2008. 1. 4 1/7 semiconductor technical data kmb060n60pa/fa n channel mos field effect transistor revision no : 4 general description it s mainly suitable for low viltage applications such as automotive, dc/dc converters and a load switch in battery powered applications features v dss = 60v, i d = 60a drain-source on resistance : r ds(on) =14m (max.) @v gs = 10v mosfet maximum rating (ta=25 unless otherwise noted) dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 12 3 g d s note1) pulse test : pulse width 10 s duty cycle 1% *drain current iimited by maximum junction temperature characteristic symbol rating unit kmb060n60pa kmb060n60fa thermal resistance, junction-to-ambient r thja 62.5 /w thermal resistance, junction-to-case r thjc 1.0 2.9 /w thermal characteristics equivalent circuit ci gd si xud6b i 5mu( m)sse65 qcu d d ( ( x x g g ciod vd ciod vd v b bb m m u u cs v x6v v66vu5 ceicw eis cimd eis sio eis eim eic icm eic ei eic is eic cie ei sio eis oid eis wiwm eis sidw eis i eic csid eis (dud(u656( 5vm ud6bg b6 vewebwed vewebwed xlfhk)5lnlpt 2lgpfct 2 x55 we 2 gfpt)5lnlpt 2lgpfct 2 g55 s 2 xlfhk (nlltkp x( 6 x we we d ngat= qblpt cu 6 x soe soe d xlfhk)5lnlpt xhl=t llsfl= (nlltkp 6 5 we d xlfhk lstl xhaahifphlk x s ce c vfyh/n/ nkpphlk t/itlfpnlt ) cd 5pllfct t/itlfpnlt ufkct apc ) cd vewebwed vewebwed
2008. 1. 4 2/7 kmb060n60pa/fa revision no : 4 mosfet electrical characteristics (ta=25 unless otherwise noted) note 1) pulse test : pulse width 10 s, duty cycle 1%. note 2) essentially independent of operating temperature. characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 60 - - v drain cut-off current i dss v ds =60v, v gs =0v, - - 1 a gate leakage current i gss v gs = 15v, v ds =0v - - 100 na gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v drain-source on resistance r ds(on) v gs =10v, i d =30a - 11.5 14 forward transconductance g fs v ds =15v, i d =30a - 20 - dynamic input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 2000 - pf output capacitance c oss - 360 - reverse transfer capacitance c rss - 125 - total gate charge q g v ds = 48v, v gs = 4.5v, i d =30a (note1,2) - 70 - nc gate-source charge q gs - 15 - gate-drain charge q gd - 20 - turn-on delay time t d(on) v dd = 30v, i d =30a, r g = 25 - 35 - ns turn-on rise time t r - 220 - turn-off delay time t d(off) - 55 - turn-off fall time t f - 30 - diode electrical characteristics (ta=25 unless otherwise noted) characteristic symbol test condition min. typ. max. unit diode forward voltage v sd i sd =60a, v gs =0v - - 1.5 v reverse recovery time t rr v gs =0v, i s =60a, dif/dt=100a/ s - 110 - 701 a 2 kmb 060n60p 1 2 product name lot no 1 713 a 2 kmb 060n60f 1 marking
2008. 1. 4 3/7 kmb060n60pa/fa revision no : 4 fig 1. i d - v ds drain - source voltage v ds (v) 0246810 0 40 80 120 150 180 drain current i d (a) fig 3. i d - v gs gate - source voltage v gs (v) drain current i d (a) 4.5v 4v 3.5v 3v 2.5v v gs =5v fig 2. r ds(on) - i d drain current i d (a) 0 1020304050 0 5 10 15 20 25 drain source on resistance r ds(on) ( ? ) common source tc=25 c pulse test common source tc=25 c pulse test v gs =10v 0246810 0 40 80 120 160 200 v gs =15v fig 4. r ds(on) - t j 0 50 -50 100 150 normalized on resistance 0.2 0.6 2.2 1.0 1.4 1.8 junction temperature t j ( ) c v gs = 10v i ds = 30a fig 5. v th - t j 0 50 -50 100 150 normalized on resistance 0.6 0.4 0.8 1 1.2 1.4 junction temperature t j ( ) c v ds = v gs i d = 250 a fig 6. i dr - v dsf 0.2 0.4 0.8 0.6 1.2 1.0 1.4 reverse drain current i s (a) source - drain voltage v sd (v) 10 0 10 1 10 -1 v gs = 0 250 s pulse test 150 c 25 c
2008. 1. 4 4/7 kmb060n60pa/fa revision no : 4 drain current i d (a) gate - charge q g (nc) fig 8. c - v ds drain - source voltage v ds (v) drain - source voltage v ds (v) 0 10 6 2 4 8 80 40 60 100 20 0 fig 7. q g - v ds fig 9. safe operation area fig 10. safe operation area gate - source voltage v gs (v) drain - source voltage v ds (v) gate - source voltage v gs (v) 0 1000 2000 3000 4000 5000 0 1020304050 f = 1mhz v gs = 0v c rss c oss c iss drain current i d (a) 1 10 100 0.01 0.1 1 10 100 0.1 kmb060n60pa kmb060n60fa 1ms 10ms 100 s dc 1 10 100 0.01 0.1 1 10 100 0.1 1ms 10ms 100 s dc r ds(on ) limited r ds ( on) limited
2008. 1. 4 5/7 kmb060n60pa/fa revision no : 4 square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 0.003 0.01 0.1 1 fig 11. r th of kmb060n60pa transient thermal impedance [ / w] c fig 12. r th of kmb060n60fa transient thermal impedance [ / w] c - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 0.003 0.01 0.1 1 - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm single pulse duty=0.5 0.2 0.1 0.05 0.02 0.01 sing le pulse duty=0.5 0.2 0.1 0.05 0.02 0.01
2008. 1. 4 6/7 kmb060n60pa/fa revision no : 4 0.5 x v dss t p - single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss - gate charge i d i d v ds v gs v gs v ds 1.0 ma 0.8 x v dss 0.5 x v dss schottky diode 10v -4.5v 25 ? r l q g q gd q gs q - resistive load switching v gs v ds v gs t r t d(off) t off t d(on) t on t f 10% 90%
2008. 1. 4 7/7 kmb060n60pa/fa revision no : 4 - source - drain diode reverse recovery and dv /dt i f i s v ds v sd 0.8 x v dss i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm
|
