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IHW20T120 soft switching series power semiconductors 1 rev. 2 apr-04 low loss duopack : igbt in trench and fieldstop technology with soft, fast recovery anti-parallel emcon he diode ? short circuit withstand time ? 10 s ? designed for : - soft switching applications - induction heating ? trench and fieldstop technology for 1200 v applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in v ce(sat) ? very soft, fast recovery anti-parallel emcon ? he diode ? low emi ? application specific optimisation of inverse diode g c e type v ce i c v ce(sat ),tj=25c t j,max marking package ordering code IHW20T120 1200v 20a 1.7v 150 c h20t120 to-247ac q67040-s4652 maximum ratings parameter symbol value unit collector-emitter voltage v ce 1200 v dc collector current t c = 25 c t c = 100 c i c 40 20 pulsed collector current, t p limited by t jmax i cpuls 60 turn off safe operating area v ce 1200v, t j 150 c - 60 diode forward current t c = 25 c t c = 100 c i f 23 13 diode pulsed current, t p limited by t jmax i fpuls 36 a diode surge non repetitive current, t p limited by t jmax t c = 25 c, t p = 10ms, sine halfwave t c = 25 c, t p 2.5s, sine halfwave t c = 100 c, t p 2.5s, sine halfwave i fsm 50 130 120 a gate-emitter voltage v ge 20 v short circuit withstand time 1) v ge = 15v, v cc 1200v, t j 150 c t sc 10 s power dissipation, t c = 25 c p tot 178 w operating junction temperature t j -40...+150 c storage temperature t stg -55...+150 soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 c 1) allowed number of short circuits: <1000; time between short circuits: >1s.
IHW20T120 soft switching series power semiconductors 2 rev. 2 apr-04 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 0.7 diode thermal resistance, junction ? case r thjcd 1.3 thermal resistance, junction ? ambient r thja to-247ac 40 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =500 a 1200 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =20a t j =25 c t j =125 c t j =150 c - - - 1.7 2.0 2.2 2.2 - - diode forward voltage v f v ge =0v, i f =9a t j =25 c t j =125 c t j =150 c - - - 1.7 1.7 1.7 2.2 - - gate-emitter threshold voltage v ge(th) i c =300 a, v ce = v ge 5.0 5.8 6.5 v zero gate voltage collector current i ces v ce =1200v , v ge =0v t j =25 c t j =150 c - - - - 250 2500 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 600 na transconductance g fs v ce =20v, i c =20a - 13 - s
IHW20T120 soft switching series power semiconductors 3 rev. 2 apr-04 dynamic characteristic input capacitance c iss - 1460 - output capacitance c oss - 78 - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 65 - pf gate charge q gate v cc =960v, i c =20a v ge =15v - 120 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e t o - 2 47 a c - - 13 nh short circuit collector current 1) i c(sc) v ge =15v, t sc 10 s v cc = 600v, t j = 25 c - 120 - a switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 50 - rise time t r - 30 - turn-off delay time t d(off) - 560 - fall time t f - 70 - ns turn-on energy e on - 1.8 - turn-off energy e off - 1.5 - total switching energy e ts t j =25 c, v cc =600v, i c =20a, v ge =-15/15v, r g =28 ? , energy losses include ?tail? and diode reverse recovery. - 3.3 - mj anti-parallel diode characteristic diode reverse recovery time t rr - 140 - ns diode reverse recovery charge q rr - 950 nc diode peak reverse recovery current i rrm t j =25 c, v r =800v, i f =9a, di f /dt =750a/ s - 13.3 a 1) allowed number of short circuits: <1000; time between short circuits: >1s.
IHW20T120 soft switching series power semiconductors 4 rev. 2 apr-04 switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 50 - rise time t r - 32 - turn-off delay time t d(off) - 660 - fall time t f - 130 - ns turn-on energy e on - 2.6 - turn-off energy e off - 2.6 - total switching energy e ts t j =150 c v cc =600v, i c =20a, v ge =-15/15v, r g = 28 ? energy losses include ?tail? and diode reverse recovery. - 5.2 - mj anti-parallel diode characteristic diode reverse recovery time t rr - 210 - ns diode reverse recovery charge q rr - 1600 - nc diode peak reverse recovery current i rrm t j =150 c v r =800v, i f =18a, di f /dt =750a/ s - 16.5 - a
IHW20T120 soft switching series power semiconductors 5 rev. 2 apr-04 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 10a 20a 30a 40a 50a 60a 70a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0,1a 1a 10a dc 10s t p =2s 50s 500s 2ms 200s f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 150 c, d = 0.5, v ce = 600v, v ge = 0/+15v, r g = 28 ? ) figure 2. igbt safe operating area ( d = 0, t c = 25 c, t j 150 c; v ge =15v) p to t , dissipated power 25c 50c 75c 100c 125c 0w 20w 40w 60w 80w 100w 120w 140w 160w 180w i c , collector current 25c 75c 125c 0a 10a 20a 30a 40a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 150 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 150 c) i c i c
IHW20T120 soft switching series power semiconductors 6 rev. 2 apr-04 i c , collector current 0v 1v 2v 3v 4v 5v 6v 0a 10a 20a 30a 40a 50a 60a 15v 7v 9v 11v 13v v ge =17v i c , collector current 0v 1v 2v 3v 4v 5v 6v 0a 10a 20a 30a 40a 50a 60a 15v 7v 9v 11v 13v v ge =17v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristic ( t j = 25c) figure 6. typical output characteristic ( t j = 150c) i c , collector current 0v 2v 4v 6v 8v 10v 12v 0a 10a 20a 30a 40a 50a 60a 25c t j =150c v ce(sat), collector - emitt saturation voltage -50c 0c 50c 100c 0,0v 0,5v 1,0v 1,5v 2,0v 2,5v 3,0v 3,5v i c =20a i c =40a i c =10a i c =5a v ge , gate-emitter voltage t j , junction temperature figure 7. typical transfer characteristic (v ce =20v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v)
IHW20T120 soft switching series power semiconductors 7 rev. 2 apr-04 t, switching times 0a 10a 20a 10ns 100ns 1000ns t r t d(on) t f t d(off) t, switching times 10? 35? 60? 85? 110? 10ns 100ns 1s t f t r t d(off) t d(on) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j =150c, v ce =600v, v ge =0/15v, r g =35 ? , dynamic test circuit in figure e) figure 10. typical switching times as a function of gate resistor (inductive load, t j =150c, v ce =600v, v ge =0/15v, i c =20a, dynamic test circuit in figure e) t, switching times 0c 50c 100c 150 10ns 100ns t r t f t d(on) t d(off) v ge(th ) , gate - emitt trshold voltage -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v 7v min. typ. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce =600v, v ge =0/15v, i c =20a, r g =35 ? , dynamic test circuit in figure e) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.3ma)
IHW20T120 soft switching series power semiconductors 8 rev. 2 apr-04 e , switching energy losses 5a 10a 15a 20a 25a 30a 35a 40 0,0mj 2,0mj 4,0mj 6,0mj 8,0mj e ts * e off *) e on and e ts include losses due to diode recovery e on * e , switching energy losses 5? 30? 55? 80? 0 mj 1 mj 2 mj 3 mj 4 mj 5 mj 6 mj 7 mj e ts * e on * *) e on and e ts include losses due to diode recovery e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j =150c, v ce =600v, v ge =0/15v, r g =35 ? , dynamic test circuit in figure e) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j =150c, v ce =600v, v ge =0/15v, i c =20a, dynamic test circuit in figure e) e , switching energy losses 50c 100c 150c 0mj 1mj 2mj 3mj 4mj 5mj 6mj e ts * e on * *) e on and e ts include losses due to diode recovery e off e , switching energy losses 400v 500v 600v 700v 800v 0mj 1mj 2mj 3mj 4mj 5mj e ts * e on * *) e on and e ts include losses due to diode recovery e off t j , junction temperature v ce , collector - emitter voltage figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce =600v, v ge =0/15v, i c =20a, r g =35 ? , dynamic test circuit in figure e) figure 16. typical switching energy losses as a function of collector emitter voltage (inductive load, t j =150c, v ge =0/15v, i c =20a, r g =35 ? , dynamic test circuit in figure e)
IHW20T120 soft switching series power semiconductors 9 rev. 2 apr-04 v ge , gate - emitter voltage 0nc 50nc 100nc 150n c 0v 5v 10v 15v 960v 240v c, capacitance 0v 10v 20v 10pf 1 00pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c =20 a) figure 18. typical capacitance as a function of collector-emitter voltage ( v ge =0v, f = 1 mhz) t sc , short circuit withstand time 12v 14v 16v 0s 5s 10s 15s i c(sc) , short circuit collector current 12v 14v 16v 18v 0a 25a 50a 75a 100a 125a 150a 175a 200a v ge , gate - emittetr voltage v ge , gate - emittetr voltage figure 19. short circuit withstand time as a function of gate-emitter voltage ( v ce =600v , start at t j = 25c ) figure 20. typical short circuit collector current as a function of gate- emitter voltage ( v ce 600v, t j 150 c)
IHW20T120 soft switching series power semiconductors 10 rev. 2 apr-04 z thjc , transient thermal resistance 10 s100 s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 z thjc , transient thermal resistance 10 s100 s 1ms 10ms 100ms 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 t p , pulse width t p , pulse width figure 23. igbt transient thermal resistance ( d = t p / t ) figure 24. typical diode transient thermal impedance as a function of pulse width ( d = t p / t ) t rr , reverse recovery time 200a/s 400a/s 600a/s 800a/s 0ns 100ns 200ns 300ns 400ns 500ns t j =25c t j =150c q rr , reverse recovery charge 200a/s 400a/s 600a/s 800a/s 0c 1c 2c t j =25c t j =150c di f /dt , diode current slope di f /dt , diode current slope figure 23. typical reverse recovery time as a function of diode current slope ( v r =600v, i f =8a, dynamic test circuit in figure e) figure 24. typical reverse recovery charge as a function of diode current slope ( v r =600v, i f =8a, dynamic test circuit in figure e) r ,(k/w) , (s) 0.2440 5.53*10 -2 0.4622 7.07*10 -3 0.4972 8.85*10 -4 0.0946 8.48*10 -5 c 1 = 1 r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 0.3841 6.54*10 -2 0.2088 3.12*10 -3 0.1079 2.26*10 -4 c 1 = 1 r 1 r 1 r 2 c 2 = r 2
IHW20T120 soft switching series power semiconductors 11 rev. 2 apr-04 i rr , reverse recovery current 200a/s 400a/s 600a/s 800a/s 0a 5a 1 0a 1 5a 2 0a 2 5a t j =25c t j =150c di rr /dt , diode peak rate of fall of reverse recovery current 200a/s 400a/s 600a/s 800a/s -0a/s -100a/s -200a/s -300a/s -400a/s -500a/s -600a/s t j =25c t j =150c di f /dt , diode current slope di f /dt , diode current slope figure 25. typical reverse recovery current as a function of diode current slope ( v r =600v, i f =8a, dynamic test circuit in figure e) figure 26. typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r =600v, i f =8a, dynamic test circuit in figure e) i f , forward current 0v 1v 2v 0a 10a 2 0a 150c t j =25c v f , forward voltage -50c 0c 50c 100c 0,0v 0,5v 1,0v 1,5v 2,0v 8a 5a i f =15a 2,5a v f , forward voltage t j , junction temperature figure 27. typical diode forward current as a function of forward voltage figure 28. typical diode forward voltage as a function of junction temperature
IHW20T120 soft switching series power semiconductors 12 rev. 2 apr-04 dimensions symbol [mm] [inch] min max min max a 4.78 5.28 0.1882 0.2079 b 2.29 2.51 0.0902 0.0988 c 1.78 2.29 0.0701 0.0902 d 1.09 1.32 0.0429 0.0520 e 1.73 2.06 0.0681 0.0811 f 2.67 3.18 0.1051 0.1252 g 0.76 max 0.0299 max h 20.80 21.16 0.8189 0.8331 k 15.65 16.15 0.6161 0.6358 l 5.21 5.72 0.2051 0.2252 m 19.81 20.68 0.7799 0.8142 n 3.560 4.930 0.1402 0.1941 ? p 3.61 0.1421 q 6.12 6.22 0.2409 0.2449 to-247ac
IHW20T120 soft switching series power semiconductors 13 rev. 2 apr-04 figure a. definition of switching times i rrm 90% i rrm 10% i rrm di /dt f t rr i f i, v t q s q f t s t f v r di /dt rr q=q q rr s f + t=t t rr s f + figure c. definition of diodes switching characteristics p(t) 12 n t(t) j 1 1 figure d. thermal equivalent circuit figure b. definition of switching losses
IHW20T120 soft switching series power semiconductors 14 rev. 2 apr-04 published by infineon technologies ag , bereich kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 2001 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon tec hnologies representatives worl dwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or e ffectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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