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| semitrans ? 2 trench igbt modules skm 100gb176d features ! " # $ % typical applications & ' ( ) ( * ) ( + & , ! $ - gb absolute maximum ratings . ( / " ' symbol conditions values units igbt 0 . ( / 2 ) + + % 0 2 ( + / . ( / 2 . ( & 3 + / 4 + & % 5 6 % 5 6 . $ % 2 ( + & 7 8 . + 2 . + + 9 7 : . + 9 ; 2 ) + + 0 2 . ( / 2 + < inverse diode % = 0 2 ( + / . ( / 2 + + & 3 + / ) + & % = 5 6 % = 5 6 . $ % = 2 ( + & % = 6 2 + 9 - 0 2 ( + / ) . + & module % 5 6 . + + & 0 * > + - - - ? 2 ( + / * > + - - - ? 2 . ( / & " 2 - > + + + characteristics . ( / " ' symbol conditions min. typ. max. units igbt 7 7 " % @ & ( " . ( " 3 # " > % 7 + " 0 . ( / + " 2 + " @ & + 0 . ( / 2 2 " . 0 2 . ( / + " 4 2 " 2 7 2 ( 0 . ( / 2 @ 2 # " ) a 0 2 . ( / . + . > a % ) ( & " 7 2 ( 0 . ( / - . . " > ( 0 2 . ( / - . " > . " 4 ( " ) = . ( " 7 + 2 6 b + " . 3 = + " . . = c 7 7 * 3 d ? 2 ( # . + 5 7 0 . ( / 3 " ( e ' . 3 + 5 7 > " . a 2 . + + > + ' d ' 2 # 3 + & d < % ) ( & > > f ' 5 7 > " . a 0 2 . ( / # 3 + ' d ' > 4 + & d < 7 * 2 ( 2 > + g . + . 3 " ( f 5 0 * % 7 h + " . > i d j skm 100gb176d 1 06-10-2009 nos ? by semikron semitrans ? 2 trench igbt modules skm 100gb176d features ! " # $ % typical applications & ' ( ) ( * ) ( + & , ! $ - gb characteristics symbol conditions min. typ. max. units inverse diode = % = ) ( & 9 7 + 0 . ( / - 2 " # 2 " 4 0 2 . ( / - 2 " # 2 " 4 = + 0 . ( / 2 " 2 2 " @ 0 2 . ( / + " 4 2 " 2 = 0 . ( / # " ) 3 a 0 2 . ( / 4 " @ 2 2 a % 5 5 6 % = ) ( & 0 2 . ( / ) 3 " ( & c ' d ' 2 # ( + & d < g . + . 4 " # < 7 * 2 ( 9 2 . + + . 2 " > f 5 0 * k ' ' + " > ( i d j module g @ + 5 l ? l - " * . ( / + " ) ( a 2 . ( / 2 a 5 * ' + " + ( i d j 6 m 6 # @ ( n 6 6 ( . " ( ( n 2 # + this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. skm 100gb176d 2 06-10-2009 nos ? by semikron semitrans ? 2 trench igbt modules skm 100gb176d features ! " # $ % typical applications & ' ( ) ( * ) ( + & , ! $ - gb z th symbol conditions values units z th(j-c)l 5 2 2 # + m d j 5 . # + m d j 5 @ 2 # " ( m d j 5 > @ " ( m d j 2 + " 2 + ( # . + " + + 4 @ + " + + 2 2 > + " + + + ( z th(j-c)d 5 2 . ) + m d j 5 . 2 @ 4 m d j 5 @ @ ) m d j 5 > > m d j 2 + " + > ) ( . + " + 2 + > @ + " + + 2 2 > + " + + + @ skm 100gb176d 3 06-10-2009 nos ? by semikron fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic skm 100gb176d 4 06-10-2009 nos ? by semikron fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 transient thermal impedance fig. 10 cal diode forward characteristic fig. 11 typ. cal diode peak reverse recovery current fig. 12 typ. cal diode recovered charge skm 100gb176d 5 06-10-2009 nos ? by semikron ul recognized file no. e 63 532 k # 2 7 h k # 2 skm 100gb176d 6 06-10-2009 nos ? by semikron |
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