regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
mar. 2002 outline drawing dimensions in mm to-220f type name voltage class 3.2 0.2 1.3 max 0.8 2.54 13.5 min 3.6 5.0 1.2 8.5 10.5 max 5.2 4.5 23 1 2 1 3 1 2 3 t 1 terminal t 2 terminal gate terminal 17 2.54 2.8 0.5 2.6 ? measurement point of case temperature mitsubishi semiconductor ? triac ? BCR5PM-14 medium power use insulated type, planar passivation type application switching mode power supply, washing machine, small motor control, copying machine, other general purpose control applications BCR5PM-14 ? t (rms) ........................................................................ 5a ? drm ....................................................................... 700v ? fgt ! , i rgt ! , i rgt # ............................................ 30ma ? iso ........................................................................ 2000v u l recognized: yellow card no.e80276(n) file no. e80271 ? 1. gate open. symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage conditions commercial frequency, sine full wave 360 conduction, t c =95 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value t a =25 c, ac 1 minute, t 1 ?t 2 ?g terminal to case unit a a a 2 s w w v a c c g v ratings 5 50 10.4 3 0.3 10 2 ?0 ~ +125 ?0 ~ +125 2.0 2000 symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v maximum ratings 14 700 840
mar. 2002 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c mitsubishi semiconductor ? triac ? BCR5PM-14 medium power use insulated type, planar passivation type ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. the contact thermal resistance r th (c-f) in case of greasing is 0.5 c/w. ? 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c = 2.5a/ms 3. peak off-state voltage v d =400v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c, v drm applied t c =25 c, i tm =7a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c, v d =1/2v drm junction to case ? 3 t j =125 c unit ma v v v v ma ma ma v c/w v/ s typ. ! @ # ! @ # electrical characteristics limits min. 0.2 5 max. 2.0 1.8 1.5 1.5 1.5 30 30 30 4.0 performance curves 10 0 23 5710 1 40 20 23 5710 2 44 60 80 100 30 10 50 70 90 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 1 t j = 125 c t j = 25 c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 4
mar. 2002 mitsubishi semiconductor ? triac ? BCR5PM-14 medium power use insulated type, planar passivation type 23 10 1 5710 0 23 5710 1 23 5710 2 3.5 3.0 2.5 2.0 1.5 1.0 0.5 4.0 0 23 10 2 5710 3 23 5 10 3 10 1 10 3 10 4 10 2 7 5 3 2 10 0 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 23 57 23 57 10 2 10 5 23 57 23 57 10 8 6 4 2 9 7 5 3 1 0 100 123 5 4 6789 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 v gd = 0.2v p gm = 3w v gm = 10v v gt = 1.5v i gm = 2a p g(av) = 0.3w 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 40 0 4 0 8 0 120 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 40 0 4 0 8 0 120 i fgt i i fgt i i rgt i i rgt iii i rgt i, i rgt iii typical example gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) gate characteristics ( , ? and ?? ) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) typical example maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/w) conduction time (cycles at 60hz) gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance ( c/w) conduction time (cycles at 60hz) no fins 360 conduction resistive, inductive loads
mar. 2002 mitsubishi semiconductor ? triac ? BCR5PM-14 medium power use insulated type, planar passivation type 14040 40 60 20 0 20 6 0 8 0 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 160 120 100 60 20 0 3.20 0.4 1.2 2.0 2.8 40 80 140 0.8 1.6 2.4 160 120 100 60 20 0 80 1357 40 80 140 246 60 60 t2.3 120 120 t2.3 100 100 t2.3 160 120 100 60 20 0 80 1357 40 80 140 246 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 4 0 8 0 120 10 1 140 60 20 20 60 100 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 40 0 4 0 8 0 120 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c ) t 2 + , g typical example t 2 , g typical example t 2 + , g + typical example distribution resistive, inductive loads all fins are black painted aluminum and greased case temperature ( c) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) curves apply regardless of conduction angle resistive, inductive loads natural convection all fins are black painted aluminum and greased curves apply regardless of conduction angle 360 conduction resistive, inductive loads allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature ( c) typical example natural convection no fins curves apply regardless of conduction angle resistive inductive loads 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) laching current vs. junction temperature laching current (ma) junction temperature ( c) holding current vs. junction temperature junction temperature ( c) typical example
mar. 2002 mitsubishi semiconductor ? triac ? BCR5PM-14 medium power use insulated type, planar passivation type 160 100 80 40 20 0 14040 40 60 20 0 2 0 6 0 80 140 100120 60 120 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 i rgt iii i rgt i i fgt i 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 10 0 23 5710 1 10 1 7 5 3 2 23 5710 2 10 2 7 5 3 2 10 0 breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 125 c i quadrant iii quadrant breakover voltage vs. junction temperature junction temperature ( c) typical example 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c ) commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
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