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| 2N3735CSM4 prelim. 6/00 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk medium current npn silicon annular transistors designed for high-speed switching and driver applications in a ceramic surface mount package features ? high voltage ceramic surface mount package screening options available v cb collector ? base voltage v ceo collector ? emitter voltage v ebo emitter ? base voltage i c collector current p d total device dissipation t a = 25 c r q ja thermal resistance junction to ambient t j junction to ambient t stg storage temperature 75v 50v 5v 1a 0.5w 2.9mw/c 200c ?65 to 200c mechanical data dimensions in mm (inches) absolute maximum ratings (t case = 25c unless otherwise stated) lcc3 package underside view pad 1 ? collector pad 2 ? n/c pad 3 ? emitter pad 4 ? base 1 2 3 4 5.59 0.13 (0.22 0.005) 0.23 (0.009) rad. 1.02 0.20 (0.04 0.008) 2.03 0.20 (0.08 0.008) 1.40 0.15 (0.055 0.006) 0.25 0.03 (0.01 0.001) 0.23 (0.009) min. 1.27 0.05 (0.05 0.002) 3.81 0.13 (0.15 0.005) 0.64 0.08 (0.025 0.003)
50 75 5 0.20 20 0.3 35 40 35 20 80 0.2 0.3 0.5 0.9 0.8 1.0 1.2 0.9 1.4 9.0 80 2.5 8 40 30 30 10 2N3735CSM4 prelim. 6/00 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk parameter test conditions min. typ. max. unit i c = 10ma i b = 0 i c = 10 m ai e = 0 i e = 10 m ai c = 0 v ce = 40v v eb = 2 t a = 100 c v ce = 40v v eb = 2 i c = 10ma v ce = 1v i c = 150ma v ce = 1v i c = 500ma v ce = 1v i c = 1a v ce = 1.5v i c = 10ma i b = 1ma i c = 150ma i b = 15ma i c = 500ma i b = 50ma i c = 1a i b = 100ma i c = 10ma i b = 1ma i c = 150ma i b = 15ma i c = 500ma i b = 50ma i c = 1a i b = 100ma v cb = 10v i e = 0 f = 100kh z v be = 0.5v i c = 0 f = 100kh z v ce = 10v i c = 50ma f = 100mh z v cc = 30v v be(off) = 2v i c = 1a i b1 = 100ma v cc = 30v i c = 1a i b1 = - i b2 = 100ma i c = 1a i b = 100ma v cc = 30v off characteristics electrical characteristics (t a = 25 c unless otherwise stated) on characteristics dynamic characteristics v m a ? v v pf ? ns nc bv ceo collector-emitter breakdown voltage 1 bv cbo collector-base breakdown voltage bv ebo emitter-base breakdown voltage i cex collector cutoff current i bl base cutoff current h fe dc current gain 1 v ce(sat) collector- saturation voltage 1 v be(sat) base-emitter saturation voltage 1 c ob output capacitance c ib input capacitance h fe high frequency current gain t d delay time t r rise time t s storage time t f fall time q t total control charge 1) pulse test : pulse width # 300 m s , duty cycle # 2% |
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