photodiode si pin photodiode 3 mm lens plastic package s7797 , S5052 , s8255 , s5573 features l clear plastic package with 3 mm lens l high-speed response s7797: 500 mhz typ. (v r =2.5 v) S5052: 500 mhz typ. (v r =5 v) s8255: 200 mhz typ. (v r =5 v) s5573: 80 mhz typ. (v r =5 v) applications l laser diode monitor in optical disk drive (high-speed apc) l spatial light transmission these si pin photodiodes are molded into to a clear plastic package with a 3 mm lens. to meet your application, various types are available with different time response characteristics.
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si pin photodiode s7797, S5052, s8255, s5573 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 1 hamamatsu photonics k.k. cat. no. kpin1047e01 apr. 2001 dn chip position accuracy with respect to the package dimension marked * x, y ?.2 ? ? 6? 8? 4.2 max. (including burr) 3.8 * 3.0 5.2 max. (including burr) 1.9 2.9 ( 1.3 ) (0.8) 4.8 * 9.2 ?1.0 1.2 0.45 2.54 0.45 8? 6? 0.7 2.2 ?0.15 4.0 ?0.2 r1.5 lens center 0 0.1 0.2 0.3 0.4 0.7 200 400 600 800 1000 wavelength (nm) photo sensitivity (a/w) (typ. ta = 25 ? c ) 0.5 0.6 S5052 s7797 s5573, s8255 spectral response dark current vs. reverse voltage kpinb0176ea 100 fa 1 pa 10 pa 100 pa 0.01 0.1 1 10 100 reverse voltage (v) dark current (typ. t a =25 ? c) s5573 S5052 s8255 s7797 kpinb0177ea 1 pa 10 pa 100 pa 1 na 10 na -20 0 20 40 60 ambient temperature ( ? c) dark current (typ.) 80 100 na s5573 (v r =5 v) S5052 (v r =5 v) s8255 (v r =5 v) s7797 (v r =2.5 v) dark current vs. ambient temperature terminal capacitance vs. reverse voltage 1 pf 10 pf 0.1 1 10 100 reverse voltage (v) terminal capacitance s8255 s5573 S5052 s7797 (typ. ta=25 ? c, f=1 mhz) 90 ? 80 ? 70 ? 60 ? 50 ? 30 ? relative sensitivity 40 ? 20 ? 10 ? 0 ? 10 ? 20 ? 90 ? 80 ? 70 ? 60 ? 50 ? 30 ? 40 ? 80 % 20 % 40 % 60 % (typ. ta=25 ? c) 100 % s5573 s8255 S5052 s7797 directivity kpinb0178ea kpinb0179ea kpinb0180ea kpina0032ea dimensional outline (unit: mm, tolerance unless otherwise noted: 0.1)
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