1 edition 1.1 august 2004 FLM1314-8F x, ku-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 45.5 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 32.0 and -4.4 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency 3rd order intermodulation distortion output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 3900 5900 - 3900 - -0.5 -1.5 -3.0 -5.0 - - 5.0 6.0 - -28- 38.5 39.0 - v ds = 5v, i ds = 196ma v ds = 5v, i ds = 2400ma v ds = 5v, v gs = 0v i gs = -196 a v ds =10v, i ds = 0.65 i dss (typ.), f = 13.75 ~ 14.5 ghz, z s =z l =50 ohm f = 14.5ghz, ? f = 10 mhz 2-tone test p out = 28.0dbm s.c.l. ma ms v db % -42 -45 - dbc dbm v g m v p v gso p 1db g 1db drain current - 2400 3000 ma i dsr im 3 add gain flatness -- 0.6 db ? g test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) channel to case thermal resistance - 2.8 3.3 c/w r th g.c.p.: gain compression point, s.c.l.: single carrier level case style: ia 10v x i dsr x r th channel temperature rise - - 80 c ? t ch description the FLM1314-8F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. features ?high output power: p 1db = 39.0dbm (typ.) ?high gain: g 1db = 6.0db (typ.) ?high pae: add = 28% (typ.) ?low im 3 = -45dbc@po = 28.0dbm ?broad band: 13.75 ~ 14.5ghz ?impedance matched zin/zout = 50 ?
2 FLM1314-8F x, ku-band internally matched fet power derating curve 50 0 100 150 200 case temperature ( c) 40 50 30 20 10 total power dissipation (w) output power & im 3 vs. input power v ds = 10v f1 = 14.5 ghz f2 = 14.51 ghz 2-tone test 18 22 20 26 24 28 input power (s.c.l.) (dbm) s.c.l.: single carrier level output power (s.c.l.) (dbc) -30 -20 -40 -50 28 26 24 30 32 22 im 3 (dbc) im 3 p out 13.75 14.00 14.25 14.50 36 34 38 40 frequency (ghz) output power (dbm) output power vs. frequency v ds = 10v p 1db pin = 35dbm 31dbm 29dbm 27dbm 24 26 28 30 32 34 36 34 30 32 36 38 40 30 20 10 input power (dbm) output power (dbm) add (%) add pout output power vs. input power v ds = 10v f = 14.125 ghz
3 FLM1314-8F x, ku-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 21 | scale for |s 12 | 0.1 0.2 10 1 2 3 4 14.5 14.5 14.3 14.3 14.1 14.1 13.7 13.9 13.9 13.7 14.7 14.7 13.55 ghz 13.55 ghz 14.5 13.7 13.9 13.9 14.3 14.3 14.5 13.7 14.7 14.7 14.1 14.1 13.55 ghz 13.55 ghz s-parameters v ds = 10v, i ds = 2400ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 13550 .514 64.8 2.077 154.3 .075 143.1 .350 4.6 13600 .493 59.1 2.103 148.7 .079 137.6 .337 -2.7 13650 .470 53.7 2.133 143.3 .083 131.6 .330 -11.2 13700 .443 48.0 2.171 137.5 .085 125.0 .323 -19.0 13750 .418 41.5 2.191 131.9 .088 121.5 .314 -27.5 13800 .393 35.1 2.211 126.4 .091 114.0 .306 -36.2 13850 .367 29.6 2.237 120.7 .093 110.2 .301 -44.3 13900 .339 22.7 2.261 115.1 .095 104.0 .296 -52.8 13950 .313 15.0 2.274 109.3 .093 99.3 .294 -61.3 14000 .290 7.7 2.292 103.6 .099 93.5 .292 -69.1 14050 .260 -0.2 2.302 97.9 .098 87.7 .286 -78.1 14100 .232 -9.4 2.304 92.1 .101 83.2 .284 -86.2 14150 .206 -19.3 2.308 86.2 .102 76.4 .282 -94.9 14200 .184 -31.9 2.307 80.3 .103 69.4 .281 -103.8 14250 .160 -45.5 2.301 74.6 .104 64.4 .284 -112.6 14300 .148 -62.2 2.297 68.5 .103 59.7 .285 -120.6 14350 .138 -81.2 2.281 62.8 .106 53.5 .285 -128.9 14400 .139 -98.7 2.254 57.0 .103 48.6 .285 -137.1 14450 .146 -117.3 2.225 51.4 .104 41.5 .288 -144.6 14500 .165 -133.8 2.197 45.7 .105 36.1 .289 -151.9 14550 .186 -146.0 2.163 39.9 .105 31.0 .286 -160.0 14600 .213 -156.8 2.128 34.5 .103 25.8 .287 -166.3 14650 .236 -165.0 2.083 28.9 .100 21.7 .292 -172.7 14700 .262 -172.3 2.042 23.6 .102 15.4 .293 -179.0
4 FLM1314-8F x, ku-band internally matched fet 2-r 1.25 0.15 (0.049) 0.5 (0.020) 8.1 (0.319) 13.0 0.15 (0.512) 16.5 0.15 (0.650) 3.2 max. (0.126) 1.8 0.15 (0.071) 0.1 (0.004) 9.7 0.15 (0.382) 1.5 min. (0.059) 1.5 min. (0.059) 1.15 (0.045) 0.2 max. (0.008) case style "ia" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 4. source (flange) 1 2 3 4 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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