EPA120E-CP083 updated 02/15/2005 high efficiency heterojunction power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 1 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised february 2005 all dimensions in mil tolerance: 3 mil features ? non-hermetic surface mount 160mil metal ceramic package ? +29 dbm output power at 1db compression ? 19.5 db gain at 2 ghz ? 0.3x1200 micron rece ssed ?mushroom? gate ? si 3 n 4 passivation ? advanced epitaxial doping profile provides high power efficiency, li nearity and reliability electrical characteristics (t a = 25 c) caution! esd sensitive device. symbol parameter/test conditions min typ max units p 1db output power at 1db compression f = 2.0 ghz vds = 8 v, ids=50% idss f = 12.0 ghz 27.5 29.0 29.0 dbm g 1db gain at 1db compression f = 2.0 ghz vds = 8 v, ids=50% idss f = 12.0 ghz 18.0 19.5 7.0 db pae power added efficiency at 1db compression vds = 8 v, ids=50% idss f = 2.0 ghz 43 % i dss saturated drain current v ds = 3 v, v gs = 0 v 210 360 510 ma g m transconductance v ds = 3 v, v gs = 0 v 240 380 ms v p pinch-off voltage v ds = 3 v, i ds = 3.5 ma -1.0 -2.5 v bv gd drain breakdown voltage i gd = 1.2 ma -13 -15 v bv gs source breakdown voltage i gs = 1.2 ma -7 -14 v r th * thermal resistance 40 o c/w notes: * overall rth depends on case mounting. absolute maximum ratings for continuous operation 1,2 symbol characteristic value v ds drain to source voltage 8 v v gs gate to source voltage -3 v i ds drain current 405 ma i gsf forward gate current 10 ma p in input power @ 3db compression p t total power dissipation 3.8 w t ch channel temperature 150c t stg storage temperature -65/+150c note: 1. exceeding any of the above ra tings may result in permanent damage. 2. exceeding any of the above ratings may reduce mttf below design goals.
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