plastic npn silicon medium-power transistor . . . useful for medium voltage applications requiring high f t such as converters and extended range amplifiers. ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ???? ???? symbol ??????? ??????? mje344 ??? ??? unit ???????????? ???????????? collectoremitter voltage ???? ???? v ceo ??????? ??????? 200 ??? ??? vdc ???????????? ???????????? collectorbase voltage ???? ???? v cb ??????? ??????? 200 ??? ??? vdc ???????????? ???????????? emitterbase voltage ???? ???? v eb ??????? ??????? 5.0 ??? ??? vdc ???????????? ???????????? collector current e continuous ???? ???? i c ??????? ??????? 500 ??? ??? madc ???????????? ???????????? base current ???? ???? i b ??????? ??????? 250 ??? ??? madc ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ??????? ? ????? ? ??????? 20 0.16 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ??????? ? ????? ? ??????? 65 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ???? ???? symbol ??????? ??????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ???? ???? q jc ??????? ??????? 6.25 ??? ??? c/w i c , collector current (amp) 1.0 10 v ce , collector-emitter voltage (volts) 0.01 0.5 0.1 0.05 0.02 second breakdown limit bonding wire limit thermal limit t c = 25 c 20 40 60 100 300 t j = 150 c 1.0ms dc 0.2 30 200 figure 1. active region safe operating area 500 m s all all there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation then the curves indicate. the data of figure 1 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. at high case temperatures, thermal limitations will reduce the power that can be handled to values less then the limitations imposed by second breakdown. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 1 1 publication order number: mje344/d mje344 0.5 ampere power transistor npn silicon 150200 volts 20 watts case 7709 to225aa type 3 2 1 style 1: pin 1. emitter 2. collector 3. base
mje344 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (i c = 1.0 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 200 ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? collector cutoff current (v ce = 200 vdc, i b = 0) ????? ????? i ceo ??? ??? e ???? ???? 1.0 ??? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 200 vdc, i e = 0) ????? ? ??? ? ????? i cbo ??? ? ? ? ??? e ???? ? ?? ? ???? 0.1 ??? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter cutoff current (v eb = 5.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? e ???? ? ?? ? ???? 0.1 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ?????????????????????? dc current gain (i c = 50 madc, v ce = 10 vdc) ????? ????? h fe ??? ??? 30 ???? ???? 300 ??? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 50 madc, i b = 5.0 madc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? e ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (i c = 50 madc, v ce = 10 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? currentgain e bandwidth product (i c = 50 madc, v ce = 25 vdc, f = 10 mhz) ????? ????? f t ??? ??? 15 ???? ???? e ??? ??? mhz ?????????????????????? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 20 vdc, i e = 0, f = 100 khz) ????? ? ??? ? ????? c ob ??? ? ? ? ??? e ???? ? ?? ? ???? 15 ??? ? ? ? ??? pf ?????????????????????? ? ???????????????????? ? ?????????????????????? smallsignal current gain (i c = 50 madc, v ce = 10 vdc, f = 1.0 khz) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 25 ???? ? ?? ? ???? e ??? ? ? ? ??? e 300 2.0 i c , collector current (ma) 10 5.0 70 300 500 50 30 figure 2. dc current gain 10 i c , collector current (ma) 0.6 50 0.8 200 h fe , current gain 100 300 500 1.0 t j = +25 c t j = +150 c +100 c 70 20 200 100 20 3.0 7.0 50 1.0 100 20 30 200 0 0.2 0.4 figure 3. aono voltages +25 c -55 c v ce = 2.0 v v ce = 10 v 10 voltage (volts) i c /i b = 5.0 v be(sat) @ i c /i b = 10 v be @ v ce = 10 v v ce(sat) @ i c /i b = 10
mje344 http://onsemi.com 3 package dimensions case 7709 issue w to225aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b a m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 --- style 1: pin 1. emitter 2. collector 3. base
mje344 http://onsemi.com 4 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mje344/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
|
