features: high gain bandwidth product f t = 12 ghz typ @ i c = 10 ma low noise figure 1.6 db typ at 1 ghz 2.0 db typ at 2 ghz high gain |s 21 | 2 = 18.1 db @ 1 ghz 12.8 db @ 2 ghz dice, plastic, hermetic and surface mount packages available performance d ata: electrical characteristics (t a = 25 o c) npn low noise silicon microwave transistor product data sheet bipolarics, inc. part number BRF610 symbol parameters & conditions unit min. typ. max. v ce =8v, i c = 10 ma unless stated v cbo collector-base voltage 9 v v ceo collector-emitter voltage 7 v v ebo emitter-base voltage 1.5 v i c cont collector current 20 ma t j junction temperature 200 o c t stg storage temperature -65 to 150 o c symbol parameters rating units absolute maximum ratings: insertion power gain: f = 1.0 ghz 18.1 f = 2.0 ghz 12.8 nf noise figure: v ce =8v, i c = 2ma f = 1.0 ghz db 1.6 z s = 50 ? c cb collector base capacitance: v cb = 8v f = 1mhz pf 0.11 i cbo collector cutoff current : v cb =8v a 0.2 v ce = 8v, i c = 10 ma f t |s 21 | 2 description and applications: bipolarics' BRF610is a high performance silicon bipolar transistor intended for use in low noise application at vhf, uhf and microwave frequencies. high performance low noise performance can be realized at 2 ma or less making the BRF610an excellent choice for battery applications. from 10 ma to greater than 20ma, f t is nominally 10 ghz. maximum recommended continuous current is 20 ma. a broad range of packages are offered including sot-23, sot-143, plastic and ceramic 0. 0 85 " micro-x, 0.070" stripline and unencapsulated dice. gain bandwidth product ghz 12 p 1d b power output at 1db compression: f = 1.0 ghz dbm 12 g 1d b gain at 1db compression: f = 1.0 ghz dbm 15 h fe forward current transfer ratio: f = 1mhz 50 100 250 i ebo emitter cutoff current : v eb =1v a 1.0
npn low noise silicon microwave transistor page 2 0.02 .51 0.008+0.002 0.203+0.051 0.032+0.015 2.34+0.38 .020+.010 0.51+.25 0.106+0.015 2.67+0.38 0.026+0.001 0.66+0.13 0.085+0.005 2.16+0.13 0.060+0.01 1.52+0.25 1 2 3 4 .020 .51 5 .065 2.15 .008+.002 .20+.050 1 2 3 4 .215+.010 5.46+.25 .020 .51 .60+0.10 1.52+.26 bipolarics, inc. part number BRF610 BRF610 87 package style 87 : 0.0 85 " plastic micro-x, short lead BRF610 85 packagestyle 85 : 0. 0 85 " plastic micro-x package style 04 : 0. 145 " plastic macro-x BRF610 04 BRF610 86 package style 86 : 0.0 85 " plastic micro-x, surface mount
npn low noise silicon microwave transistor page 3 bipolarics, inc. part number BRF610 BRF610 9 2 package style 9 2: to-92 BRF610 14 package style 14 : sot-143 packagestyle 02 j: sot-23j BRF610 02 j BRF610 02 packagestyle 02 : sot-23 0.30 0.51 1.39 1.57 2.25 2.75 0.45 0.60 0.95 2.65 3.04 0.00 0.10 0.45 0.60 0.10 0.79 1.1 1.90
bipolarics, inc. part number BRF610 npn low noise silicon microwave transistor page 4 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances: in .xxx = .005 mm .xx = .13 3. all dimensions nominal; subject to change without notice (mm) BRF610 3 5 package style 3 5: micro-x 0. 0 85 " ceramic bipolarics, inc. 467 6 6 la ke vi ew blv d. fre mo nt, ca 94 53 8 phone: (510)226-6565 fax: (510) 226-6765 lead 1 2 3 4 package style base emitter collector emitter 14 , 85 , 3 5 & 10
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