complementary silicon power transistor . . . for general purpose driver or medium power output stages in cw or switching applications. ? low collectoremitter saturation voltage e 0.5 v (max) ? high f t for good frequency response ? low leakage current ??????????????????????? ??????????????????????? maximum ratings ??????????????? ??????????????? rating ???? ???? symbol ??? ??? value ???? ???? unit ??????????????? ??????????????? collectoremitter voltage ???? ???? v ceo ??? ??? 80 ???? ???? vdc ??????????????? ??????????????? collectoremitter voltage ???? ???? vces ??? ??? 90 ???? ???? vdc ??????????????? ??????????????? emitter base voltage ???? ???? v eb ??? ??? 5.0 ???? ???? vdc ??????????????? ? ????????????? ? ??????????????? collector current e continuous peak (1) ???? ? ?? ? ???? i c ??? ? ? ? ??? 4.0 6.0 ???? ? ?? ? ???? adc ??????????????? ? ????????????? ? ??????????????? total power dissipation @ t c = 25 c total power dissipation @ t a = 25 c ???? ? ?? ? ???? p d ??? ? ? ? ??? 30 1.67 ???? ? ?? ? ???? watts w/ c ??????????????? ??????????????? operating and storage junction temperature range ???? ???? t j , t stg ??? ??? 55 to 150 ???? ???? c ??????????????????????? ??????????????????????? thermal characteristics ??????????????? ??????????????? characteristic ???? ???? symbol ??? ??? max ???? ???? unit ??????????????? ??????????????? thermal resistance, junction to case ???? ???? r q jc ??? ??? 4.2 ???? ???? c/w ??????????????? ??????????????? thermal resistance, junction to ambient ???? ???? r q ja ??? ??? 75 ???? ???? c/w ??????????????? ? ????????????? ? ??????????????? maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds ???? ? ?? ? ???? t l ??? ? ? ? ??? 275 ???? ? ?? ? ???? c (1) pulse width 6.0 ms, duty cycle 50%. ??????????????????????? ? ????????????????????? ? ??????????????????????? electrical characteristics (t j = 25 c unless otherwise noted) ??????????? ??????????? characteristic ????? ????? symbol ???? ???? min ???? ???? max ??? ??? unit ??????????? ? ????????? ? ? ????????? ? ??????????? dc current gain (v ce = 1.0 vdc, i c = 0.2 adc) (v ce = 1.0 vdc, i c = 1.0 adc) (v ce = 1.0 vdc, i c = 2.0 adc) ????? ? ??? ? ? ??? ? ????? h fe ???? ? ?? ? ? ?? ? ???? 40 20 20 ???? ? ?? ? ? ?? ? ???? 120 e e ??? ? ? ? ? ? ? ??? e on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 4 1 publication order number: d45c/d d45c d44c 4.0 ampere complementary silicon power transistors 80 volts pnp case 221a09 to220ab npn style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4
npn http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v ce = rated v ces , v be = 0) ????? ? ??? ? ????? i ces ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 0.1 ??? ? ? ? ??? m a ??????????????????? ? ????????????????? ? ??????????????????? emitter cutoff current (v eb = 5.0 vdc) ????? ? ??? ? ????? i ebo ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 10 ??? ? ? ? ??? m a ????????????????????????????????? ????????????????????????????????? on characteristics ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 1.0 adc, i b = 50 madc) ????? ? ??? ? ????? v ce(sat) ???? ? ?? ? ???? e ??? ? ? ? ??? 0.135 ???? ? ?? ? ???? 0.5 ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 1.0 adc, i b = 100 madc) ????? ? ??? ? ????? v be(sat) ???? ? ?? ? ???? e ??? ? ? ? ??? 0.85 ???? ? ?? ? ???? 1.3 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????? ??????????????????? collector capacitance (v cb = 10 vdc, f = 1.0 mhz) ????? ????? c cb ???? ???? e ??? ??? 125 ???? ???? e ??? ??? pf ??????????????????? ? ????????????????? ? ??????????????????? gain bandwidth product (i c = 20 ma, v ce = 4.0 vdc, f = 20 mhz) ????? ? ??? ? ????? f t ???? ? ?? ? ???? e ??? ? ? ? ??? 40 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz ????????????????????????????????? ????????????????????????????????? switching times ??????????????????? ? ????????????????? ? ??????????????????? delay and rise times (i c = 1.0 adc, i b1 = 0.1 adc) ????? ? ??? ? ????? t d + t r ???? ? ?? ? ???? e ??? ? ? ? ??? 50 ???? ? ?? ? ???? 75 ??? ? ? ? ??? ns ??????????????????? ? ????????????????? ? ??????????????????? storage time (i c = 1.0 adc, i b1 = i b2 = 0.1 adc) ????? ? ??? ? ????? t s ???? ? ?? ? ???? e ??? ? ? ? ??? 350 ???? ? ?? ? ???? 550 ??? ? ? ? ??? ns ??????????????????? ? ????????????????? ? ??????????????????? fall time (i c = 1.0 adc, i b1 = i b2 = 0.1 adc) ????? ? ??? ? ????? t f ???? ? ?? ? ???? e ??? ? ? ? ??? 50 ???? ? ?? ? ???? 75 ??? ? ? ? ??? ns 200 0.04 figure 1. typical dc current gain i c , collector current (amps) 20 0.07 0.1 0.2 0.3 1.0 2.0 4.0 70 50 40 30 80 60 h fe , dc current gain 0.4 0.7 100 v ce = 1.0 vdc t j = 25 c 1.0 v ce , collector-emitter voltage (volts) 10 1.0 0.01 i c , collector current (amps) dc 1.0 m s 2.0 0.1 ms 10 20 100 0.2 5.0 t c 70 c duty cycle 50% figure 2. maximum rated forward bias safe operating area 90 3.0 1.0 ms 10 m s 0.02 0.03 0.05 0.3 0.1 0.5 2.0 3.0 5.0 3.0 7.0 30 50 70
npn http://onsemi.com 3 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector
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