2MBI75UA-120 1200v / 75a 2 in one-package features high speed switching voltage drive low inductance module structure applications inverter for motor drive ac and dc servo drive amplifier uninterruptible power supply industrial machines, such as welding machines maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specified) item zero gate voltage collector current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage input capacitance turn-on time turn-off time forward on voltage reverse recovery time lead resistance, terminal-chip*3 i ces i ges v ge(th) v ce(sat) (terminal) v ce(sat) (chip) c ies t on t r t r(i) t off t f v f (terminal) v f (chip) t rr r lead ? ? 1.0 ? ? 200 4.5 6.5 8.5 ? 1.9 2.25 ? 2.15 ? ? 1.75 2.10 ? 2.00 ? ?8 ? ? 0.36 1.20 ? 0.21 0.60 ? 0.03 ? ? 0.37 1.00 ? 0.07 0.30 ? 1.75 2.05 ? 1.85 ? ? 1.60 1.90 ? 1.70 ? ? ? 0.35 ? 1.39 ? v ge =0v, v ce =1200v v ce =0v, v ge =20v v ce =20v, i c =75ma v ge =15v, i c =75a v ce =10v, v ge =0v, f=1mhz v cc =600v i c =75a v ge =15v r g =9.1 ? v ge =0v i f =75a i f =75a ma na v v nf s v s m ? electrical characteristics (at tj=25c unless otherwise specified) thermal resistance characteristics thermal resistance contact thermal resistance ? ? 0.31 ? ? 0.48 ? 0.05 ? igbt fwd with thermal compound c/w c/w c/w equivalent circuit schematic * 1 : all terminals should be connected together when isolation test will be done. * 2 : recommendable value : 2.5 to 3.5 nm(m5) symbols conditions characteristics unit min. typ. max. rth(j-c) rth(j-c) rth(c-f)* 4 igbt module u-series * 4 : this is the value which is defined mounting on the additional cooling fin with thermal compound. c1 g1 e1 g2 e2 c2e1 e2 tj=25c tj=125c tj=25c tj=125c tj=25c tj=125c tj=25c tj=125c *3:biggest internal terminal resistance among arm. items symbols conditions characteristics unit min. typ. max. item symbol collector-emitter voltage v ces gate-emitter voltaga v ges collector current i c i c p -i c -i c pulse collector power dissipation p c junction temperature t j storage temperature t stg isolation voltage between terminal and copper base *1 v iso screw torque mounting * 2 terminals * 2 rating 1200 20 100 75 200 150 75 150 400 +150 -40 to +125 2500 3.5 3.5 unit v v a w c vac nm conditions continuous 1ms 1 device ac:1min. tc=25c tc=80c tc=25c tc=80c
2MBI75UA-120 igbt module characteristics (representative) collector-emitter voltage vs. gate-emitter voltage (ty p .) collector current vs. collector-emitter voltage (ty p .) tj= 125c / chip cap acitance vs. collector-emitter voltage (ty p .) dy namic gate charge (ty p .) collector current vs. collector-emitter voltage (ty p .) tj= 25c / chip collector current vs. collector-emitter voltage (ty p .) vge=15v / chip tj=25c / chip vge=0v, f= 1m hz, tj= 25c vcc=600v, ic=75a, tj= 25c 0 50 100 150 200 012345 collector current : ic [a] collect or-emit t er volt age : vce [v] vge =2 0 v 15v 12v 10v 8v 0 50 100 150 200 012345 collector current : ic [a] collector-emitter voltage : vce [v] vge=20v 15v 12v 10v 8v 0 50 100 150 200 012345 collector current : ic [a] collect or-emit t er volt age : vce [v] tj=125c tj=25c 0 2 4 6 8 10 5 10152025 collector - emitter voltage : vce [ v ] gat e - e m it t er v o lt a ge : vge [ v ] ic=150a ic=75a ic= 37.5a 0.1 1.0 10.0 100.0 0102030 capacitance : cies, coes, cres [ nf ] collect or-emit t er volt age : vce [v] cies coes cres 0 100 200 300 400 collector-emitter voltage : vce [ 200v/div ] gate - emitter voltage : vge [ 5v/div ] gate charge : qg [ nc ] 0 vge vce
2MBI75UA-120 igbt module vcc=600v, ic=75a, vge=15v, tj= 125c reverse bias safe operating area (max.) switching time vs. collector current (typ.) vcc=600v, vge=15v, rg=9.1 ? , tj= 25c vcc=600v, ic=75a, vge=15v, tj= 25c switching time vs. collector current (typ.) vcc=600v, vge=15v, rg=9.1 ? , tj=125c switching time vs. gate resistance (typ.) switching loss vs. collector current (typ.) vcc=600v, vge=15v, rg=9.1 ? switching loss vs. gate resistance (typ.) +vge=15v,-vge <= 15v, rg >= 9.1 ? ,tj <= 125c 10 100 1000 10000 050100150 switching time : ton, tr, toff, tf [ nsec ] collector current : ic [ a ] ton toff tr tf 10 100 1000 10000 0 50 100 150 switching time : ton, tr, toff, tf [ nsec ] collector current : ic [ a ] toff ton tr tf 10 100 1000 10000 1.0 10.0 100.0 1000.0 switching time : ton, tr, toff, tf [ nsec ] gate resistance : rg [ ? ] tr tf toff ton 0.0 5.0 10.0 15.0 0 50 100 150 switching loss : eon, eoff, err [ mj/pulse ] collector current : ic [ a ] eon(125c) eon(25c) eoff(125c) err(125c) err(25c) eoff(25c) 0.0 25.0 50.0 75.0 1.0 10.0 100.0 1000.0 switching loss : eon, eoff, err [ mj/pulse ] gate resistance : rg [ ? ] eoff err eon 0 50 100 150 200 0 400 800 1200 collector current : ic [ a ] collector - emitter voltage : vce [ v ]
2MBI75UA-120 igbt module outline drawings, mm m232 transient thermal resistance (max.) reverse recovery characteristics (typ.) vcc=600v, vge=15v, rg=9.1 ? forward current vs. forward on voltage (typ.) chip 0 50 100 150 200 01234 forward current : if [ a ] forward on voltage : vf [ v ] tj=125c tj=25c 10 100 1000 0 50 100 150 reverse recovery current : irr [ a ] reverse recovery time : trr [ nsec ] forward current : if [ a ] trr (125c) trr (25c) irr (125c) irr (25c) 0.001 0.010 0.100 1.000 0.001 0.010 0.100 1.000 thermal resistanse : rth(j-c) [ c/w ] pulse width : pw [ sec ] fwd igbt
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