savantic semiconductor product specification silicon npn power transistors 2SC3346 description with to-220c package complement to type 2sa1329 high speed switching time : t s tg =1.0 s(typ.) low collector saturation voltage : v ce(sat) =0.4v(max.)@i c =6a applications for high current switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 6 v i c collector current 12 a i b base current 2 a p c collector dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3346 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ; i b =0 80 v v cesat collector-emitter saturation voltage i c =6a; i b =0.3a 0.2 0.4 v v besat base-emitter saturation voltage i c =6a; i b =0.3a 0.9 1.2 v i cbo collector cut-off current v cb =80v ;i e =0 10 a i ebo emitter cut-off current v eb =6v; i c =0 10 a h fe-1 dc current gain i c =1a ; v ce =1v 70 240 h fe-2 dc current gain i c =6a ; v ce =1v 40 f t transition frequency i c =1a ; v ce =5v 80 mhz c ob output capacitance i e =0 ; v cb =10v,f=1mhz 220 pf switching times t on turn-on time 0.2 s t stg storage time 1.0 s t f fall time i b1 =-i b2 =0.3a; r l =5 e ,v cc =30v pw=20s ;duty f 1% 0.2 s h fe-1 classifications o y 70-140 120-240
savantic semiconductor product specification 3 silicon npn power transistors 2SC3346 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC3346
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