mar.2002 BCR3KM-14 outline drawing dimensions in mm to-220fn mitsubishi semiconductor ? triac ? BCR3KM-14 low power use insulated type, planar passivation type application contactless ac switches, light dimmer, electric blankets, control of household equipment such as electric fan, solenoid drivers, small motor control, other general purpose control applications i t (rms) .................................................................. 3a v drm ................................................................. 700v i fgt ! , i rgt ! , i rgt # ..................................... 30ma v iso .................................................................. 2000v ? 1. gate open. i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso symbol a a a 2 s w w v a c c g v 3 30 3.7 3 0.3 6 0.5 ?0 ~ +125 ?0 ~ +125 2.0 2000 symbol 14 700 840 v v maximum ratings value corresponding to 1 cycle of half wave 60hz, surge on-state current v drm v dsm rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage parameter parameter voltage class unit ratings unit conditions commercial frequency, sine full wave 360 conduction, tc=108 c 60hz sinewave 1 full cycle, peak value, non-repetitive typical value t a =25 c, ac 1 minute, t 1 ?t 2 ?g terminal to case repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 ? ? ? measurement point of case temperature ? ? ? ? ? t 1 terminal t 2 terminal gate terminal 15 0.3 14 0.5 10 0.3 2.8 0.2 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 ??? e
mar.2002 ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. the contact thermal resistance r th (c-f) in case of greasing is 0.5 c/w. ? 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c t j =125 c, v drm applied t c =25 c, i tm =4.5a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c, v d =1/2v drm junction to case ? 3 t j =125 c unit repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state ? 4 commutating voltage limits max. 2.0 1.6 1.5 1.5 1.5 30 30 30 4.0 ! @ # ! @ # typ. min. 0.2 5 ma v v v v ma ma ma v c/w v/ s symbol parameter test conditions electrical characteristics mitsubishi semiconductor ? triac ? BCR3KM-14 low power use insulated type, planar passivation type test conditions commutating voltage and current waveforms (inductive load) supply voltage time time time main current main voltage (di/dt) c v d (dv/dt) c 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c = 1.5a/ms 3. peak off-state voltage v d =400v performance curves maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) 3.8 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 1 t c = 25 c 10 0 23 5710 1 23 5710 2 44 30 35 20 25 10 15 5 40 0
mar.2002 mitsubishi semiconductor ? triac ? BCR3KM-14 low power use insulated type, planar passivation type 10 2 5710 1 23 5710 2 23 5710 3 23 10 ? 7 10 ? 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 3 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 2 10 1 7 5 4 3 2 10 1 7 5 4 3 2 i gm = 0.5a p gm = 3w v gd = 0.2v v gt p g(av) = 0.3w 23 10 2 5710 3 23 57 23 10 ? 5710 0 23 5710 1 23 5710 2 0 5.0 4.5 3.0 4.0 3.5 0.5 1.0 2.0 1.5 140 120 60 ?0 ?0 ?0 0 20 40 80 100 10 2 7 5 3 3 2 10 3 7 5 3 3 2 10 1 ?0 ?0 ?0 20 80 060 40 140 120 100 3.0 2.0 1.0 5.0 4.0 0 0 1.0 4.0 2.0 3.0 0.5 3.5 1.5 2.5 i fgt , i rgt i rgt i fgt , i rgt i rgt 23 10 2 5710 3 23 5710 4 23 5710 5 2.5 typical example gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) gate characteristics (i, ii and iii) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) typical example maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c /w) conduction time (cycles at 60hz) gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance ( c/ w) conduction time (cycles at 60hz) 360 conduction resistive, inductive loads
mar.2002 mitsubishi semiconductor ? triac ? BCR3KM-14 low power use insulated type, planar passivation type 40 160 120 100 60 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 80 140 160 120 100 60 20 0 4.0 0 0.5 1.5 2.5 3.5 40 80 140 1.0 2.0 3.0 160 120 100 60 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 40 80 140 140 40 40 60 20 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 10 1 10 3 7 5 3 2 10 2 7 5 3 2 4 4 140 40 40 60 20 0 20 60 80 100 120 60 60 t 2.3 120 120 t 2.3 100 100 t 2.3 60 20 40 0 20 40 60 80 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t 2 + , g typical example distribution t 2 + , g + t 2 , g ? ? ? typical example all fins are black painted aluminum and greased case temperature ( c) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) curves apply regardless of conduction angle natural convection resistive,inductive loads all fins are black painted aluminum and greased curves apply regardless of conduction angle 360 conduction resistive, inductive loads allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature ( c) typical example natural convection no fins curves apply regardless of conduction angle resistive inductive loads 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) laching current vs. junction temperature laching current (ma) junction temperature ( c) holding current vs. junction temperature junction temperature ( c) typical example 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c )
mar.2002 mitsubishi semiconductor ? triac ? BCR3KM-14 low power use insulated type, planar passivation type 10 1 23 4 4 10 0 5710 1 23 5710 2 10 2 7 5 4 3 2 7 5 4 3 2 10 0 160 100 80 40 20 0 140 40 40 60 20 0 20 60 80 140 100120 60 120 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i iii quadrant main voltage main current i t (di/dt) c v d time time (dv/dt) c breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 125 c i quadrant iii quadrant breakover voltage vs. junction temperature junction temperature ( c) typical example 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c ) commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant minimum charac- teristics value 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
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