0 3.0 0.41 0.53 62.5 0.12 16.3 4.0 0.53 0.43 91.6 0.09 14.9 5.0 0.66 0.37 123.4 0.07 13.6 6.0 0.79 0.33 157.1 0.05 12.4 7.0 0.91 0.31 -168.3 0.06 11.4 8.0 1.04 0.31 -133.7 0.10 10.6 9.0 1.17 0.33 -100.0 0.17 9.9 10.0 1.29 0.38 -68.1 0.28 9.3 frequency (ghz) figure 24. msg/mag and |s 21 | 2 vs. frequency at 3 v, 30 ma. msg/mag and s 21 (db) 020 51015 msg mag s 21 30 25 20 15 10 5 0 -5 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measur e- ments a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. ATF-35143 typical scattering parameters, v ds = 3 v, i ds = 30 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.50 0.99 -21.01 18.45 8.36 163.08 -33.98 0.020 76.89 0.53 -15.23 26.21 0.75 0.96 -32.39 18.29 8.21 153.62 -30.46 0.030 69.94 0.51 -21.01 24.36 1.00 0.93 -42.42 18.03 7.97 145.49 -28.40 0.038 64.80 0.50 -27.72 23.22 1.50 0.88 -61.18 17.42 7.43 130.11 -25.35 0.054 54.32 0.47 -40.61 21.39 1.75 0.85 -70.01 17.09 7.15 122.91 -24.44 0.060 49.77 0.45 -46.56 20.72 2.00 0.82 -78.57 16.74 6.87 116.00 -23.61 0.066 45.15 0.43 -52.43 20.17 2.50 0.76 -95.09 16.03 6.33 102.87 -22.38 0.076 36.87 0.40 -63.37 19.21 3.00 0.70 -111.30 15.32 5.83 90.60 -21.41 0.085 29.08 0.37 -73.44 18.36 4.00 0.61 -143.48 13.93 4.97 68.04 -20.26 0.097 14.96 0.31 -91.21 17.10 5.00 0.56 -174.00 12.65 4.29 47.37 -19.58 0.105 2.38 0.25 -108.94 16.11 6.00 0.54 157.98 11.50 3.76 28.09 -19.02 0.112 -10.00 0.19 -128.04 15.26 7.00 0.54 130.06 10.42 3.32 9.32 -18.64 0.117 -22.21 0.14 -151.53 13.78 8.00 0.55 105.20 9.42 2.96 -8.66 -18.34 0.121 -32.79 0.11 179.40 12.10 9.00 0.59 82.53 8.39 2.63 -26.26 -18.06 0.125 -44.11 0.09 138.30 11.00 10.00 0.63 63.18 7.49 2.37 -43.25 -17.79 0.129 -54.57 0.09 95.15 10.36 11.00 0.67 44.96 6.56 2.13 -60.82 -17.52 0.133 -66.16 0.14 62.17 9.76 12.00 0.71 26.64 5.58 1.90 -78.23 -17.46 0.134 -78.18 0.20 39.86 9.05 13.00 0.74 7.94 4.46 1.67 -95.07 -17.65 0.131 -89.74 0.27 23.41 8.14 14.00 0.77 -5.53 3.36 1.47 -110.42 -17.86 0.128 -99.72 0.34 5.08 7.40 15.00 0.82 -16.02 2.33 1.31 -125.79 -17.99 0.126 -109.60 0.39 -11.42 7.41 16.00 0.82 -28.09 1.25 1.16 -141.72 -18.06 0.125 -120.39 0.46 -25.74 6.44 17.00 0.85 -40.02 0.23 1.03 -156.00 -18.06 0.125 -131.03 0.51 -35.29 6.19 18.00 0.87 -55.63 -0.85 0.91 -171.48 -18.49 0.119 -141.69 0.57 -46.81 5.71
13 ATF-35143 typical noise parameters v ds = 4 v, i ds = 30 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.10 0.90 3.5 0.22 20.7 0.9 0.14 0.85 12.5 0.21 19.7 1.0 0.16 0.83 14.7 0.20 19.5 1.5 0.21 0.77 25.9 0.18 18.4 1.8 0.25 0.73 32.6 0.17 17.8 2.0 0.28 0.70 37.1 0.17 17.5 2.5 0.33 0.64 49.1 0.15 16.7 3.0 0.38 0.58 62.0 0.14 16.0 4.0 0.49 0.48 90.3 0.10 14.7 5.0 0.62 0.40 121.2 0.07 13.5 6.0 0.74 0.35 154.0 0.05 12.5 7.0 0.87 0.32 -172.2 0.06 11.5 8.0 0.99 0.31 -138.0 0.09 10.7 9.0 1.11 0.34 -104.2 0.15 10.0 10.0 1.24 0.39 -71.6 0.26 9.5 frequency (ghz) figure 25. msg/mag and |s 21 | 2 vs. frequency at 4 v, 30 ma. msg/mag and s 21 (db) 020 51015 msg mag s 21 30 25 20 15 10 5 0 -5 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measur e- ments a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. ATF-35143 typical scattering parameters, v ds = 4 v, i ds = 30 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.50 0.99 -21.11 18.54 8.45 163.20 -33.98 0.020 77.63 0.56 -14.66 26.26 0.75 0.96 -32.57 18.38 8.30 153.72 -30.75 0.029 70.15 0.54 -20.35 24.55 1.00 0.94 -42.70 18.13 8.07 145.56 -28.64 0.037 64.68 0.53 -26.91 23.38 1.50 0.88 -61.55 17.53 7.53 130.19 -25.68 0.052 53.94 0.50 -39.45 21.61 1.75 0.85 -70.46 17.20 7.24 123.00 -24.58 0.059 49.29 0.48 -45.29 20.90 2.00 0.82 -79.07 16.84 6.95 116.04 -23.88 0.064 44.64 0.46 -50.94 20.36 2.50 0.76 -95.78 16.14 6.41 102.91 -22.62 0.074 36.30 0.43 -61.54 19.38 3.00 0.71 -112.14 15.43 5.91 90.63 -21.72 0.082 28.32 0.40 -71.17 18.58 4.00 0.62 -144.46 14.04 5.03 68.03 -20.72 0.092 13.98 0.34 -87.95 17.38 5.00 0.57 -174.93 12.76 4.34 47.35 -20.00 0.100 1.12 0.28 -104.23 16.38 6.00 0.55 157.13 11.61 3.81 28.07 -19.49 0.106 -11.07 0.22 -120.69 15.55 7.00 0.55 129.56 10.54 3.37 9.35 -19.25 0.109 -23.07 0.17 -139.29 14.19 8.00 0.57 104.96 9.55 3.00 -8.62 -18.94 0.113 -33.33 0.13 -160.54 12.47 9.00 0.60 82.47 8.53 2.67 -26.19 -18.79 0.115 -44.34 0.09 169.67 11.33 10.00 0.64 63.23 7.64 2.41 -43.13 -18.49 0.119 -54.44 0.07 128.74 10.70 11.00 0.68 45.01 6.74 2.17 -60.63 -18.27 0.122 -65.68 0.09 78.47 10.10 12.00 0.72 26.69 5.79 1.95 -78.09 -18.13 0.124 -77.35 0.15 47.96 9.40 13.00 0.74 8.00 4.71 1.72 -95.00 -18.27 0.122 -88.59 0.22 28.53 8.47 14.00 0.77 -5.46 3.64 1.52 -110.50 -18.42 0.120 -98.13 0.28 8.38 7.69 15.00 0.82 -16.18 2.65 1.36 -126.04 -18.49 0.119 -108.03 0.34 -8.46 7.76 16.00 0.82 -28.39 1.62 1.21 -142.14 -18.49 0.119 -118.41 0.40 -22.93 6.75 17.00 0.85 -40.51 0.64 1.08 -156.61 -18.49 0.119 -129.54 0.46 -32.29 6.53 18.00 0.86 -56.36 -0.44 0.95 -172.55 -18.86 0.114 -140.19 0.52 -43.97 6.00
14 ATF-35143 typical noise parameters v ds = 4 v, i ds = 60 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.22 0.84 4.4 0.29 22.5 0.9 0.30 0.78 15.6 0.29 21.3 1.0 0.32 0.77 18.4 0.28 21.0 1.5 0.42 0.70 32.4 0.26 19.8 1.8 0.48 0.65 40.8 0.25 19.2 2.0 0.52 0.63 46.4 0.24 18.8 2.5 0.63 0.56 61.0 0.21 17.8 3.0 0.73 0.51 76.6 0.19 17.0 4.0 0.94 0.44 109.9 0.13 15.5 5.0 1.15 0.40 144.8 0.09 14.1 6.0 1.35 0.39 -179.8 0.08 12.9 7.0 1.56 0.40 -145.5 0.13 11.9 8.0 1.77 0.43 -113.7 0.26 11.0 9.0 1.98 0.47 -85.6 0.48 10.3 10.0 2.18 0.53 -62.6 0.79 9.8 frequency (ghz) figure 26. msg/mag and |s 21 | 2 vs. frequency at 4 v, 60 ma. msg/mag and s 21 (db) 020 51015 msg mag s 21 30 25 20 15 10 5 0 -5 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measur e- ments a true f min is calculated. refer to the noise parameter application section for more information. 3. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. ATF-35143 typical scattering parameters, v ds = 4 v, i ds = 60 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.50 0.99 -21.27 18.15 8.09 163.09 -34.89 0.018 77.28 0.54 -13.50 26.52 0.75 0.96 -32.77 17.99 7.94 153.59 -31.70 0.026 70.40 0.53 -18.54 24.83 1.00 0.94 -42.95 17.74 7.71 145.40 -29.37 0.034 65.05 0.51 -24.50 23.55 1.50 0.88 -61.92 17.13 7.19 129.98 -26.56 0.047 55.14 0.48 -35.90 21.84 1.75 0.85 -70.88 16.79 6.91 122.76 -25.51 0.053 50.40 0.47 -41.17 21.15 2.00 0.82 -79.55 16.45 6.64 115.80 -24.73 0.058 46.34 0.45 -46.33 20.59 2.50 0.76 -96.36 15.74 6.12 102.60 -23.48 0.067 38.10 0.42 -55.86 19.61 3.00 0.70 -112.86 15.03 5.64 90.26 -22.62 0.074 30.61 0.39 -64.53 18.82 4.00 0.61 -145.47 13.64 4.81 67.52 -21.51 0.084 17.18 0.34 -79.32 17.58 5.00 0.57 -176.15 12.35 4.15 46.76 -20.82 0.091 5.47 0.29 -93.48 16.59 6.00 0.55 155.85 11.21 3.64 27.45 -20.26 0.097 -5.83 0.24 -107.07 15.74 7.00 0.55 128.25 10.14 3.21 8.68 -19.83 0.102 -17.10 0.19 -121.43 13.17 8.00 0.57 103.61 9.16 2.87 -9.34 -19.41 0.107 -26.34 0.15 -137.04 11.94 9.00 0.60 81.11 8.14 2.55 -27.02 -19.09 0.111 -36.93 0.11 -156.16 10.99 10.00 0.64 62.01 7.25 2.30 -44.01 -18.71 0.116 -46.43 0.07 178.65 10.38 11.00 0.69 43.90 6.37 2.08 -61.57 -18.27 0.122 -57.09 0.06 113.63 9.88 12.00 0.72 25.78 5.43 1.87 -79.17 -17.92 0.127 -68.92 0.10 60.75 9.26 13.00 0.75 7.31 4.37 1.65 -96.36 -17.92 0.127 -80.43 0.18 35.69 8.35 14.00 0.78 -6.12 3.30 1.46 -112.19 -17.92 0.127 -90.26 0.25 13.24 7.57 15.00 0.83 -16.62 2.29 1.30 -127.94 -17.86 0.128 -100.79 0.31 -4.12 7.78 16.00 0.84 -28.78 1.25 1.16 -144.27 -17.79 0.129 -112.14 0.39 -19.12 6.73 17.00 0.87 -40.91 0.21 1.03 -159.19 -17.79 0.129 -123.71 0.46 -28.89 6.65 18.00 0.88 -56.66 -0.92 0.90 -175.28 -17.99 0.126 -134.88 0.52 -40.92 6.06
15 noise parameter applications information f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements, a true f min is calculated. f min represents the true minimum noise figure of the device when the device is pre- sented with an impedance matching network that trans- forms the source impedance, typically 50 ? , to an impedance represented by the reflection coefficient o . the designer must design a matching network that will present o to the device with minimal associated circuit losses. the noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. the noise figure of the device is equal to f min only when the device is presented with o . if the reflec- tion coefficient of the matching network is other than o , then the noise figure of the device will be greater than f min based on the following equation. nf = f min + 4 r n | s C o | 2 zo (|1 + o | 2 )(1 C s | 2 ) where r n /z o is the normalized noise resistance, o is the opti- mum reflection coefficient required to produce f min and s is the reflection coefficient of the source impedance actually presented to the device. the losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. the losses of the matching networks are related to the q of the components and associated printed circuit board loss. o is typically fairly low at higher frequencies and increases as frequency is lowered. larger gate width devices will typically have a lower o as compared to narrower gate width devices. typically for fets, the higher o usually infers that an impedance much higher than 50 ? is required for the device to produce f min . at vhf frequencies and even lower l band frequencies, the required impedance can be in the vicinity of several thousand ohms. matching to such a high imped- ance requires very hi-q compo- nents in order to minimize circuit losses. as an example at 900 mhz, when airwwound coils (q > 100) are used for matching networks, the loss can still be up to 0.25 db which will add directly to the noise figure of the device. using muiltilayer molded inductors with qs in the 30 to 50 range results in additional loss over the airwound coil. losses as high as 0.5 db or greater add to the typical 0.15 db f min of the device creating an amplifier noise figure of nearly 0.65 db. a discussion concerning calculated and measured circuit losses and their effect on ampli- fier noise figure is covered in agilent application 1085.
16 l=lc l=lb r=rb l=lb r=rb l c c=ca c c=cb lossyl l=lb r=rb l=la * .5 l=ld l l lossyl gate_in source drain_out r equation la=0.1 nh equation lb=0.1 nh equation lc=0.8 nh equation ld=0.6 nh equation rb=0.1 oh equation ca=0.15 pf equation cb=0.15 pf r=0.1 oh lossyl l=la l=lb r=rb l lossyl l=lb r=rb lossyl g s d source ATF-35143 sc-70 4 lead, high frequency model optimized for 0.1 C 6.0 ghz this model can be used as a design tool. it has been tested on mds for various specifications. however, for more precise and accurate design, please refer to the measured data in this data sheet. for future improvements agilent reserves the right to change these models without prior notice. nfetmesfet g model=fet w=400 m xx d xx s s xx nfet=yes pfet= idsmod=3 vto=?.95 beta= beta lambda=0.09 alpha=4.0 b=0.8 tnom=27 idstc= vbi=.7 ids model delta=.2 gscap=3 cgs=cgs pf gdcap=3 gcd=cgd pf gate model rg=1 rd=rd rs=rs lg=lg nh ld=ld nh ls=ls nh cds=cds pf crf=.1 rc=rc parasitics gsfwd=1 gsrev=0 gdfwd=1 gdrev=0 vjr=1 is=1 na ir=1 na imax=.1 xti= n= eg= breakdown fnc=01e+6 r=.17 p=.65 c=.2 noise model scal factors (w=fet width in microns) equation cds=0.01 * w/200 equation beta=0.06 * w/200 equation rd=200/w equation rs=.5 * 200/w equation cgs=0.2 * w/200 equation cgd=0.04 * w/200 equation lg=0.03 * 200/w equation ld=0.03 * 200/w equation ls=0.01 * 200/w equation rc=500 * 200/w * statz mesfet model * model = fet ATF-35143 die model
17 package dimensions sc-70 4l/sot-343 he d a2 a1 b b1 e 1.30 (.051) bsc 1.15 (.045) bsc c l a dimensions (mm) min. 1.15 1.85 1.80 0.80 0.80 0.00 0.25 0.55 0.10 0.10 max. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.70 0.20 0.46 symbol e d he a a2 a1 b b1 c l notes: 1. all dimensions are in mm. 2. dimensions are inclusive of plating. 3. dimensions are exclusive of mold flash & metal burr. 4. all specifications comply to eiaj sc70. 5. die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. package surface to be mirror finish. part number ordering information no. of part number devices container ATF-35143-tr1 3000 7" reel ATF-35143-tr2 10000 13" reel ATF-35143-blk 100 antistatic bag ATF-35143-tr1g 3000 7" reel ATF-35143-tr2g 10000 13" reel ATF-35143-blkg 100 antistatic bag note: for lead-free option, the part number will have the character g at the end.
18 device orientation user feed direction cover tape carrier tape reel recommended pcb pad layout for agilent's sc70 4l/sot-343 products 1.30 0.051 0.60 0.024 .090 0.035 dimensions in inches mm 1.15 0.045 2.00 0.079 1.00 0.039 end view 8 mm 4 mm top view 5px 5px 5px 5px
www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (65) 6756 2394 india, australia, new zealand: (65) 6755 1939 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (65) 6755 2044 taiwan: (65) 6755 1843 data subject to change. copyright ? 2004 agilent technologies, inc. obsoletes 5988-7943en november 22, 2004 5989-1918en tape dimensions and product orientation for outline 4t p p 0 p 2 f w c d 1 d e a 0 10 max. t 1 (carrier tape thickness) t t (cover tape thickness) 10 max. b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.40 0.10 2.40 0.10 1.20 0.10 4.00 0.10 1.00 + 0.25 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 cavity diameter pitch position d p 0 e 1.55 0.10 4.00 0.10 1.75 0.10 0.061 + 0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 + 0.30 - 0.10 0.254 0.02 0.315 + 0.012 0.0100 0.0008 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance width tape thickness c t t 5.40 0.10 0.062 0.001 0.205 + 0.004 0.0025 0.0004 cover tape

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